Abstract
Whisker/matrix interfaces between β-SiC whiskers and β-Si3N4 or α-Al2O3 matrices in composites were examined by high-resolution electron microscopy (HREM), and electron energy loss (ELS) and energy dispersive X-ray (EDS) spectroscopies. Most whisker/matrix interfaces were crystalline, with whiskers directly bonded to matrix crystals. Some whisker/matrix interface regions contained amorphous thin films and these occurred more often in the Si3N4 composite, which contained sintering additives, than in the Al2O3 matrix composite, which did not. No evidence for light element segregation at crystalline whisker/matrix interfaces was detected by ELS or EDS at 5 nm spatial resolution. Impurities were concentrated in glassy regions in matrix grain boundaries, triple junctions, or at infrequent whisker/matrix interfaces containing amorphous films.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2949-2957 |
| Number of pages | 9 |
| Journal | Journal of Materials Science |
| Volume | 25 |
| Issue number | 6 |
| DOIs | |
| State | Published - Jun 1990 |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
- Materials Science(all)
Cite this
High-resolution interface analysis of SiC-whisker-reinforced Si3N4 and Al2O3 ceramic matrix composites. / Braue, W.; Carpenter, Ray; Smith, David.
In: Journal of Materials Science, Vol. 25, No. 6, 06.1990, p. 2949-2957.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - High-resolution interface analysis of SiC-whisker-reinforced Si3N4 and Al2O3 ceramic matrix composites
AU - Braue, W.
AU - Carpenter, Ray
AU - Smith, David
PY - 1990/6
Y1 - 1990/6
N2 - Whisker/matrix interfaces between β-SiC whiskers and β-Si3N4 or α-Al2O3 matrices in composites were examined by high-resolution electron microscopy (HREM), and electron energy loss (ELS) and energy dispersive X-ray (EDS) spectroscopies. Most whisker/matrix interfaces were crystalline, with whiskers directly bonded to matrix crystals. Some whisker/matrix interface regions contained amorphous thin films and these occurred more often in the Si3N4 composite, which contained sintering additives, than in the Al2O3 matrix composite, which did not. No evidence for light element segregation at crystalline whisker/matrix interfaces was detected by ELS or EDS at 5 nm spatial resolution. Impurities were concentrated in glassy regions in matrix grain boundaries, triple junctions, or at infrequent whisker/matrix interfaces containing amorphous films.
AB - Whisker/matrix interfaces between β-SiC whiskers and β-Si3N4 or α-Al2O3 matrices in composites were examined by high-resolution electron microscopy (HREM), and electron energy loss (ELS) and energy dispersive X-ray (EDS) spectroscopies. Most whisker/matrix interfaces were crystalline, with whiskers directly bonded to matrix crystals. Some whisker/matrix interface regions contained amorphous thin films and these occurred more often in the Si3N4 composite, which contained sintering additives, than in the Al2O3 matrix composite, which did not. No evidence for light element segregation at crystalline whisker/matrix interfaces was detected by ELS or EDS at 5 nm spatial resolution. Impurities were concentrated in glassy regions in matrix grain boundaries, triple junctions, or at infrequent whisker/matrix interfaces containing amorphous films.
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UR - http://www.scopus.com/inward/citedby.url?scp=0025447005&partnerID=8YFLogxK
U2 - 10.1007/BF00584910
DO - 10.1007/BF00584910
M3 - Article
AN - SCOPUS:0025447005
VL - 25
SP - 2949
EP - 2957
JO - Journal of Materials Science
JF - Journal of Materials Science
SN - 0022-2461
IS - 6
ER -