Abstract
The first results pertaining to the fabrication of high-temperature rectifying contacts using heteroepitaxial Ni films deposited on natural p-type semiconducting diamond substrates are reported. The contact diodes were deposited at 500°C by the thermal evaporation of Ni from a W filament in ultra-high vacuum. The epitaxial nature of the deposited Ni layers has been established from an inspection of in situ low-energy electron diffraction (LEED) patterns. The Ni films exhibit excellent adhesion properties with the underlying diamond substrate. As evidenced by current-voltage (I-V) measurements stable rectifying characteristics for the Ni/diamond contacts were observed in the 25-400°C temperature range.
Original language | English (US) |
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Pages (from-to) | L1409-L1411 |
Journal | Japanese Journal of Applied Physics |
Volume | 30 |
Issue number | 8 |
DOIs | |
State | Published - Aug 1991 |
Externally published | Yes |
Keywords
- Heteroepitaxy
- High-temperature rectifying contacts
- Nickel/diamond interface
- Semiconducting diamond
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)