High temperature rectifying contacts using heteroepitaxial ni films on semiconducting diamond

T. P. Humphreys, J. V. Labrasca, R. J. Nemanich, K. Das, J. B. Posthill

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24 Scopus citations


The first results pertaining to the fabrication of high-temperature rectifying contacts using heteroepitaxial Ni films deposited on natural p-type semiconducting diamond substrates are reported. The contact diodes were deposited at 500°C by the thermal evaporation of Ni from a W filament in ultra-high vacuum. The epitaxial nature of the deposited Ni layers has been established from an inspection of in situ low-energy electron diffraction (LEED) patterns. The Ni films exhibit excellent adhesion properties with the underlying diamond substrate. As evidenced by current-voltage (I-V) measurements stable rectifying characteristics for the Ni/diamond contacts were observed in the 25-400°C temperature range.

Original languageEnglish (US)
Pages (from-to)L1409-L1411
JournalJapanese Journal of Applied Physics
Issue number8
StatePublished - Aug 1991



  • Heteroepitaxy
  • High-temperature rectifying contacts
  • Nickel/diamond interface
  • Semiconducting diamond

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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