Abstract
Ga-doped ZnO was deposited by pulsed laser deposition at 200 °C on SiO2/Si, Al2O3, or quartz in 10 mTorr of pure Ar. The as-grown, bulk resistivity at 300 K is 1.8× 10-4 Ω cm, three-times lower than that of films deposited at 200 °C in 10 mTorr of O2 followed by an anneal at 400 °C in forming gas. Furthermore, depth uniformity of the electrical properties is much improved. Mobility analysis shows that this excellent resistivity is mostly due to an increase in donor concentration, rather than a decrease in acceptor concentration. Optical transmittance is approximately 90% in the visible and near-IR spectral regions.
| Original language | English (US) |
|---|---|
| Article number | 072113 |
| Journal | Applied Physics Letters |
| Volume | 97 |
| Issue number | 7 |
| DOIs | |
| State | Published - Aug 16 2010 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Highly conductive ZnO grown by pulsed laser deposition in pure Ar. / Scott, Robin C.; Leedy, Kevin D.; Bayraktaroglu, Burhan; Look, David C.; Zhang, Yong-Hang.
In: Applied Physics Letters, Vol. 97, No. 7, 072113, 16.08.2010.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Highly conductive ZnO grown by pulsed laser deposition in pure Ar
AU - Scott, Robin C.
AU - Leedy, Kevin D.
AU - Bayraktaroglu, Burhan
AU - Look, David C.
AU - Zhang, Yong-Hang
PY - 2010/8/16
Y1 - 2010/8/16
N2 - Ga-doped ZnO was deposited by pulsed laser deposition at 200 °C on SiO2/Si, Al2O3, or quartz in 10 mTorr of pure Ar. The as-grown, bulk resistivity at 300 K is 1.8× 10-4 Ω cm, three-times lower than that of films deposited at 200 °C in 10 mTorr of O2 followed by an anneal at 400 °C in forming gas. Furthermore, depth uniformity of the electrical properties is much improved. Mobility analysis shows that this excellent resistivity is mostly due to an increase in donor concentration, rather than a decrease in acceptor concentration. Optical transmittance is approximately 90% in the visible and near-IR spectral regions.
AB - Ga-doped ZnO was deposited by pulsed laser deposition at 200 °C on SiO2/Si, Al2O3, or quartz in 10 mTorr of pure Ar. The as-grown, bulk resistivity at 300 K is 1.8× 10-4 Ω cm, three-times lower than that of films deposited at 200 °C in 10 mTorr of O2 followed by an anneal at 400 °C in forming gas. Furthermore, depth uniformity of the electrical properties is much improved. Mobility analysis shows that this excellent resistivity is mostly due to an increase in donor concentration, rather than a decrease in acceptor concentration. Optical transmittance is approximately 90% in the visible and near-IR spectral regions.
UR - http://www.scopus.com/inward/record.url?scp=77956033674&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77956033674&partnerID=8YFLogxK
U2 - 10.1063/1.3481372
DO - 10.1063/1.3481372
M3 - Article
AN - SCOPUS:77956033674
VL - 97
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 7
M1 - 072113
ER -