@inproceedings{5b40017abef146f0ae5a577b98a86dfd,
title = "High spatial resolution tem study of thin film metal/6h-SIC interfaces",
abstract = "Thin films of titanium, platinum, and hafnium were deposited on single crystal n-type, (0001) 6H-SiC at room temperature in UHV. Microstructure and chemistry of their interfaces were analyzed by high spatial resolution TEM imaging and spectroscopy. Ti5Si3 and TiC were the two phases found in the reaction zone of Ti/SiC specimens annealed at 700°C. A carbon-containing amorphous layer formed between Pt and SiC when the annealing temperature went up to 750°C. There was no apparent reaction zone in Hf/SiC specimens annealed at 700°C for 60 min.. The change of electrical properties of metal/6H-SiC devices was attributed to these new product phases.",
author = "Bow, {J. S.} and Porter, {L. M.} and Kim, {M. J.} and Ray Carpenter and Davis, {R. F.}",
year = "1993",
language = "English (US)",
isbn = "1558991751",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "571--576",
editor = "Atwater, {Harry A.} and Eric Chason and Grabow, {Marcia H.} and Lagally, {Max G.}",
booktitle = "Evolution of Surface and Thin Film Microstructure",
note = "Proceedings of the 1992 Fall Meeting of the Materials Research Society ; Conference date: 30-11-1992 Through 04-12-1992",
}