Abstract

This work presents TCAD simulation for InGaN solar cell at high temperature. 1J solar cells, n-i-p structure based tunnel junctions and a 2J tandem solar cell are investigated. Tunneling and thermionic emission models are included to assist current to transport through hetero-interface. We also introduce a step layer at hetero-interface to relax band offset and polarization, which is more practical compared with Indium composition grading layer for the sake of fabrication. The theoretical conversion efficiency of the best devices can be 30% at 450 °C with an incident solar radiation concentration of 200 suns. This proposed solar cell is promising for concentrated solar-power hybrid systems.

Original languageEnglish (US)
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479979448
DOIs
StatePublished - Dec 14 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: Jun 14 2015Jun 19 2015

Other

Other42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
CountryUnited States
CityNew Orleans
Period6/14/156/19/15

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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    Fang, Y., Vasileska, D., Honsberg, C., & Goodnick, S. (2015). High temperature InGaN solar cell modeling. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 [7356348] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2015.7356348