Abstract
[110] lattice images of dissociated and undissociated 60[ddot] dislocations in semiinsulating GaAs have been obtained using high-resolution transmission electron microscopy. The majority of dislocations (approximately 80%) observed end-on in the samples which were plastically deformed at 415[ddot]C are dissociated 60[ddot] dislocations, but a significant number of undissociated dislocations were also found. Image simulations were carried out for the 30[ddot] and 90[ddot] partials. It could be shown that dissociated 60[ddot] dislocations are present in the glide set configuration by simulating the 30[ddot] glide and 30[ddot] shuffle set partial and matching simulated and experimental images.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1045-1058 |
| Number of pages | 14 |
| Journal | Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties |
| Volume | 59 |
| Issue number | 5 |
| DOIs | |
| State | Published - May 1989 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- General Materials Science
- Condensed Matter Physics
- Physics and Astronomy (miscellaneous)
- Metals and Alloys