High temperature rectifying contacts using heteroepitaxial Ni films on semiconducting diamond

T. P. Humphreys, J. V. LaBrasca, Robert Nemanich, K. Das, J. B. Posthill

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

The first results pertaining to the fabrication of high-temperature rectifying contacts using heteroepitaxial Ni films deposited on natural p-type semiconducting diamond substrates are reported. The contact diodes were deposited at 500°C by the thermal evaporation of Ni from a W filament in ultra-high vacuum. The epitaxial nature of the deposited Ni layers has been established from an inspection of in situ low-energy electron diffraction (LEED) patterns. The Ni films exhibit excellent adhesion properties with the underlying diamond substrate. As evidenced by current-voltage (I-V) measurements stable rectifying characteristics for the Ni/diamond contacts were observed in the 25-400°C temperature range.

Original languageEnglish (US)
Pages (from-to)1409-1411
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume30
Issue number8 A
StatePublished - Aug 1 1991
Externally publishedYes

Fingerprint

Semiconducting diamonds
Diamonds
diamonds
Thermal evaporation
Low energy electron diffraction
Ultrahigh vacuum
Substrates
Diffraction patterns
Diodes
Adhesion
Inspection
Fabrication
Temperature
ultrahigh vacuum
inspection
filaments
Electric potential
adhesion
diffraction patterns
electron diffraction

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

High temperature rectifying contacts using heteroepitaxial Ni films on semiconducting diamond. / Humphreys, T. P.; LaBrasca, J. V.; Nemanich, Robert; Das, K.; Posthill, J. B.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 30, No. 8 A, 01.08.1991, p. 1409-1411.

Research output: Contribution to journalArticle

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