@article{463999a6fa5643459723d53b75f4db95,
title = "High Voltage Vertical GaN p-n Diodes with Hydrogen-Plasma Based Guard Rings",
abstract = "This letter demonstrates novel hydrogen-plasma based guard rings (GRs) for high voltage vertical GaN p-n diodes grown on bulk GaN substrates by metalorganic chemical vapor deposition (MOCVD). The GR structure can significantly improve breakdown voltages (BV) and critical electric fields (Ec) of the devices. Not having field plates or passivation, the p-n diodes with a 9 μm drift layer and 10 GRs showed BV/on-resistance (Ron) of 1.70 kV/0.65 mΩ cm2, which are close to the GaN theoretical limit. Moreover, the device also exhibited good rectifying behaviors with an on-current of 2.6 kA/cm2, an on/off ratio of 1010, and a turn-on voltage of 3.56 V. This work represents one of the first effective GR techniques for high performance kV-class GaN p-n diodes.",
keywords = "Gallium nitride, edge termination, guard ring, p-n diodes, power electronics, wide bandgap semiconductor",
author = "Houqiang Fu and Jossue Montes and Xuguang Deng and Xin Qi and Goodnick, {Stephen M.} and Ponce, {Fernando A.} and Yuji Zhao and Kai Fu and Alugubelli, {Shanthan R.} and Cheng, {Chi Yin} and Xuanqi Huang and Hong Chen and Yang, {Tsung Han} and Chen Yang and Jingan Zhou",
note = "Funding Information: Manuscript received November 2, 2019; accepted November 14, 2019. Date of publication November 19, 2019; date of current version December 27, 2019. This work was supported by the ARPA-E PNDIODES Program monitored by Dr. I. Kizilyalli. The review of this letter was arranged by Editor D. G. Senesky. (Houqiang Fu and Kai Fu contributed equally to this work.) (Corresponding authors: Houqiang Fu; Yuji Zhao.) H. Fu, K. Fu, C.-Y. Cheng, X. Huang, H. Chen, T.-H. Yang, C. Yang, J. Zhou, J. Montes, X. Deng, X. Qi, S. M. Goodnick, and Y. Zhao are with the School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, AZ 85287 USA (e-mail: houqiang@asu.edu; yuji.zhao@asu.edu). Publisher Copyright: {\textcopyright} 2019 IEEE.",
year = "2020",
month = jan,
doi = "10.1109/LED.2019.2954123",
language = "English (US)",
volume = "41",
pages = "127--130",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1",
}