High-Transconductance P-Channel Algaas/Gaas Hfet's with Low-Energy Beryllium and Fluorine Co-Implantation Self-Alignment

Richard A. Kiehl, P. E. Hallali, J. Yates, Mike A. Tischler, R. M. Potemski, F. Cardone

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

The fabrication and electrical characteristics of p-channel AlGaAs/GaAs heterostructure FET's with self-aligned p+ source-drain regions formed by low-energy co-implantation of Be and F are reported. The devices utilize a sidewall-assisted refractory gate process and are fabricated on an undoped AlGaAs/GaAs heterostructure grown by MOVPE. Compared with Be implantation alone, the co-implantation of F+ at 8 keV with 2 x 1014 ions/cm2 results in a 3 X increase in the post-anneal Be concentration near the surface for a Be + implantation at 15 keV with 4 x 1014 ions/cm2. It is shown that co-implantation permits a low source resistance to be obtained with shallow p+ source-drain regions. Although short-channel effects must be further reduced at small gate lengths, the electrical characteristics are otherwise excellent and show a 77-K transconductance as high as 207 mS/mm for a 0.5-μm gate length, representing the highest value reported for any GaAs-based p-FET.

Original languageEnglish (US)
Pages (from-to)530-532
Number of pages3
JournalIEEE Electron Device Letters
Volume12
Issue number10
DOIs
StatePublished - Oct 1991
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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