High-voltage CMOS compatible SOI MESFET characterization and spice model extraction

Asha Balijepalli, Joseph Ervin, Punarvasu Joshi, Jinman Yang, Yu Cao, Trevor Thornton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

A mature and well-established SOI CMOS process has been used to fabricate metal-semiconductor field-effect transistors (MESFETs) that operate in the gigahertz range. These 0.6μm depletion-mode SOI MESFETs exhibit a maximum breakdown voltage of 45V in spite of being fabricated using the standard 3.3V CMOS process. This high voltage capability makes the device a strong contender for applications such as power amplifiers, voltage controlled oscillators and DC-DC converters. DC and RF characterization involving breakdown voltage measurements, S-parameter measurements and small-signal parameter extraction was conducted on the device. We have customized an advanced, commercially available TOM3 SPICE MESFET model to represent the SOI MESFET. Based on extracted small-signal parameters, a simplified method to extract the charge parameters of the TOM3 capacitance model was developed. A diode subcircuit has been proposed to model the breakdown mechanism in the SOI MESFET.

Original languageEnglish (US)
Title of host publicationIEEE MTT-S International Microwave Symposium Digest
Pages1335-1338
Number of pages4
DOIs
StatePublished - 2006
Event2006 IEEE MTT-S International Microwave Symposium Digest - San Francisco, CA, United States
Duration: Jun 11 2006Jun 16 2006

Other

Other2006 IEEE MTT-S International Microwave Symposium Digest
CountryUnited States
CitySan Francisco, CA
Period6/11/066/16/06

Keywords

  • Electric breakdown
  • MESFETs
  • Silicon on insulator technology
  • SPICE

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • Cite this

    Balijepalli, A., Ervin, J., Joshi, P., Yang, J., Cao, Y., & Thornton, T. (2006). High-voltage CMOS compatible SOI MESFET characterization and spice model extraction. In IEEE MTT-S International Microwave Symposium Digest (pp. 1335-1338). [4015171] https://doi.org/10.1109/MWSYM.2006.249495