High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells

K. Gelžinyte; R. Ivanov; S. Marcinkevičius; Y. Zhao; D. L. Becerra; S. Nakamura; S. P. Denbaars; J. S. Speck

doi:10.1063/1.4905854

High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells

K. Gelžinyte, R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. Denbaars, J. S. Speck

Electrical, Computer, and Energy Engineering, School of (IAFSE-ECEE)

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

Scanning near-field optical spectroscopy was applied to study spatial variations of emission spectra at room temperature in semipolar (202¯1) In_xGa_1-xN/GaN single quantum wells (QWs) for 0.11≤x≤0.36. Photoluminescence (PL) was found to be highly uniform, with peak wavelength deviations and peak intensity deviations divided by average values in the range of 6-12 meV and 0.03-0.07, respectively. Near-field maps of PL parameters showed large, ∼5 to 10 μm size areas of similar values, as opposed to 100 nm scale variations, often reported for InGaN QWs. The near-field PL spectra were found to broaden with increasing InN molar fraction. In the low In content QWs, the broadening is primarily determined by the random cation distribution, while for larger InN molar fractions 10 nm scale localization sites with increasingly deeper band potentials are suggested as the linewidth broadening cause.

Original language	English (US)
Article number	023111
Journal	Journal of Applied Physics
Volume	117
Issue number	2
DOIs	https://doi.org/10.1063/1.4905854
State	Published - Jan 14 2015

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.4905854

Cite this

@article{f574aaaa9f764a5480feb2dde60d0969,

title = "High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells",

abstract = "Scanning near-field optical spectroscopy was applied to study spatial variations of emission spectra at room temperature in semipolar (202¯1) InxGa1-xN/GaN single quantum wells (QWs) for 0.11≤x≤0.36. Photoluminescence (PL) was found to be highly uniform, with peak wavelength deviations and peak intensity deviations divided by average values in the range of 6-12 meV and 0.03-0.07, respectively. Near-field maps of PL parameters showed large, ∼5 to 10 μm size areas of similar values, as opposed to 100 nm scale variations, often reported for InGaN QWs. The near-field PL spectra were found to broaden with increasing InN molar fraction. In the low In content QWs, the broadening is primarily determined by the random cation distribution, while for larger InN molar fractions 10 nm scale localization sites with increasingly deeper band potentials are suggested as the linewidth broadening cause.",

author = "K. Gel{\v z}inyte and R. Ivanov and S. Marcinkevi{\v c}ius and Y. Zhao and Becerra, {D. L.} and S. Nakamura and Denbaars, {S. P.} and Speck, {J. S.}",

note = "Publisher Copyright: {\textcopyright} 2015 AIP Publishing LLC.",

year = "2015",

month = jan,

day = "14",

doi = "10.1063/1.4905854",

language = "English (US)",

volume = "117",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "2",

}

TY - JOUR

T1 - High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells

AU - Gelžinyte, K.

AU - Ivanov, R.

AU - Marcinkevičius, S.

AU - Zhao, Y.

AU - Becerra, D. L.

AU - Nakamura, S.

AU - Denbaars, S. P.

AU - Speck, J. S.

PY - 2015/1/14

Y1 - 2015/1/14

N2 - Scanning near-field optical spectroscopy was applied to study spatial variations of emission spectra at room temperature in semipolar (202¯1) InxGa1-xN/GaN single quantum wells (QWs) for 0.11≤x≤0.36. Photoluminescence (PL) was found to be highly uniform, with peak wavelength deviations and peak intensity deviations divided by average values in the range of 6-12 meV and 0.03-0.07, respectively. Near-field maps of PL parameters showed large, ∼5 to 10 μm size areas of similar values, as opposed to 100 nm scale variations, often reported for InGaN QWs. The near-field PL spectra were found to broaden with increasing InN molar fraction. In the low In content QWs, the broadening is primarily determined by the random cation distribution, while for larger InN molar fractions 10 nm scale localization sites with increasingly deeper band potentials are suggested as the linewidth broadening cause.

AB - Scanning near-field optical spectroscopy was applied to study spatial variations of emission spectra at room temperature in semipolar (202¯1) InxGa1-xN/GaN single quantum wells (QWs) for 0.11≤x≤0.36. Photoluminescence (PL) was found to be highly uniform, with peak wavelength deviations and peak intensity deviations divided by average values in the range of 6-12 meV and 0.03-0.07, respectively. Near-field maps of PL parameters showed large, ∼5 to 10 μm size areas of similar values, as opposed to 100 nm scale variations, often reported for InGaN QWs. The near-field PL spectra were found to broaden with increasing InN molar fraction. In the low In content QWs, the broadening is primarily determined by the random cation distribution, while for larger InN molar fractions 10 nm scale localization sites with increasingly deeper band potentials are suggested as the linewidth broadening cause.

UR - http://www.scopus.com/inward/record.url?scp=84923666851&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84923666851&partnerID=8YFLogxK

U2 - 10.1063/1.4905854

DO - 10.1063/1.4905854

M3 - Article

AN - SCOPUS:84923666851

SN - 0021-8979

VL - 117

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

M1 - 023111

ER -

High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this