High-yield fabrication method for high-frequency graphene devices using titanium sacrificial layers

Panagiotis C. Theofanopoulos, Scott Ageno, Yuqi Guo, Suneet Kale, Qing Wang, Georgios Trichopoulos

Research output: Contribution to journalArticle

Abstract

The authors present a fabrication process for the development of high-frequency (>30 GHz) on-wafer graphene devices with the use of titanium sacrificial layers. Graphene patterning requires chemical processes that have deleterious effects on graphene resulting in very low yield. The authors prevent delamination of the delicate graphene from the substrate during the fabrication steps by depositing a blanketing 30 nm titanium layer at the beginning of the process. Additionally, titanium is a low cost, hazardless, and well-established material in the semiconductor industry and, therefore, constitutes an attractive solution for graphene protection. With the proposed blanketing approach, the authors obtain more than 90% device yield, allowing the development of graphene-based reconfigurable, large-area, high-frequency topologies such as antenna arrays. Without the use of this titanium sacrificial layer, they show that the expected yield plummets. In addition, they validate the proposed fabrication procedure through on-wafer measurements in the 220-330 GHz range.

Original languageEnglish (US)
Article number041801
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume37
Issue number4
DOIs
StatePublished - Jul 1 2019

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Titanium
Graphene
graphene
titanium
Fabrication
fabrication
wafers
Antenna arrays
Delamination
antenna arrays
Topology
Graphene devices
Semiconductor materials
topology
industries
Substrates
Costs
Industry

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

High-yield fabrication method for high-frequency graphene devices using titanium sacrificial layers. / Theofanopoulos, Panagiotis C.; Ageno, Scott; Guo, Yuqi; Kale, Suneet; Wang, Qing; Trichopoulos, Georgios.

In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 37, No. 4, 041801, 01.07.2019.

Research output: Contribution to journalArticle

@article{733ab954a41e43739f59ea53b66e06d3,
title = "High-yield fabrication method for high-frequency graphene devices using titanium sacrificial layers",
abstract = "The authors present a fabrication process for the development of high-frequency (>30 GHz) on-wafer graphene devices with the use of titanium sacrificial layers. Graphene patterning requires chemical processes that have deleterious effects on graphene resulting in very low yield. The authors prevent delamination of the delicate graphene from the substrate during the fabrication steps by depositing a blanketing 30 nm titanium layer at the beginning of the process. Additionally, titanium is a low cost, hazardless, and well-established material in the semiconductor industry and, therefore, constitutes an attractive solution for graphene protection. With the proposed blanketing approach, the authors obtain more than 90{\%} device yield, allowing the development of graphene-based reconfigurable, large-area, high-frequency topologies such as antenna arrays. Without the use of this titanium sacrificial layer, they show that the expected yield plummets. In addition, they validate the proposed fabrication procedure through on-wafer measurements in the 220-330 GHz range.",
author = "Theofanopoulos, {Panagiotis C.} and Scott Ageno and Yuqi Guo and Suneet Kale and Qing Wang and Georgios Trichopoulos",
year = "2019",
month = "7",
day = "1",
doi = "10.1116/1.5098324",
language = "English (US)",
volume = "37",
journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",
issn = "2166-2746",
publisher = "AVS Science and Technology Society",
number = "4",

}

TY - JOUR

T1 - High-yield fabrication method for high-frequency graphene devices using titanium sacrificial layers

AU - Theofanopoulos, Panagiotis C.

AU - Ageno, Scott

AU - Guo, Yuqi

AU - Kale, Suneet

AU - Wang, Qing

AU - Trichopoulos, Georgios

PY - 2019/7/1

Y1 - 2019/7/1

N2 - The authors present a fabrication process for the development of high-frequency (>30 GHz) on-wafer graphene devices with the use of titanium sacrificial layers. Graphene patterning requires chemical processes that have deleterious effects on graphene resulting in very low yield. The authors prevent delamination of the delicate graphene from the substrate during the fabrication steps by depositing a blanketing 30 nm titanium layer at the beginning of the process. Additionally, titanium is a low cost, hazardless, and well-established material in the semiconductor industry and, therefore, constitutes an attractive solution for graphene protection. With the proposed blanketing approach, the authors obtain more than 90% device yield, allowing the development of graphene-based reconfigurable, large-area, high-frequency topologies such as antenna arrays. Without the use of this titanium sacrificial layer, they show that the expected yield plummets. In addition, they validate the proposed fabrication procedure through on-wafer measurements in the 220-330 GHz range.

AB - The authors present a fabrication process for the development of high-frequency (>30 GHz) on-wafer graphene devices with the use of titanium sacrificial layers. Graphene patterning requires chemical processes that have deleterious effects on graphene resulting in very low yield. The authors prevent delamination of the delicate graphene from the substrate during the fabrication steps by depositing a blanketing 30 nm titanium layer at the beginning of the process. Additionally, titanium is a low cost, hazardless, and well-established material in the semiconductor industry and, therefore, constitutes an attractive solution for graphene protection. With the proposed blanketing approach, the authors obtain more than 90% device yield, allowing the development of graphene-based reconfigurable, large-area, high-frequency topologies such as antenna arrays. Without the use of this titanium sacrificial layer, they show that the expected yield plummets. In addition, they validate the proposed fabrication procedure through on-wafer measurements in the 220-330 GHz range.

UR - http://www.scopus.com/inward/record.url?scp=85068365873&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85068365873&partnerID=8YFLogxK

U2 - 10.1116/1.5098324

DO - 10.1116/1.5098324

M3 - Article

AN - SCOPUS:85068365873

VL - 37

JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

SN - 2166-2746

IS - 4

M1 - 041801

ER -