Abstract

We have investigated the effect of anneal time on the performance and temperature-dependent stability of low-temperature-fabricated (180 °C) hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) on flexible substrates. For TFTs annealed for 48 h, the subthreshold slope and off-current were reduced by a factor of ∼3 and by two orders of magnitude, respectively, when compared to unannealed TFTs. Furthermore, longer annealed TFTs showed a significant improvement in their stability when compared to unannealed TFTs. The lifetime values for the 48- and 96-h-annealed TFTs improved by a factor of ∼3 compared to unannealed TFTs when the threshold voltage shift is extrapolated to 10 V. Stability at high temperatures with better lifetimes for the longer annealed TFTs is due to improvement in the a-Si:H/SiNx interface quality by the reduction of trapped charges inside the insulator. For all the TFTs at a positive gate bias, ΔVt follows a power law dependence with time, indicating state creation. A low β value (0.6 for unannealed TFTs to 0.37 for 96-h-annealed TFTs) indicates a good-quality a-Si:H channel and/or the a-Si:H/insulator interface after longer anneals.

Original languageEnglish (US)
Article number5582273
Pages (from-to)3006-3011
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume57
Issue number11
DOIs
StatePublished - Nov 1 2010

Keywords

  • a-Si:H
  • flexible electronics
  • low temperature annealing

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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