Abstract
Ga-doped ZnO was deposited by pulsed laser deposition at 200 °C on SiO2/Si, Al2O3, or quartz in 10 mTorr of pure Ar. The as-grown, bulk resistivity at 300 K is 1.8× 10-4 Ω cm, three-times lower than that of films deposited at 200 °C in 10 mTorr of O2 followed by an anneal at 400 °C in forming gas. Furthermore, depth uniformity of the electrical properties is much improved. Mobility analysis shows that this excellent resistivity is mostly due to an increase in donor concentration, rather than a decrease in acceptor concentration. Optical transmittance is approximately 90% in the visible and near-IR spectral regions.
Original language | English (US) |
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Article number | 072113 |
Journal | Applied Physics Letters |
Volume | 97 |
Issue number | 7 |
DOIs | |
State | Published - Aug 16 2010 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)