Highly conductive ZnO grown by pulsed laser deposition in pure Ar

Robin C. Scott; Kevin D. Leedy; Burhan Bayraktaroglu; David C. Look; Yong-Hang Zhang

doi:10.1063/1.3481372

Highly conductive ZnO grown by pulsed laser deposition in pure Ar

Robin C. Scott, Kevin D. Leedy, Burhan Bayraktaroglu, David C. Look, Yong-Hang Zhang

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Abstract

Ga-doped ZnO was deposited by pulsed laser deposition at 200 °C on SiO₂/Si, Al₂O₃, or quartz in 10 mTorr of pure Ar. The as-grown, bulk resistivity at 300 K is 1.8× 10^-4 Ω cm, three-times lower than that of films deposited at 200 °C in 10 mTorr of O² followed by an anneal at 400 °C in forming gas. Furthermore, depth uniformity of the electrical properties is much improved. Mobility analysis shows that this excellent resistivity is mostly due to an increase in donor concentration, rather than a decrease in acceptor concentration. Optical transmittance is approximately 90% in the visible and near-IR spectral regions.

Original language	English (US)
Article number	072113
Journal	Applied Physics Letters
Volume	97
Issue number	7
DOIs	https://doi.org/10.1063/1.3481372
State	Published - Aug 16 2010

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ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Scott, R. C., Leedy, K. D., Bayraktaroglu, B., Look, D. C., & Zhang, Y-H. (2010). Highly conductive ZnO grown by pulsed laser deposition in pure Ar. Applied Physics Letters, 97(7), [072113]. https://doi.org/10.1063/1.3481372

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abstract = "Ga-doped ZnO was deposited by pulsed laser deposition at 200 °C on SiO2/Si, Al2O3, or quartz in 10 mTorr of pure Ar. The as-grown, bulk resistivity at 300 K is 1.8× 10-4 Ω cm, three-times lower than that of films deposited at 200 °C in 10 mTorr of O2 followed by an anneal at 400 °C in forming gas. Furthermore, depth uniformity of the electrical properties is much improved. Mobility analysis shows that this excellent resistivity is mostly due to an increase in donor concentration, rather than a decrease in acceptor concentration. Optical transmittance is approximately 90% in the visible and near-IR spectral regions.",

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AB - Ga-doped ZnO was deposited by pulsed laser deposition at 200 °C on SiO2/Si, Al2O3, or quartz in 10 mTorr of pure Ar. The as-grown, bulk resistivity at 300 K is 1.8× 10-4 Ω cm, three-times lower than that of films deposited at 200 °C in 10 mTorr of O2 followed by an anneal at 400 °C in forming gas. Furthermore, depth uniformity of the electrical properties is much improved. Mobility analysis shows that this excellent resistivity is mostly due to an increase in donor concentration, rather than a decrease in acceptor concentration. Optical transmittance is approximately 90% in the visible and near-IR spectral regions.

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10.1063/1.3481372