High Voltage Vertical GaN p-n Diodes with Hydrogen-Plasma Based Guard Rings

Houqiang Fu; Jossue Montes; Xuguang Deng; Xin Qi; Stephen M. Goodnick; Fernando A. Ponce; Yuji Zhao; Kai Fu; Shanthan R. Alugubelli; Chi Yin Cheng; Xuanqi Huang; Hong Chen; Tsung Han Yang; Chen Yang; Jingan Zhou

doi:10.1109/LED.2019.2954123

High Voltage Vertical GaN p-n Diodes with Hydrogen-Plasma Based Guard Rings

Houqiang Fu, Jossue Montes, Xuguang Deng, Xin Qi, Stephen M. Goodnick, Fernando A. Ponce, Yuji Zhao, Kai Fu, Shanthan R. Alugubelli, Chi Yin Cheng, Xuanqi Huang, Hong Chen, Tsung Han Yang, Chen Yang, Jingan Zhou

Research output: Contribution to journal › Article

Abstract

This letter demonstrates novel hydrogen-plasma based guard rings (GRs) for high voltage vertical GaN p-n diodes grown on bulk GaN substrates by metalorganic chemical vapor deposition (MOCVD). The GR structure can significantly improve breakdown voltages (BV) and critical electric fields (E_c) of the devices. Not having field plates or passivation, the p-n diodes with a 9 μm drift layer and 10 GRs showed BV/on-resistance (R_on) of 1.70 kV/0.65 mΩ cm², which are close to the GaN theoretical limit. Moreover, the device also exhibited good rectifying behaviors with an on-current of 2.6 kA/cm², an on/off ratio of 10¹⁰, and a turn-on voltage of 3.56 V. This work represents one of the first effective GR techniques for high performance kV-class GaN p-n diodes.

Original language	English (US)
Article number	8906086
Pages (from-to)	127-130
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	41
Issue number	1
DOIs	https://doi.org/10.1109/LED.2019.2954123
State	Published - Jan 2020

Fingerprint

Keywords

edge termination
Gallium nitride
guard ring
p-n diodes
power electronics
wide bandgap semiconductor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Fu, H., Montes, J., Deng, X., Qi, X., Goodnick, S. M., Ponce, F. A., Zhao, Y., Fu, K., Alugubelli, S. R., Cheng, C. Y., Huang, X., Chen, H., Yang, T. H., Yang, C., & Zhou, J. (2020). High Voltage Vertical GaN p-n Diodes with Hydrogen-Plasma Based Guard Rings. IEEE Electron Device Letters, 41(1), 127-130. [8906086]. https://doi.org/10.1109/LED.2019.2954123

High Voltage Vertical GaN p-n Diodes with Hydrogen-Plasma Based Guard Rings. / Fu, Houqiang; Montes, Jossue; Deng, Xuguang; Qi, Xin; Goodnick, Stephen M.; Ponce, Fernando A.; Zhao, Yuji; Fu, Kai; Alugubelli, Shanthan R.; Cheng, Chi Yin; Huang, Xuanqi; Chen, Hong; Yang, Tsung Han; Yang, Chen; Zhou, Jingan.

In: IEEE Electron Device Letters, Vol. 41, No. 1, 8906086, 01.2020, p. 127-130.

Research output: Contribution to journal › Article

Fu, Houqiang ; Montes, Jossue ; Deng, Xuguang ; Qi, Xin ; Goodnick, Stephen M. ; Ponce, Fernando A. ; Zhao, Yuji ; Fu, Kai ; Alugubelli, Shanthan R. ; Cheng, Chi Yin ; Huang, Xuanqi ; Chen, Hong ; Yang, Tsung Han ; Yang, Chen ; Zhou, Jingan. / High Voltage Vertical GaN p-n Diodes with Hydrogen-Plasma Based Guard Rings. In: IEEE Electron Device Letters. 2020 ; Vol. 41, No. 1. pp. 127-130.

