High-voltage, low-current GaInP/GaInP/GaAs/GaInNAs/Ge solar cells

Richard King, P. C. Colter, D. E. Joslin, K. M. Edmondson, D. D. Krut, N. H. Karam, Sarah Kurtz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

21 Citations (Scopus)

Abstract

Four-junction GaInP/GaAs/GaInNAs/Ge solar cells are a widely-pursued route toward AMO efficiencies of 35% and above, and terrestrial efficiencies of up to 40%. Extensive research into the new material system of GaInNAs has so far yielded subcells with AMO current densities far below the ∼17 mA/cm2 needed to current match the other subcells in the stack. A new multijunction structure, a 5-junction GaInP/GaInP/GaAs/GaInNAs/Ge cell, divides the solar spectrum more finely in order to relax this current matching requirement, by using an optically thin, high-bandgap Gainp top subcell, with an additional thick, low-bandgap Gainp subcell beneath it, in combination with a GaInNAs subcell. In this way, the 5-junction cell design allows the practical use of GaInNAs subcells to increase the efficiency of multijunction cells. Light I-V and external quantum efficiency measurements of the component subcells of such 5-junction cells are discussed. Experimental results are presented for the first time on GaInP/GaInP/GaAs/GaInNAs/Ge cells with the top four junctions active, with measured Voc of 3.90 V.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages852-855
Number of pages4
StatePublished - 2002
Externally publishedYes
Event29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States
Duration: May 19 2002May 24 2002

Other

Other29th IEEE Photovoltaic Specialists Conference
CountryUnited States
CityNew Orleans, LA
Period5/19/025/24/02

Fingerprint

low currents
high voltages
Solar cells
Energy gap
solar cells
Electric potential
cells
Quantum efficiency
Current density
solar spectra
quantum efficiency
routes
current density
requirements

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Condensed Matter Physics

Cite this

King, R., Colter, P. C., Joslin, D. E., Edmondson, K. M., Krut, D. D., Karam, N. H., & Kurtz, S. (2002). High-voltage, low-current GaInP/GaInP/GaAs/GaInNAs/Ge solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 852-855)

High-voltage, low-current GaInP/GaInP/GaAs/GaInNAs/Ge solar cells. / King, Richard; Colter, P. C.; Joslin, D. E.; Edmondson, K. M.; Krut, D. D.; Karam, N. H.; Kurtz, Sarah.

Conference Record of the IEEE Photovoltaic Specialists Conference. 2002. p. 852-855.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

King, R, Colter, PC, Joslin, DE, Edmondson, KM, Krut, DD, Karam, NH & Kurtz, S 2002, High-voltage, low-current GaInP/GaInP/GaAs/GaInNAs/Ge solar cells. in Conference Record of the IEEE Photovoltaic Specialists Conference. pp. 852-855, 29th IEEE Photovoltaic Specialists Conference, New Orleans, LA, United States, 5/19/02.
King R, Colter PC, Joslin DE, Edmondson KM, Krut DD, Karam NH et al. High-voltage, low-current GaInP/GaInP/GaAs/GaInNAs/Ge solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference. 2002. p. 852-855
King, Richard ; Colter, P. C. ; Joslin, D. E. ; Edmondson, K. M. ; Krut, D. D. ; Karam, N. H. ; Kurtz, Sarah. / High-voltage, low-current GaInP/GaInP/GaAs/GaInNAs/Ge solar cells. Conference Record of the IEEE Photovoltaic Specialists Conference. 2002. pp. 852-855
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