Highly polarized photoluminescence and its dynamics in semipolar (20 2 ̄ 1 ̄) InGaN/GaN quantum well

S. Marcinkevičius; R. Ivanov; Y. Zhao; S. Nakamura; S. P. Denbaars; J. S. Speck

doi:10.1063/1.4869459

Highly polarized photoluminescence and its dynamics in semipolar (20 2 ̄ 1 ̄) InGaN/GaN quantum well

S. Marcinkevičius, R. Ivanov, Y. Zhao, S. Nakamura, S. P. Denbaars, J. S. Speck

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

Very high polarization degree of 0.98, considerably larger than theoretical predictions, has been measured in (202̄1̄) In_0.24Ga _0.76N/GaN quantum well by low temperature photoluminescence. With increasing temperature, the polarization degree decreases due to thermal population of the excited valence band level. This effect suggests an accurate method to determine the interlevel energy, which, for the studied well, is 32 meV. Time-resolved photoluminescence measurements set radiative recombination times between 2 and 12 ns for temperatures from 3 to 300 K. Nonradiative recombination was found to be slow, over 2 ns at 300 K, taking place via traps with activation energy of 0.19 eV.

Original language	English (US)
Article number	111113
Journal	Applied Physics Letters
Volume	104
Issue number	11
DOIs	https://doi.org/10.1063/1.4869459
State	Published - Mar 17 2014
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Highly polarized photoluminescence and its dynamics in semipolar (20 2{\= } 1{\= }) InGaN/GaN quantum well",

abstract = "Very high polarization degree of 0.98, considerably larger than theoretical predictions, has been measured in (20{\=2}{\=1}) In0.24Ga 0.76N/GaN quantum well by low temperature photoluminescence. With increasing temperature, the polarization degree decreases due to thermal population of the excited valence band level. This effect suggests an accurate method to determine the interlevel energy, which, for the studied well, is 32 meV. Time-resolved photoluminescence measurements set radiative recombination times between 2 and 12 ns for temperatures from 3 to 300 K. Nonradiative recombination was found to be slow, over 2 ns at 300 K, taking place via traps with activation energy of 0.19 eV.",

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AU - Marcinkevičius, S.

AU - Ivanov, R.

AU - Zhao, Y.

AU - Nakamura, S.

AU - Denbaars, S. P.

AU - Speck, J. S.

PY - 2014/3/17

Y1 - 2014/3/17

N2 - Very high polarization degree of 0.98, considerably larger than theoretical predictions, has been measured in (202̄1̄) In0.24Ga 0.76N/GaN quantum well by low temperature photoluminescence. With increasing temperature, the polarization degree decreases due to thermal population of the excited valence band level. This effect suggests an accurate method to determine the interlevel energy, which, for the studied well, is 32 meV. Time-resolved photoluminescence measurements set radiative recombination times between 2 and 12 ns for temperatures from 3 to 300 K. Nonradiative recombination was found to be slow, over 2 ns at 300 K, taking place via traps with activation energy of 0.19 eV.

AB - Very high polarization degree of 0.98, considerably larger than theoretical predictions, has been measured in (202̄1̄) In0.24Ga 0.76N/GaN quantum well by low temperature photoluminescence. With increasing temperature, the polarization degree decreases due to thermal population of the excited valence band level. This effect suggests an accurate method to determine the interlevel energy, which, for the studied well, is 32 meV. Time-resolved photoluminescence measurements set radiative recombination times between 2 and 12 ns for temperatures from 3 to 300 K. Nonradiative recombination was found to be slow, over 2 ns at 300 K, taking place via traps with activation energy of 0.19 eV.

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Highly polarized photoluminescence and its dynamics in semipolar (20 2 ̄ 1 ̄) InGaN/GaN quantum well

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