HIGH RESOLUTION Z-CONTRAST IMAGING AND LATTICE LOCATION ANALYSIS OF DOPANTS IN ION-IMPLANTED SILICON.

S. J. Pennycook, J. Narayan, R. J. Culbertson, E. Fogarassy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Two new electron microscopy techniques have been developed which greatly extend the capabilities for the micro-characterization of semiconductors. The first is a technique for the direct imaging of dopants in semiconductors, whether or not they are in solution, using Z-contrast, and the second is a technique for determining the substitutional fraction of dopant. Both techniques are capable of nanometer spatial resolution and allow the detailed study of dopant segregation, precipitation, and clustering effects.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsJ.B. Roberto, R.W. Carpenter, M.C. Wittels
PublisherMaterials Research Soc
Pages287-294
Number of pages8
ISBN (Print)0931837065
StatePublished - Dec 1 1985

Publication series

NameMaterials Research Society Symposia Proceedings
Volume41
ISSN (Print)0272-9172

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Pennycook, S. J., Narayan, J., Culbertson, R. J., & Fogarassy, E. (1985). HIGH RESOLUTION Z-CONTRAST IMAGING AND LATTICE LOCATION ANALYSIS OF DOPANTS IN ION-IMPLANTED SILICON. In J. B. Roberto, R. W. Carpenter, & M. C. Wittels (Eds.), Materials Research Society Symposia Proceedings (pp. 287-294). (Materials Research Society Symposia Proceedings; Vol. 41). Materials Research Soc.