Highly conductive ZnO grown by pulsed laser deposition in pure Ar

Robin C. Scott, Kevin D. Leedy, Burhan Bayraktaroglu, David C. Look, Yong-Hang Zhang

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43 Scopus citations


Ga-doped ZnO was deposited by pulsed laser deposition at 200 °C on SiO2/Si, Al2O3, or quartz in 10 mTorr of pure Ar. The as-grown, bulk resistivity at 300 K is 1.8× 10-4 Ω cm, three-times lower than that of films deposited at 200 °C in 10 mTorr of O2 followed by an anneal at 400 °C in forming gas. Furthermore, depth uniformity of the electrical properties is much improved. Mobility analysis shows that this excellent resistivity is mostly due to an increase in donor concentration, rather than a decrease in acceptor concentration. Optical transmittance is approximately 90% in the visible and near-IR spectral regions.

Original languageEnglish (US)
Article number072113
JournalApplied Physics Letters
Issue number7
StatePublished - Aug 16 2010

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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