Abstract
High-resolution (< 10 A ̊) and high-quality secondary electron (SE) images can be obtained from specimens in the high-resolution imaging position of a HB5 dedicated STEM instrument, in parallel with STEM or SREM imaging and with microdiffraction and microanalysis using EELS. The additional information obtained by the SEM arises from the possibility of revealing three-dimensional morphology and sensitivity to the chemical composition of surface layers. Examples include evidence of a reaction between Pd and MgO substrate and the formation of Ni by reduction of NiO under electron beam irradiation.
Original language | English (US) |
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Pages (from-to) | 463-472 |
Number of pages | 10 |
Journal | Ultramicroscopy |
Volume | 23 |
Issue number | 3-4 |
DOIs | |
State | Published - 1987 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Instrumentation