Highly crystalline synthesis of tellurene sheets on two-dimensional surfaces: Control over helical chain direction of tellurene

Sijie Yang, Bin Chen, Ying Qin, Yi Zhou, Lei Liu, Michael Durso, Houlong Zhuang, Yuxia Shen, Sefaattin Tongay

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Recent results have identified two-dimensional (2D) tellurene as a potential van der Waals (vdW) material for thermoelectric and optoelectronics applications owing to their pseudo-one-dimensional (anisotropic) behavior and structure. While hydrothermal synthesis is suitable for yielding potentially crystalline materials, it is well known for its incompatibility with manufacturing and scaling. There is an urgent need for synthesis of tellurene sheets in vdW layered form with the desired crystallinity as well as controlled crystalline anisotropy using more conventional and scalable processes. Here, we report on the synthesis of tellurene sheets onto a variety of surfaces of vdW-bonded 2D layered crystals in their trigonal layered form with controlled tellurene chain (anisotropy) direction using horizontal physical vapor deposition method. Our systematic tellurene growth studies on six different vdW surfaces show that GaS and GaSe surfaces enable highly crystalline and self-oriented tellurene sheets. Detailed cross-sectional transmission electron microscopy (TEM), angle-resolved Raman spectroscopy, scanning electron microscopy, and energy-dispersive spectroscopy measurements provide fundamental insights into the growth dynamics and characteristics of tellurene. First-principles calculations and cross-sectional TEM measurements suggest that tellurene chains are well-oriented along the GaSe armchair lattice direction owing to the much-reduced total energy of the system and a stronger degree of coupling across adjacent layers. Synthesized tellurene sheets exhibit remarkable structural anisotropy, as evidenced by angle-resolved Raman measurements, and the overall results open a clear pathway for layer-by-layer growth of tellurene sheets with controlled crystalline anisotropy using conventional synthesis techniques.

Original languageEnglish (US)
Article number104002
JournalPhysical Review Materials
Volume2
Issue number10
DOIs
StatePublished - Oct 11 2018

Fingerprint

control surfaces
Control surfaces
Anisotropy
Crystalline materials
synthesis
anisotropy
Transmission electron microscopy
Hydrothermal synthesis
Physical vapor deposition
transmission electron microscopy
incompatibility
Optoelectronic devices
Raman spectroscopy
Energy dispersive spectroscopy
crystallinity
manufacturing
Crystals
Scanning electron microscopy
Direction compound
vapor deposition

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Highly crystalline synthesis of tellurene sheets on two-dimensional surfaces : Control over helical chain direction of tellurene. / Yang, Sijie; Chen, Bin; Qin, Ying; Zhou, Yi; Liu, Lei; Durso, Michael; Zhuang, Houlong; Shen, Yuxia; Tongay, Sefaattin.

In: Physical Review Materials, Vol. 2, No. 10, 104002, 11.10.2018.

Research output: Contribution to journalArticle

@article{03b1378240bc4b12aceb7a80364c2cfa,
title = "Highly crystalline synthesis of tellurene sheets on two-dimensional surfaces: Control over helical chain direction of tellurene",
abstract = "Recent results have identified two-dimensional (2D) tellurene as a potential van der Waals (vdW) material for thermoelectric and optoelectronics applications owing to their pseudo-one-dimensional (anisotropic) behavior and structure. While hydrothermal synthesis is suitable for yielding potentially crystalline materials, it is well known for its incompatibility with manufacturing and scaling. There is an urgent need for synthesis of tellurene sheets in vdW layered form with the desired crystallinity as well as controlled crystalline anisotropy using more conventional and scalable processes. Here, we report on the synthesis of tellurene sheets onto a variety of surfaces of vdW-bonded 2D layered crystals in their trigonal layered form with controlled tellurene chain (anisotropy) direction using horizontal physical vapor deposition method. Our systematic tellurene growth studies on six different vdW surfaces show that GaS and GaSe surfaces enable highly crystalline and self-oriented tellurene sheets. Detailed cross-sectional transmission electron microscopy (TEM), angle-resolved Raman spectroscopy, scanning electron microscopy, and energy-dispersive spectroscopy measurements provide fundamental insights into the growth dynamics and characteristics of tellurene. First-principles calculations and cross-sectional TEM measurements suggest that tellurene chains are well-oriented along the GaSe armchair lattice direction owing to the much-reduced total energy of the system and a stronger degree of coupling across adjacent layers. Synthesized tellurene sheets exhibit remarkable structural anisotropy, as evidenced by angle-resolved Raman measurements, and the overall results open a clear pathway for layer-by-layer growth of tellurene sheets with controlled crystalline anisotropy using conventional synthesis techniques.",
author = "Sijie Yang and Bin Chen and Ying Qin and Yi Zhou and Lei Liu and Michael Durso and Houlong Zhuang and Yuxia Shen and Sefaattin Tongay",
year = "2018",
month = "10",
day = "11",
doi = "10.1103/PhysRevMaterials.2.104002",
language = "English (US)",
volume = "2",
journal = "Physical Review Materials",
issn = "2475-9953",
publisher = "American Physical Society",
number = "10",