@article{463999a6fa5643459723d53b75f4db95,

title = "High Voltage Vertical GaN p-n Diodes with Hydrogen-Plasma Based Guard Rings",

abstract = "This letter demonstrates novel hydrogen-plasma based guard rings (GRs) for high voltage vertical GaN p-n diodes grown on bulk GaN substrates by metalorganic chemical vapor deposition (MOCVD). The GR structure can significantly improve breakdown voltages (BV) and critical electric fields (Ec) of the devices. Not having field plates or passivation, the p-n diodes with a 9 μm drift layer and 10 GRs showed BV/on-resistance (Ron) of 1.70 kV/0.65 mΩ cm2, which are close to the GaN theoretical limit. Moreover, the device also exhibited good rectifying behaviors with an on-current of 2.6 kA/cm2, an on/off ratio of 1010, and a turn-on voltage of 3.56 V. This work represents one of the first effective GR techniques for high performance kV-class GaN p-n diodes.",

keywords = "edge termination, Gallium nitride, guard ring, p-n diodes, power electronics, wide bandgap semiconductor",

author = "Houqiang Fu and Jossue Montes and Xuguang Deng and Xin Qi and Goodnick, {Stephen M.} and Ponce, {Fernando A.} and Yuji Zhao and Kai Fu and Alugubelli, {Shanthan R.} and Cheng, {Chi Yin} and Xuanqi Huang and Hong Chen and Yang, {Tsung Han} and Chen Yang and Jingan Zhou",

year = "2020",

month = jan

doi = "10.1109/LED.2019.2954123",

language = "English (US)",

volume = "41",

pages = "127--130",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - High Voltage Vertical GaN p-n Diodes with Hydrogen-Plasma Based Guard Rings

AU - Fu, Houqiang

AU - Montes, Jossue

AU - Deng, Xuguang

AU - Qi, Xin

AU - Goodnick, Stephen M.

AU - Ponce, Fernando A.

AU - Zhao, Yuji

AU - Fu, Kai

AU - Alugubelli, Shanthan R.

AU - Cheng, Chi Yin

AU - Huang, Xuanqi

AU - Chen, Hong

AU - Yang, Tsung Han

AU - Yang, Chen

AU - Zhou, Jingan

PY - 2020/1

Y1 - 2020/1

N2 - This letter demonstrates novel hydrogen-plasma based guard rings (GRs) for high voltage vertical GaN p-n diodes grown on bulk GaN substrates by metalorganic chemical vapor deposition (MOCVD). The GR structure can significantly improve breakdown voltages (BV) and critical electric fields (Ec) of the devices. Not having field plates or passivation, the p-n diodes with a 9 μm drift layer and 10 GRs showed BV/on-resistance (Ron) of 1.70 kV/0.65 mΩ cm2, which are close to the GaN theoretical limit. Moreover, the device also exhibited good rectifying behaviors with an on-current of 2.6 kA/cm2, an on/off ratio of 1010, and a turn-on voltage of 3.56 V. This work represents one of the first effective GR techniques for high performance kV-class GaN p-n diodes.

AB - This letter demonstrates novel hydrogen-plasma based guard rings (GRs) for high voltage vertical GaN p-n diodes grown on bulk GaN substrates by metalorganic chemical vapor deposition (MOCVD). The GR structure can significantly improve breakdown voltages (BV) and critical electric fields (Ec) of the devices. Not having field plates or passivation, the p-n diodes with a 9 μm drift layer and 10 GRs showed BV/on-resistance (Ron) of 1.70 kV/0.65 mΩ cm2, which are close to the GaN theoretical limit. Moreover, the device also exhibited good rectifying behaviors with an on-current of 2.6 kA/cm2, an on/off ratio of 1010, and a turn-on voltage of 3.56 V. This work represents one of the first effective GR techniques for high performance kV-class GaN p-n diodes.

KW - edge termination

KW - Gallium nitride

KW - guard ring

KW - p-n diodes

KW - power electronics

KW - wide bandgap semiconductor

UR - http://www.scopus.com/inward/record.url?scp=85077794383&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85077794383&partnerID=8YFLogxK

U2 - 10.1109/LED.2019.2954123

DO - 10.1109/LED.2019.2954123

M3 - Article

AN - SCOPUS:85077794383

VL - 41

SP - 127

EP - 130

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 1

M1 - 8906086

ER -

Access to Document

10.1109/LED.2019.2954123