Abstract

Ga-doped ZnO was deposited by pulsed laser deposition at 200 °C on SiO2/Si, Al2O3, or quartz in 10 mTorr of pure Ar. The as-grown, bulk resistivity at 300 K is 1.8× 10-4 Ω cm, three-times lower than that of films deposited at 200 °C in 10 mTorr of O2 followed by an anneal at 400 °C in forming gas. Furthermore, depth uniformity of the electrical properties is much improved. Mobility analysis shows that this excellent resistivity is mostly due to an increase in donor concentration, rather than a decrease in acceptor concentration. Optical transmittance is approximately 90% in the visible and near-IR spectral regions.

Original languageEnglish (US)
Article number072113
JournalApplied Physics Letters
Volume97
Issue number7
DOIs
StatePublished - Aug 16 2010

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pulsed laser deposition
electrical resistivity
transmittance
quartz
electrical properties
gases

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Highly conductive ZnO grown by pulsed laser deposition in pure Ar. / Scott, Robin C.; Leedy, Kevin D.; Bayraktaroglu, Burhan; Look, David C.; Zhang, Yong-Hang.

In: Applied Physics Letters, Vol. 97, No. 7, 072113, 16.08.2010.

Research output: Contribution to journalArticle

Scott, Robin C. ; Leedy, Kevin D. ; Bayraktaroglu, Burhan ; Look, David C. ; Zhang, Yong-Hang. / Highly conductive ZnO grown by pulsed laser deposition in pure Ar. In: Applied Physics Letters. 2010 ; Vol. 97, No. 7.
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