Abstract

We report temperature-dependent characterization of the electrical and optical properties of GaAs single junction solar cells up to 450 °C. An external quantum efficiency (EQE) of 75% was maintained at temperatures up to 300 °C, with a corresponding increase in the absorption edge as a function of wavelength due to the decrease in band gap with temperature, in agreement with theory. Above 300 °C, the EQE decreased strongly as the temperature was further increased. This drop in EQE resulted in a corresponding decrease in short-circuit current, also observed in the I-V characteristics as a function of temperature. When cooled back to room temperature the short-circuit current nearly fully recovers whereas the open-circuit voltage is found to be irreversibly degraded. The origin of the degradation is discussed. Modeling is used to support the experimental results.

Original languageEnglish (US)
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479979448
DOIs
StatePublished - Dec 14 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: Jun 14 2015Jun 19 2015

Other

Other42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
CountryUnited States
CityNew Orleans
Period6/14/156/19/15

Fingerprint

Solar cells
Quantum efficiency
Short circuit currents
Temperature
Open circuit voltage
gallium arsenide
Electric properties
Energy gap
Optical properties
Degradation
Wavelength

Keywords

  • current-voltage
  • GaAs
  • photovoltaic thermal hybrid solar systems
  • quantum efficiency
  • Space solar cells

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Maros, A., Gangam, S., Fang, Y., Smith, J., Vasileska, D., Goodnick, S., ... Honsberg, C. (2015). High temperature characterization of GaAs single junction solar cells. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 [7356338] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2015.7356338

High temperature characterization of GaAs single junction solar cells. / Maros, Aymeric; Gangam, Srikanth; Fang, Yi; Smith, Justin; Vasileska, Dragica; Goodnick, Stephen; Bertoni, Mariana; Honsberg, Christiana.

2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7356338.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Maros, A, Gangam, S, Fang, Y, Smith, J, Vasileska, D, Goodnick, S, Bertoni, M & Honsberg, C 2015, High temperature characterization of GaAs single junction solar cells. in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015., 7356338, Institute of Electrical and Electronics Engineers Inc., 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States, 6/14/15. https://doi.org/10.1109/PVSC.2015.7356338
Maros A, Gangam S, Fang Y, Smith J, Vasileska D, Goodnick S et al. High temperature characterization of GaAs single junction solar cells. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7356338 https://doi.org/10.1109/PVSC.2015.7356338
Maros, Aymeric ; Gangam, Srikanth ; Fang, Yi ; Smith, Justin ; Vasileska, Dragica ; Goodnick, Stephen ; Bertoni, Mariana ; Honsberg, Christiana. / High temperature characterization of GaAs single junction solar cells. 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015.
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