Highly polarized photoluminescence and its dynamics in semipolar (20 2 ̄ 1 ̄) InGaN/GaN quantum well

S. Marcinkevičius, R. Ivanov, Yuji Zhao, S. Nakamura, S. P. Denbaars, J. S. Speck

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

Very high polarization degree of 0.98, considerably larger than theoretical predictions, has been measured in (202̄1̄) In0.24Ga 0.76N/GaN quantum well by low temperature photoluminescence. With increasing temperature, the polarization degree decreases due to thermal population of the excited valence band level. This effect suggests an accurate method to determine the interlevel energy, which, for the studied well, is 32 meV. Time-resolved photoluminescence measurements set radiative recombination times between 2 and 12 ns for temperatures from 3 to 300 K. Nonradiative recombination was found to be slow, over 2 ns at 300 K, taking place via traps with activation energy of 0.19 eV.

Original languageEnglish (US)
Article number111113
JournalApplied Physics Letters
Volume104
Issue number11
DOIs
StatePublished - Mar 17 2014
Externally publishedYes

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quantum wells
photoluminescence
radiative recombination
polarization
traps
activation energy
valence
temperature
predictions
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Highly polarized photoluminescence and its dynamics in semipolar (20 2 ̄ 1 ̄) InGaN/GaN quantum well. / Marcinkevičius, S.; Ivanov, R.; Zhao, Yuji; Nakamura, S.; Denbaars, S. P.; Speck, J. S.

In: Applied Physics Letters, Vol. 104, No. 11, 111113, 17.03.2014.

Research output: Contribution to journalArticle

Marcinkevičius, S. ; Ivanov, R. ; Zhao, Yuji ; Nakamura, S. ; Denbaars, S. P. ; Speck, J. S. / Highly polarized photoluminescence and its dynamics in semipolar (20 2 ̄ 1 ̄) InGaN/GaN quantum well. In: Applied Physics Letters. 2014 ; Vol. 104, No. 11.
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