High Voltage Diodes in Diamond Using (100)-A nd (111)-Substrates

Maitreya Dutta; Franz A.M. Koeck; Wenwen Li; Robert Nemanich; Srabanti Chowdhury

doi:10.1109/LED.2017.2681058

High Voltage Diodes in Diamond Using (100)-A nd (111)-Substrates

Maitreya Dutta, Franz A.M. Koeck, Wenwen Li, Robert Nemanich, Srabanti Chowdhury

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

We present a comparative study of PIN structures in diamond on type IIa (100)-A nd type IIb (111)-oriented bulk diamond substrates. An 8.5-μm thick i-layer demonstrated a blocking voltage>1kV for the (100)-oriented diamond sample without any mesa isolation, passivation, or edge termination structures. PIN diodes with a 530nm thick drift region, on the (111)-sample, demonstrated a blocking voltage of 207V at a current level of 1A/cm² with a corresponding blocking electric field of 3.9MV/cm. A deep ultraviolet light emission was observed only in (111)-diodes under forward bias, confirming well-behaved p-n junction characteristics in (111) as compared to (100).

Original language	English (US)
Article number	7875438
Pages (from-to)	600-603
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	38
Issue number	5
DOIs	https://doi.org/10.1109/LED.2017.2681058
State	Published - May 2017

Keywords

Diamond
p-i-n diodes
power semiconductor devices

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2017.2681058

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title = "High Voltage Diodes in Diamond Using (100)-A nd (111)-Substrates",

abstract = "We present a comparative study of PIN structures in diamond on type IIa (100)-A nd type IIb (111)-oriented bulk diamond substrates. An 8.5-μm thick i-layer demonstrated a blocking voltage>1kV for the (100)-oriented diamond sample without any mesa isolation, passivation, or edge termination structures. PIN diodes with a 530nm thick drift region, on the (111)-sample, demonstrated a blocking voltage of 207V at a current level of 1A/cm2 with a corresponding blocking electric field of 3.9MV/cm. A deep ultraviolet light emission was observed only in (111)-diodes under forward bias, confirming well-behaved p-n junction characteristics in (111) as compared to (100).",

keywords = "Diamond, p-i-n diodes, power semiconductor devices",

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AU - Dutta, Maitreya

AU - Koeck, Franz A.M.

AU - Li, Wenwen

AU - Nemanich, Robert

AU - Chowdhury, Srabanti

PY - 2017/5

Y1 - 2017/5

N2 - We present a comparative study of PIN structures in diamond on type IIa (100)-A nd type IIb (111)-oriented bulk diamond substrates. An 8.5-μm thick i-layer demonstrated a blocking voltage>1kV for the (100)-oriented diamond sample without any mesa isolation, passivation, or edge termination structures. PIN diodes with a 530nm thick drift region, on the (111)-sample, demonstrated a blocking voltage of 207V at a current level of 1A/cm2 with a corresponding blocking electric field of 3.9MV/cm. A deep ultraviolet light emission was observed only in (111)-diodes under forward bias, confirming well-behaved p-n junction characteristics in (111) as compared to (100).

AB - We present a comparative study of PIN structures in diamond on type IIa (100)-A nd type IIb (111)-oriented bulk diamond substrates. An 8.5-μm thick i-layer demonstrated a blocking voltage>1kV for the (100)-oriented diamond sample without any mesa isolation, passivation, or edge termination structures. PIN diodes with a 530nm thick drift region, on the (111)-sample, demonstrated a blocking voltage of 207V at a current level of 1A/cm2 with a corresponding blocking electric field of 3.9MV/cm. A deep ultraviolet light emission was observed only in (111)-diodes under forward bias, confirming well-behaved p-n junction characteristics in (111) as compared to (100).

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KW - p-i-n diodes

KW - power semiconductor devices

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High Voltage Diodes in Diamond Using (100)-A nd (111)-Substrates

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