High-voltage, low-current GaInP/GaInP/GaAs/GaInNAs/Ge solar cells

Richard King; P. C. Colter; D. E. Joslin; K. M. Edmondson; D. D. Krut; N. H. Karam; Sarah Kurtz

High-voltage, low-current GaInP/GaInP/GaAs/GaInNAs/Ge solar cells

Richard King, P. C. Colter, D. E. Joslin, K. M. Edmondson, D. D. Krut, N. H. Karam, Sarah Kurtz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Four-junction GaInP/GaAs/GaInNAs/Ge solar cells are a widely-pursued route toward AMO efficiencies of 35% and above, and terrestrial efficiencies of up to 40%. Extensive research into the new material system of GaInNAs has so far yielded subcells with AMO current densities far below the ∼17 mA/cm₂ needed to current match the other subcells in the stack. A new multijunction structure, a 5-junction GaInP/GaInP/GaAs/GaInNAs/Ge cell, divides the solar spectrum more finely in order to relax this current matching requirement, by using an optically thin, high-bandgap Gainp top subcell, with an additional thick, low-bandgap Gainp subcell beneath it, in combination with a GaInNAs subcell. In this way, the 5-junction cell design allows the practical use of GaInNAs subcells to increase the efficiency of multijunction cells. Light I-V and external quantum efficiency measurements of the component subcells of such 5-junction cells are discussed. Experimental results are presented for the first time on GaInP/GaInP/GaAs/GaInNAs/Ge cells with the top four junctions active, with measured V_oc of 3.90 V.

Original language	English (US)
Title of host publication	Conference Record of the IEEE Photovoltaic Specialists Conference
Pages	852-855
Number of pages	4
State	Published - 2002
Externally published	Yes
Event	29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States Duration: May 19 2002 → May 24 2002

Other

Other	29th IEEE Photovoltaic Specialists Conference
Country/Territory	United States
City	New Orleans, LA
Period	5/19/02 → 5/24/02

ASJC Scopus subject areas

Control and Systems Engineering
Condensed Matter Physics

Cite this

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title = "High-voltage, low-current GaInP/GaInP/GaAs/GaInNAs/Ge solar cells",

abstract = "Four-junction GaInP/GaAs/GaInNAs/Ge solar cells are a widely-pursued route toward AMO efficiencies of 35% and above, and terrestrial efficiencies of up to 40%. Extensive research into the new material system of GaInNAs has so far yielded subcells with AMO current densities far below the ∼17 mA/cm2 needed to current match the other subcells in the stack. A new multijunction structure, a 5-junction GaInP/GaInP/GaAs/GaInNAs/Ge cell, divides the solar spectrum more finely in order to relax this current matching requirement, by using an optically thin, high-bandgap Gainp top subcell, with an additional thick, low-bandgap Gainp subcell beneath it, in combination with a GaInNAs subcell. In this way, the 5-junction cell design allows the practical use of GaInNAs subcells to increase the efficiency of multijunction cells. Light I-V and external quantum efficiency measurements of the component subcells of such 5-junction cells are discussed. Experimental results are presented for the first time on GaInP/GaInP/GaAs/GaInNAs/Ge cells with the top four junctions active, with measured Voc of 3.90 V.",

author = "Richard King and Colter, {P. C.} and Joslin, {D. E.} and Edmondson, {K. M.} and Krut, {D. D.} and Karam, {N. H.} and Sarah Kurtz",

year = "2002",

language = "English (US)",

pages = "852--855",

booktitle = "Conference Record of the IEEE Photovoltaic Specialists Conference",

note = "29th IEEE Photovoltaic Specialists Conference ; Conference date: 19-05-2002 Through 24-05-2002",

}

TY - GEN

T1 - High-voltage, low-current GaInP/GaInP/GaAs/GaInNAs/Ge solar cells

AU - King, Richard

AU - Colter, P. C.

AU - Joslin, D. E.

AU - Edmondson, K. M.

AU - Krut, D. D.

AU - Karam, N. H.

AU - Kurtz, Sarah

PY - 2002

Y1 - 2002

N2 - Four-junction GaInP/GaAs/GaInNAs/Ge solar cells are a widely-pursued route toward AMO efficiencies of 35% and above, and terrestrial efficiencies of up to 40%. Extensive research into the new material system of GaInNAs has so far yielded subcells with AMO current densities far below the ∼17 mA/cm2 needed to current match the other subcells in the stack. A new multijunction structure, a 5-junction GaInP/GaInP/GaAs/GaInNAs/Ge cell, divides the solar spectrum more finely in order to relax this current matching requirement, by using an optically thin, high-bandgap Gainp top subcell, with an additional thick, low-bandgap Gainp subcell beneath it, in combination with a GaInNAs subcell. In this way, the 5-junction cell design allows the practical use of GaInNAs subcells to increase the efficiency of multijunction cells. Light I-V and external quantum efficiency measurements of the component subcells of such 5-junction cells are discussed. Experimental results are presented for the first time on GaInP/GaInP/GaAs/GaInNAs/Ge cells with the top four junctions active, with measured Voc of 3.90 V.

AB - Four-junction GaInP/GaAs/GaInNAs/Ge solar cells are a widely-pursued route toward AMO efficiencies of 35% and above, and terrestrial efficiencies of up to 40%. Extensive research into the new material system of GaInNAs has so far yielded subcells with AMO current densities far below the ∼17 mA/cm2 needed to current match the other subcells in the stack. A new multijunction structure, a 5-junction GaInP/GaInP/GaAs/GaInNAs/Ge cell, divides the solar spectrum more finely in order to relax this current matching requirement, by using an optically thin, high-bandgap Gainp top subcell, with an additional thick, low-bandgap Gainp subcell beneath it, in combination with a GaInNAs subcell. In this way, the 5-junction cell design allows the practical use of GaInNAs subcells to increase the efficiency of multijunction cells. Light I-V and external quantum efficiency measurements of the component subcells of such 5-junction cells are discussed. Experimental results are presented for the first time on GaInP/GaInP/GaAs/GaInNAs/Ge cells with the top four junctions active, with measured Voc of 3.90 V.

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M3 - Conference contribution

AN - SCOPUS:0036953419

SP - 852

EP - 855

BT - Conference Record of the IEEE Photovoltaic Specialists Conference

T2 - 29th IEEE Photovoltaic Specialists Conference

Y2 - 19 May 2002 through 24 May 2002

ER -

High-voltage, low-current GaInP/GaInP/GaAs/GaInNAs/Ge solar cells

Abstract

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ASJC Scopus subject areas

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