@inproceedings{fe7c0d9233594f81b1fe810a5bfb3b96,
title = "High-speed, low-voltage complementary heterostructure FET circuit technology",
abstract = "A III-V complementary heterostructure FET circuit technology which offers high-speed at low supply voltages has been demonstrated. This circuit technology is based on the vertical integration of p-channel quantum-well FETs with n-channel FETs fabricated in the underlying layers of a single-growth AlGaAs/GaAs structure. Key features of the p-FET heterostructure design and fabrication technology are discussed, and results on the electrical characteristics and the performance of high-speed ring oscillator circuits are presented. Delays of 144 and 59 ps are obtained in 0.8 and 0.5 μm gate-length circuits at a 1.25 V supply, which are the fastest speeds yet reported for room-temperature complementary heterostructure FET circuits at low supply voltages.",
author = "Kiehl, {R. A.} and J. Yates and Palmateer, {L. F.} and Wright, {S. L.} and Frank, {D. J.} and Jackson, {T. N.} and Degelormo, {J. F.} and Fleischman, {A. J.}",
year = "1992",
month = jan,
day = "1",
language = "English (US)",
isbn = "078030196X",
series = "Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)",
publisher = "Publ by IEEE",
pages = "101--104",
booktitle = "Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)",
note = "13th Annual GaAs IC Symposium Technical Digest ; Conference date: 20-10-1991 Through 23-10-1991",
}