Abstract
The first results pertaining to the fabrication of high-temperature rectifying contacts using heteroepitaxial Ni films deposited on natural p-type semiconducting diamond substrates are reported. The contact diodes were deposited at 500°C by the thermal evaporation of Ni from a W filament in ultra-high vacuum. The epitaxial nature of the deposited Ni layers has been established from an inspection of in situ low-energy electron diffraction (LEED) patterns. The Ni films exhibit excellent adhesion properties with the underlying diamond substrate. As evidenced by current-voltage (I-V) measurements stable rectifying characteristics for the Ni/diamond contacts were observed in the 25-400°C temperature range.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1409-1411 |
| Number of pages | 3 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 30 |
| Issue number | 8 A |
| State | Published - Aug 1 1991 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
High temperature rectifying contacts using heteroepitaxial Ni films on semiconducting diamond. / Humphreys, T. P.; LaBrasca, J. V.; Nemanich, Robert; Das, K.; Posthill, J. B.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 30, No. 8 A, 01.08.1991, p. 1409-1411.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - High temperature rectifying contacts using heteroepitaxial Ni films on semiconducting diamond
AU - Humphreys, T. P.
AU - LaBrasca, J. V.
AU - Nemanich, Robert
AU - Das, K.
AU - Posthill, J. B.
PY - 1991/8/1
Y1 - 1991/8/1
N2 - The first results pertaining to the fabrication of high-temperature rectifying contacts using heteroepitaxial Ni films deposited on natural p-type semiconducting diamond substrates are reported. The contact diodes were deposited at 500°C by the thermal evaporation of Ni from a W filament in ultra-high vacuum. The epitaxial nature of the deposited Ni layers has been established from an inspection of in situ low-energy electron diffraction (LEED) patterns. The Ni films exhibit excellent adhesion properties with the underlying diamond substrate. As evidenced by current-voltage (I-V) measurements stable rectifying characteristics for the Ni/diamond contacts were observed in the 25-400°C temperature range.
AB - The first results pertaining to the fabrication of high-temperature rectifying contacts using heteroepitaxial Ni films deposited on natural p-type semiconducting diamond substrates are reported. The contact diodes were deposited at 500°C by the thermal evaporation of Ni from a W filament in ultra-high vacuum. The epitaxial nature of the deposited Ni layers has been established from an inspection of in situ low-energy electron diffraction (LEED) patterns. The Ni films exhibit excellent adhesion properties with the underlying diamond substrate. As evidenced by current-voltage (I-V) measurements stable rectifying characteristics for the Ni/diamond contacts were observed in the 25-400°C temperature range.
UR - http://www.scopus.com/inward/record.url?scp=0026206107&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0026206107&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0026206107
VL - 30
SP - 1409
EP - 1411
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 8 A
ER -