HIGH RESOLUTION Z-CONTRAST IMAGING AND LATTICE LOCATION ANALYSIS OF DOPANTS IN ION-IMPLANTED SILICON.

S. J. Pennycook; J. Narayan; R. J. Culbertson; E. Fogarassy

HIGH RESOLUTION Z-CONTRAST IMAGING AND LATTICE LOCATION ANALYSIS OF DOPANTS IN ION-IMPLANTED SILICON.

S. J. Pennycook, J. Narayan, R. J. Culbertson, E. Fogarassy

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Two new electron microscopy techniques have been developed which greatly extend the capabilities for the micro-characterization of semiconductors. The first is a technique for the direct imaging of dopants in semiconductors, whether or not they are in solution, using Z-contrast, and the second is a technique for determining the substitutional fraction of dopant. Both techniques are capable of nanometer spatial resolution and allow the detailed study of dopant segregation, precipitation, and clustering effects.

Original language	English (US)
Title of host publication	Materials Research Society Symposia Proceedings
Editors	J.B. Roberto, R.W. Carpenter, M.C. Wittels
Publisher	Materials Research Soc
Pages	287-294
Number of pages	8
ISBN (Print)	0931837065
State	Published - Dec 1 1985
Externally published	Yes

Publication series

Name	Materials Research Society Symposia Proceedings
Volume	41
ISSN (Print)	0272-9172

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Pennycook, S. J., Narayan, J., Culbertson, R. J., & Fogarassy, E. (1985). HIGH RESOLUTION Z-CONTRAST IMAGING AND LATTICE LOCATION ANALYSIS OF DOPANTS IN ION-IMPLANTED SILICON. In J. B. Roberto, R. W. Carpenter, & M. C. Wittels (Eds.), Materials Research Society Symposia Proceedings (pp. 287-294). (Materials Research Society Symposia Proceedings; Vol. 41). Materials Research Soc.

HIGH RESOLUTION Z-CONTRAST IMAGING AND LATTICE LOCATION ANALYSIS OF DOPANTS IN ION-IMPLANTED SILICON. / Pennycook, S. J.; Narayan, J.; Culbertson, R. J. et al.
Materials Research Society Symposia Proceedings. ed. / J.B. Roberto; R.W. Carpenter; M.C. Wittels. Materials Research Soc, 1985. p. 287-294 (Materials Research Society Symposia Proceedings; Vol. 41).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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HIGH RESOLUTION Z-CONTRAST IMAGING AND LATTICE LOCATION ANALYSIS OF DOPANTS IN ION-IMPLANTED SILICON.

Abstract

Publication series

ASJC Scopus subject areas

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