High-resolution transmission electron microscopy of 60[ddot] dislocations in si-GaAs

D. Gerthsen, F. A. Ponce, G. B. Anderson

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

[110] lattice images of dissociated and undissociated 60[ddot] dislocations in semiinsulating GaAs have been obtained using high-resolution transmission electron microscopy. The majority of dislocations (approximately 80%) observed end-on in the samples which were plastically deformed at 415[ddot]C are dissociated 60[ddot] dislocations, but a significant number of undissociated dislocations were also found. Image simulations were carried out for the 30[ddot] and 90[ddot] partials. It could be shown that dissociated 60[ddot] dislocations are present in the glide set configuration by simulating the 30[ddot] glide and 30[ddot] shuffle set partial and matching simulated and experimental images.

Original languageEnglish (US)
Pages (from-to)1045-1058
Number of pages14
JournalPhilosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Volume59
Issue number5
DOIs
StatePublished - May 1989
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics
  • Physics and Astronomy (miscellaneous)
  • Metals and Alloys

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