Abstract
Herein we present a systematic study on the effects of different gas molecules on the photoelectric response of few-layer GaSe phototransistors before and after introducing defects. After introducing defects by thermal annealing, the phototransistors become largely photo-responsive (18.75 A W-1) with high external quantum efficiency (EQE) (∼91.53%), high photocurrent on-off ratio, fast photo-response, and good stability in an O2 rich environment when illuminated by 254 nm ultraviolet light.
Original language | English (US) |
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Pages (from-to) | 248-253 |
Number of pages | 6 |
Journal | Journal of Materials Chemistry C |
Volume | 4 |
Issue number | 2 |
DOIs | |
State | Published - 2016 |
ASJC Scopus subject areas
- General Chemistry
- Materials Chemistry