High Voltage Vertical GaN p-n Diodes with Hydrogen-Plasma Based Guard Rings

Houqiang Fu; Jossue Montes; Xuguang Deng; Xin Qi; Stephen M. Goodnick; Fernando A. Ponce; Yuji Zhao; Kai Fu; Shanthan R. Alugubelli; Chi Yin Cheng; Xuanqi Huang; Hong Chen; Tsung Han Yang; Chen Yang; Jingan Zhou

doi:10.1109/LED.2019.2954123

High Voltage Vertical GaN p-n Diodes with Hydrogen-Plasma Based Guard Rings

Houqiang Fu, Jossue Montes, Xuguang Deng, Xin Qi, Stephen M. Goodnick, Fernando A. Ponce, Yuji Zhao, Kai Fu, Shanthan R. Alugubelli, Chi Yin Cheng, Xuanqi Huang, Hong Chen, Tsung Han Yang, Chen Yang, Jingan Zhou

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

This letter demonstrates novel hydrogen-plasma based guard rings (GRs) for high voltage vertical GaN p-n diodes grown on bulk GaN substrates by metalorganic chemical vapor deposition (MOCVD). The GR structure can significantly improve breakdown voltages (BV) and critical electric fields (E_c) of the devices. Not having field plates or passivation, the p-n diodes with a 9 μm drift layer and 10 GRs showed BV/on-resistance (R_on) of 1.70 kV/0.65 mΩ cm², which are close to the GaN theoretical limit. Moreover, the device also exhibited good rectifying behaviors with an on-current of 2.6 kA/cm², an on/off ratio of 10¹⁰, and a turn-on voltage of 3.56 V. This work represents one of the first effective GR techniques for high performance kV-class GaN p-n diodes.

Original language	English (US)
Article number	8906086
Pages (from-to)	127-130
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	41
Issue number	1
DOIs	https://doi.org/10.1109/LED.2019.2954123
State	Published - Jan 2020

Keywords

Gallium nitride
edge termination
guard ring
p-n diodes
power electronics
wide bandgap semiconductor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2019.2954123

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High Voltage Vertical GaN p-n Diodes with Hydrogen-Plasma Based Guard Rings. / Fu, Houqiang; Montes, Jossue; Deng, Xuguang; Qi, Xin; Goodnick, Stephen M.; Ponce, Fernando A.; Zhao, Yuji; Fu, Kai; Alugubelli, Shanthan R.; Cheng, Chi Yin; Huang, Xuanqi; Chen, Hong; Yang, Tsung Han; Yang, Chen; Zhou, Jingan.

In: IEEE Electron Device Letters, Vol. 41, No. 1, 8906086, 01.2020, p. 127-130.

Research output: Contribution to journal › Article › peer-review

Fu, Houqiang ; Montes, Jossue ; Deng, Xuguang ; Qi, Xin ; Goodnick, Stephen M. ; Ponce, Fernando A. ; Zhao, Yuji ; Fu, Kai ; Alugubelli, Shanthan R. ; Cheng, Chi Yin ; Huang, Xuanqi ; Chen, Hong ; Yang, Tsung Han ; Yang, Chen ; Zhou, Jingan. / High Voltage Vertical GaN p-n Diodes with Hydrogen-Plasma Based Guard Rings. In: IEEE Electron Device Letters. 2020 ; Vol. 41, No. 1. pp. 127-130.

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title = "High Voltage Vertical GaN p-n Diodes with Hydrogen-Plasma Based Guard Rings",

abstract = "This letter demonstrates novel hydrogen-plasma based guard rings (GRs) for high voltage vertical GaN p-n diodes grown on bulk GaN substrates by metalorganic chemical vapor deposition (MOCVD). The GR structure can significantly improve breakdown voltages (BV) and critical electric fields (Ec) of the devices. Not having field plates or passivation, the p-n diodes with a 9 μm drift layer and 10 GRs showed BV/on-resistance (Ron) of 1.70 kV/0.65 mΩ cm2, which are close to the GaN theoretical limit. Moreover, the device also exhibited good rectifying behaviors with an on-current of 2.6 kA/cm2, an on/off ratio of 1010, and a turn-on voltage of 3.56 V. This work represents one of the first effective GR techniques for high performance kV-class GaN p-n diodes.",

keywords = "Gallium nitride, edge termination, guard ring, p-n diodes, power electronics, wide bandgap semiconductor",

