High temperature rectifying contacts using heteroepitaxial ni films on semiconducting diamond

T. P. Humphreys; J. V. Labrasca; R. J. Nemanich; K. Das; J. B. Posthill

doi:10.1143/JJAP.30.L1409

High temperature rectifying contacts using heteroepitaxial ni films on semiconducting diamond

T. P. Humphreys, J. V. Labrasca, R. J. Nemanich, K. Das, J. B. Posthill

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

The first results pertaining to the fabrication of high-temperature rectifying contacts using heteroepitaxial Ni films deposited on natural p-type semiconducting diamond substrates are reported. The contact diodes were deposited at 500°C by the thermal evaporation of Ni from a W filament in ultra-high vacuum. The epitaxial nature of the deposited Ni layers has been established from an inspection of in situ low-energy electron diffraction (LEED) patterns. The Ni films exhibit excellent adhesion properties with the underlying diamond substrate. As evidenced by current-voltage (I-V) measurements stable rectifying characteristics for the Ni/diamond contacts were observed in the 25-400°C temperature range.

Original language	English (US)
Pages (from-to)	L1409-L1411
Journal	Japanese Journal of Applied Physics
Volume	30
Issue number	8
DOIs	https://doi.org/10.1143/JJAP.30.L1409
State	Published - Aug 1991
Externally published	Yes

Keywords

Heteroepitaxy
High-temperature rectifying contacts
Nickel/diamond interface
Semiconducting diamond

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.30.L1409

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title = "High temperature rectifying contacts using heteroepitaxial ni films on semiconducting diamond",

abstract = "The first results pertaining to the fabrication of high-temperature rectifying contacts using heteroepitaxial Ni films deposited on natural p-type semiconducting diamond substrates are reported. The contact diodes were deposited at 500°C by the thermal evaporation of Ni from a W filament in ultra-high vacuum. The epitaxial nature of the deposited Ni layers has been established from an inspection of in situ low-energy electron diffraction (LEED) patterns. The Ni films exhibit excellent adhesion properties with the underlying diamond substrate. As evidenced by current-voltage (I-V) measurements stable rectifying characteristics for the Ni/diamond contacts were observed in the 25-400°C temperature range.",

keywords = "Heteroepitaxy, High-temperature rectifying contacts, Nickel/diamond interface, Semiconducting diamond",

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year = "1991",

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AU - Humphreys, T. P.

AU - Labrasca, J. V.

AU - Nemanich, R. J.

AU - Das, K.

AU - Posthill, J. B.

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AB - The first results pertaining to the fabrication of high-temperature rectifying contacts using heteroepitaxial Ni films deposited on natural p-type semiconducting diamond substrates are reported. The contact diodes were deposited at 500°C by the thermal evaporation of Ni from a W filament in ultra-high vacuum. The epitaxial nature of the deposited Ni layers has been established from an inspection of in situ low-energy electron diffraction (LEED) patterns. The Ni films exhibit excellent adhesion properties with the underlying diamond substrate. As evidenced by current-voltage (I-V) measurements stable rectifying characteristics for the Ni/diamond contacts were observed in the 25-400°C temperature range.

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