@inproceedings{4979ff86079647179ea3523e55627b9c,
title = "Highly oriented diamond films on Si: growth, characterization, and devices",
abstract = "Highly oriented, (100) textured diamond films have been grown on single-crystal Si substrates via microwave plasma enhanced chemical vapor deposition. A multistep deposition process including bias-enhanced nucleation and textured growth was used to obtain smooth films consisting of epitaxial grains with only low-angle grain boundaries. Boron-doped layers were selectively deposited onto the surface of these oriented films and temperature-dependent Hall effect measurements indicated a 3 to 5 times improvement in hole mobility over polycrystalline films grown under similar conditions. Room temperature hole mobilities between 135 and 278 cm2/V-s were measured for the highly oriented samples as compared to 2 to 50 cm2/V-s for typical polycrystalline films. Grain size effects and a comparison between the transport properties of polycrystalline, highly oriented and homoepitaxial films will be discussed. Metal-oxide- semiconductor field-effect transistors were then fabricated on the highly oriented films and exhibited saturation and pinch-off of the channel current.",
author = "Stoner, {Brian R.} and Malta, {D. M.} and Tessmer, {A. J.} and J. Holmes and Dreifus, {David L.} and Glass, {R. C.} and A. Sowers and Nemanich, {Robert J.}",
year = "1994",
language = "English (US)",
isbn = "0819414468",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
pages = "2--13",
editor = "Tamor, {Mike A.} and Mohammad Aslam",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
note = "Diamond-Film Semiconductors ; Conference date: 27-01-1994 Through 28-01-1994",
}