We present a comparative study of PIN structures in diamond on type IIa (100)-A nd type IIb (111)-oriented bulk diamond substrates. An 8.5-μm thick i-layer demonstrated a blocking voltage>1kV for the (100)-oriented diamond sample without any mesa isolation, passivation, or edge termination structures. PIN diodes with a 530nm thick drift region, on the (111)-sample, demonstrated a blocking voltage of 207V at a current level of 1A/cm2 with a corresponding blocking electric field of 3.9MV/cm. A deep ultraviolet light emission was observed only in (111)-diodes under forward bias, confirming well-behaved p-n junction characteristics in (111) as compared to (100).
- p-i-n diodes
- power semiconductor devices
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering