Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation

A. M. Fischer, Y. O. Wei, Fernando Ponce, M. Moseley, B. Gunning, W. A. Doolittle

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

We have studied the properties of thick InxGa1-xN films, with indium content ranging from x ∼ 0.22 to 0.67, grown by metal-modulated epitaxy. While the low indium-content films exhibit high density of stacking faults and dislocations, a significant improvement in the crystalline quality and optical properties has been observed starting at x ∼ 0.6. Surprisingly, the InxGa1-xN film with x ∼ 0.67 exhibits high luminescence intensity, low defect density, and uniform full lattice-mismatch strain relaxation. The efficient strain relaxation is shown to be due to a critical thickness close to the monolayer range. These films were grown at low temperatures (∼400 °C) to facilitate indium incorporation and with precursor modulation to enhance surface morphology and metal adlayer diffusion. These findings should contribute to the development of growth techniques for nitride semiconductors under high lattice misfit conditions.

Original languageEnglish (US)
Article number131101
JournalApplied Physics Letters
Volume103
Issue number13
DOIs
StatePublished - Sep 23 2013

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indium
crystal defects
metals
epitaxy
nitrides
luminescence
modulation
optical properties
defects

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation. / Fischer, A. M.; Wei, Y. O.; Ponce, Fernando; Moseley, M.; Gunning, B.; Doolittle, W. A.

In: Applied Physics Letters, Vol. 103, No. 13, 131101, 23.09.2013.

Research output: Contribution to journalArticle

Fischer, A. M. ; Wei, Y. O. ; Ponce, Fernando ; Moseley, M. ; Gunning, B. ; Doolittle, W. A. / Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation. In: Applied Physics Letters. 2013 ; Vol. 103, No. 13.
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