author = "Houqiang Fu and Jossue Montes and Xuguang Deng and Xin Qi and Goodnick, {Stephen M.} and Ponce, {Fernando A.} and Yuji Zhao and Kai Fu and Alugubelli, {Shanthan R.} and Cheng, {Chi Yin} and Xuanqi Huang and Hong Chen and Yang, {Tsung Han} and Chen Yang and Jingan Zhou",

note = "Funding Information: Manuscript received November 2, 2019; accepted November 14, 2019. Date of publication November 19, 2019; date of current version December 27, 2019. This work was supported by the ARPA-E PNDIODES Program monitored by Dr. I. Kizilyalli. The review of this letter was arranged by Editor D. G. Senesky. (Houqiang Fu and Kai Fu contributed equally to this work.) (Corresponding authors: Houqiang Fu; Yuji Zhao.) H. Fu, K. Fu, C.-Y. Cheng, X. Huang, H. Chen, T.-H. Yang, C. Yang, J. Zhou, J. Montes, X. Deng, X. Qi, S. M. Goodnick, and Y. Zhao are with the School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, AZ 85287 USA (e-mail: houqiang@asu.edu; yuji.zhao@asu.edu). Publisher Copyright: {\textcopyright} 2019 IEEE.",

year = "2020",

month = jan,

doi = "10.1109/LED.2019.2954123",

language = "English (US)",

volume = "41",

pages = "127--130",

journal = "IEEE Electron Device Letters",

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AU - Fu, Houqiang

AU - Montes, Jossue

AU - Deng, Xuguang

AU - Qi, Xin

AU - Goodnick, Stephen M.

AU - Ponce, Fernando A.

AU - Zhao, Yuji

AU - Fu, Kai

AU - Alugubelli, Shanthan R.

AU - Cheng, Chi Yin

AU - Huang, Xuanqi

AU - Chen, Hong

AU - Yang, Tsung Han

AU - Yang, Chen

AU - Zhou, Jingan

N1 - Funding Information: Manuscript received November 2, 2019; accepted November 14, 2019. Date of publication November 19, 2019; date of current version December 27, 2019. This work was supported by the ARPA-E PNDIODES Program monitored by Dr. I. Kizilyalli. The review of this letter was arranged by Editor D. G. Senesky. (Houqiang Fu and Kai Fu contributed equally to this work.) (Corresponding authors: Houqiang Fu; Yuji Zhao.) H. Fu, K. Fu, C.-Y. Cheng, X. Huang, H. Chen, T.-H. Yang, C. Yang, J. Zhou, J. Montes, X. Deng, X. Qi, S. M. Goodnick, and Y. Zhao are with the School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, AZ 85287 USA (e-mail: houqiang@asu.edu; yuji.zhao@asu.edu). Publisher Copyright: © 2019 IEEE.

PY - 2020/1

Y1 - 2020/1

N2 - This letter demonstrates novel hydrogen-plasma based guard rings (GRs) for high voltage vertical GaN p-n diodes grown on bulk GaN substrates by metalorganic chemical vapor deposition (MOCVD). The GR structure can significantly improve breakdown voltages (BV) and critical electric fields (Ec) of the devices. Not having field plates or passivation, the p-n diodes with a 9 μm drift layer and 10 GRs showed BV/on-resistance (Ron) of 1.70 kV/0.65 mΩ cm2, which are close to the GaN theoretical limit. Moreover, the device also exhibited good rectifying behaviors with an on-current of 2.6 kA/cm2, an on/off ratio of 1010, and a turn-on voltage of 3.56 V. This work represents one of the first effective GR techniques for high performance kV-class GaN p-n diodes.

AB - This letter demonstrates novel hydrogen-plasma based guard rings (GRs) for high voltage vertical GaN p-n diodes grown on bulk GaN substrates by metalorganic chemical vapor deposition (MOCVD). The GR structure can significantly improve breakdown voltages (BV) and critical electric fields (Ec) of the devices. Not having field plates or passivation, the p-n diodes with a 9 μm drift layer and 10 GRs showed BV/on-resistance (Ron) of 1.70 kV/0.65 mΩ cm2, which are close to the GaN theoretical limit. Moreover, the device also exhibited good rectifying behaviors with an on-current of 2.6 kA/cm2, an on/off ratio of 1010, and a turn-on voltage of 3.56 V. This work represents one of the first effective GR techniques for high performance kV-class GaN p-n diodes.

KW - Gallium nitride

KW - edge termination

KW - guard ring

KW - p-n diodes

KW - power electronics

KW - wide bandgap semiconductor

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 1

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ER -

High Voltage Vertical GaN p-n Diodes with Hydrogen-Plasma Based Guard Rings

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Keywords

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