@article{051fcd5bc53644f78b62fcb4ebbc7e14,
title = "Highly conductive ZnO grown by pulsed laser deposition in pure Ar",
abstract = "Ga-doped ZnO was deposited by pulsed laser deposition at 200 °C on SiO2/Si, Al2O3, or quartz in 10 mTorr of pure Ar. The as-grown, bulk resistivity at 300 K is 1.8× 10-4 Ω cm, three-times lower than that of films deposited at 200 °C in 10 mTorr of O2 followed by an anneal at 400 °C in forming gas. Furthermore, depth uniformity of the electrical properties is much improved. Mobility analysis shows that this excellent resistivity is mostly due to an increase in donor concentration, rather than a decrease in acceptor concentration. Optical transmittance is approximately 90% in the visible and near-IR spectral regions.",
author = "Scott, {Robin C.} and Leedy, {Kevin D.} and Burhan Bayraktaroglu and Look, {David C.} and Yong-Hang Zhang",
note = "Funding Information: This work was carried out at the Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH. We wish to thank T. A. Cooper for the Hall-effect measurements. The work of R.C.S. and Y.H.Z. was partially supported by Science Foundation Arizona, Contract Nos. SRG 0190-07 and SRG 0339-08, and by the Air Force Research Laboratory/Space Vehicles Directorate, Contract No. FA9453-08-2-0228. The work of D.C.L. was partially supported by AFOSR under Grant No. FA9550-10-1-0079 (K. Reinhardt) and NSF under Grant No. DMR0803276 (L. Hess).",
year = "2010",
month = aug,
day = "16",
doi = "10.1063/1.3481372",
language = "English (US)",
volume = "97",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "7",
}