High Voltage Diodes in Diamond Using (100)-A nd (111)-Substrates

Maitreya Dutta, Franz A.M. Koeck, Wenwen Li, Robert Nemanich, Srabanti Chowdhury

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We present a comparative study of PIN structures in diamond on type IIa (100)-A nd type IIb (111)-oriented bulk diamond substrates. An 8.5-μm thick i-layer demonstrated a blocking voltage>1kV for the (100)-oriented diamond sample without any mesa isolation, passivation, or edge termination structures. PIN diodes with a 530nm thick drift region, on the (111)-sample, demonstrated a blocking voltage of 207V at a current level of 1A/cm2 with a corresponding blocking electric field of 3.9MV/cm. A deep ultraviolet light emission was observed only in (111)-diodes under forward bias, confirming well-behaved p-n junction characteristics in (111) as compared to (100).

Original languageEnglish (US)
Article number7875438
Pages (from-to)600-603
Number of pages4
JournalIEEE Electron Device Letters
Volume38
Issue number5
DOIs
StatePublished - May 1 2017

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Diamond
Diamonds
Diodes
Electric potential
Substrates
Light emission
Passivation
Electric fields

Keywords

  • Diamond
  • p-i-n diodes
  • power semiconductor devices

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

High Voltage Diodes in Diamond Using (100)-A nd (111)-Substrates. / Dutta, Maitreya; Koeck, Franz A.M.; Li, Wenwen; Nemanich, Robert; Chowdhury, Srabanti.

In: IEEE Electron Device Letters, Vol. 38, No. 5, 7875438, 01.05.2017, p. 600-603.

Research output: Contribution to journalArticle

Dutta, Maitreya ; Koeck, Franz A.M. ; Li, Wenwen ; Nemanich, Robert ; Chowdhury, Srabanti. / High Voltage Diodes in Diamond Using (100)-A nd (111)-Substrates. In: IEEE Electron Device Letters. 2017 ; Vol. 38, No. 5. pp. 600-603.
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