}

TY - JOUR

T1 - Highly crystalline synthesis of tellurene sheets on two-dimensional surfaces

T2 - Control over helical chain direction of tellurene

AU - Yang, Sijie

AU - Chen, Bin

AU - Qin, Ying

AU - Zhou, Yi

AU - Liu, Lei

AU - Durso, Michael

AU - Zhuang, Houlong

AU - Shen, Yuxia

AU - Tongay, Sefaattin

PY - 2018/10/11

Y1 - 2018/10/11

N2 - Recent results have identified two-dimensional (2D) tellurene as a potential van der Waals (vdW) material for thermoelectric and optoelectronics applications owing to their pseudo-one-dimensional (anisotropic) behavior and structure. While hydrothermal synthesis is suitable for yielding potentially crystalline materials, it is well known for its incompatibility with manufacturing and scaling. There is an urgent need for synthesis of tellurene sheets in vdW layered form with the desired crystallinity as well as controlled crystalline anisotropy using more conventional and scalable processes. Here, we report on the synthesis of tellurene sheets onto a variety of surfaces of vdW-bonded 2D layered crystals in their trigonal layered form with controlled tellurene chain (anisotropy) direction using horizontal physical vapor deposition method. Our systematic tellurene growth studies on six different vdW surfaces show that GaS and GaSe surfaces enable highly crystalline and self-oriented tellurene sheets. Detailed cross-sectional transmission electron microscopy (TEM), angle-resolved Raman spectroscopy, scanning electron microscopy, and energy-dispersive spectroscopy measurements provide fundamental insights into the growth dynamics and characteristics of tellurene. First-principles calculations and cross-sectional TEM measurements suggest that tellurene chains are well-oriented along the GaSe armchair lattice direction owing to the much-reduced total energy of the system and a stronger degree of coupling across adjacent layers. Synthesized tellurene sheets exhibit remarkable structural anisotropy, as evidenced by angle-resolved Raman measurements, and the overall results open a clear pathway for layer-by-layer growth of tellurene sheets with controlled crystalline anisotropy using conventional synthesis techniques.

AB - Recent results have identified two-dimensional (2D) tellurene as a potential van der Waals (vdW) material for thermoelectric and optoelectronics applications owing to their pseudo-one-dimensional (anisotropic) behavior and structure. While hydrothermal synthesis is suitable for yielding potentially crystalline materials, it is well known for its incompatibility with manufacturing and scaling. There is an urgent need for synthesis of tellurene sheets in vdW layered form with the desired crystallinity as well as controlled crystalline anisotropy using more conventional and scalable processes. Here, we report on the synthesis of tellurene sheets onto a variety of surfaces of vdW-bonded 2D layered crystals in their trigonal layered form with controlled tellurene chain (anisotropy) direction using horizontal physical vapor deposition method. Our systematic tellurene growth studies on six different vdW surfaces show that GaS and GaSe surfaces enable highly crystalline and self-oriented tellurene sheets. Detailed cross-sectional transmission electron microscopy (TEM), angle-resolved Raman spectroscopy, scanning electron microscopy, and energy-dispersive spectroscopy measurements provide fundamental insights into the growth dynamics and characteristics of tellurene. First-principles calculations and cross-sectional TEM measurements suggest that tellurene chains are well-oriented along the GaSe armchair lattice direction owing to the much-reduced total energy of the system and a stronger degree of coupling across adjacent layers. Synthesized tellurene sheets exhibit remarkable structural anisotropy, as evidenced by angle-resolved Raman measurements, and the overall results open a clear pathway for layer-by-layer growth of tellurene sheets with controlled crystalline anisotropy using conventional synthesis techniques.

UR - http://www.scopus.com/inward/record.url?scp=85059830526&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85059830526&partnerID=8YFLogxK

U2 - 10.1103/PhysRevMaterials.2.104002

DO - 10.1103/PhysRevMaterials.2.104002

M3 - Article

AN - SCOPUS:85059830526

VL - 2

JO - Physical Review Materials

JF - Physical Review Materials

SN - 2475-9953

IS - 10

M1 - 104002

ER -