Abstract

This work presents TCAD simulation for InGaN solar cell at high temperature. 1J solar cells, n-i-p structure based tunnel junctions and a 2J tandem solar cell are investigated. Tunneling and thermionic emission models are included to assist current to transport through heterointerface. We also introduce a step layer at hetero-interface to relax band offset and polarization, which is more practical compared with Indium composition grading layer for the sake of fabrication. The theoretical conversion efficiency of the best devices can be 30% at 450°C with an incident solar radiation concentration of 200. This proposed solar cell is promising for concentrated solar-power hybrid systems.

Original languageEnglish (US)
Title of host publicationIMAPS 11th International Conference and Exhibition on Device Packaging, DPC 2015
PublisherIMAPS-International Microelectronics and Packaging Society
StatePublished - 2015
EventIMAPS 11th International Conference and Exhibition on Device Packaging, DPC 2015 - Fountain Hills, United States
Duration: Mar 16 2015Mar 19 2015

Other

OtherIMAPS 11th International Conference and Exhibition on Device Packaging, DPC 2015
CountryUnited States
CityFountain Hills
Period3/16/153/19/15

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Fang, Y., Vasileska, D., Honsberg, C., & Goodnick, S. (2015). High temperature InGaN solar cell modeling. In IMAPS 11th International Conference and Exhibition on Device Packaging, DPC 2015 IMAPS-International Microelectronics and Packaging Society.