TY - JOUR
T1 - Highly (111)-oriented and conformal iridium films by liquid source metalorganic chemical vapor deposition
AU - Goswami, Jaydeb
AU - Wang, Chang Gong
AU - Majhi, Prashant
AU - Shin, Yong Wook
AU - Dey, Sandwip
N1 - Funding Information:
The authors thank Frank S. Wagner of Strem Chemicals, Inc. for the Ir precursor, Prasad Alluri of Motorola and Mike Racine of Applied Materials for the patterned wafers, and David Wright, Tim Karcher, Mike Mckelvy, and Barry Wilkens of Arizona State University for assistance with the various characterization techniques. The authors also acknowledge the support of the National Science Foundation (Contract No. ECS0000121) and DARPA-DSO (Contract No. N00014-00-1-0471).
PY - 2001/8
Y1 - 2001/8
N2 - Highly (111)-oriented and conformal iridium (Ir) films were deposited by a liquid source metalorganic-chemical-vapor-deposition process on various substrates. An oxygen-assisted pyrolysis of (methylcyclopentadienyl) (1,5-cyclooctadiene) Ir precursor at a wide range of substrate temperatures (Tsub) between 300 and 700 °C was used. At a low Tsub of 350 °C, the randomly oriented polycrystalline films exhibited an I111/I200 x-ray intensity ratio of 6. However, the films deposited at Tsub = 700 °C on native SiO2 and amorphous SiO2 surfaces were highly oriented with the I111/I200 ratios of 277 and 186, respectively. The transmission electron microscopy study revealed continuous, dense, and faceted microstructures of Ir films. Also, the step coverage of Ir on TiN (64%) was higher than that on amorphous SiO2 (50%) surfaces.
AB - Highly (111)-oriented and conformal iridium (Ir) films were deposited by a liquid source metalorganic-chemical-vapor-deposition process on various substrates. An oxygen-assisted pyrolysis of (methylcyclopentadienyl) (1,5-cyclooctadiene) Ir precursor at a wide range of substrate temperatures (Tsub) between 300 and 700 °C was used. At a low Tsub of 350 °C, the randomly oriented polycrystalline films exhibited an I111/I200 x-ray intensity ratio of 6. However, the films deposited at Tsub = 700 °C on native SiO2 and amorphous SiO2 surfaces were highly oriented with the I111/I200 ratios of 277 and 186, respectively. The transmission electron microscopy study revealed continuous, dense, and faceted microstructures of Ir films. Also, the step coverage of Ir on TiN (64%) was higher than that on amorphous SiO2 (50%) surfaces.
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U2 - 10.1557/JMR.2001.0300
DO - 10.1557/JMR.2001.0300
M3 - Article
AN - SCOPUS:0035436240
SN - 0884-2914
VL - 16
SP - 2192
EP - 2195
JO - Journal of Materials Research
JF - Journal of Materials Research
IS - 8
ER -