Abstract
We report the observation of ordering in Al0.3Ga0.7N as part of an epitaxial lateral overgrowth (ELO) of GaN carried out using (1 1 2̄ 2) GaN templates grown by metal-organic chemical vapor deposition on m-plane sapphire. Transmission electron microscopy showed that the crystalline quality of the ELO GaN was greatly improved when the ELO SiO2 mask was patterned along the [1 1 2̄ 0]sapphire direction. The ELO GaN wings had an inclined columnar shape with smooth (0 0 0 1) and (1 1 2̄ 0) facets. Layers of 1:1 [0 0 0 1] ordered a-plane Al0.3Ga0.7N were observed on the a-plane GaN facets by high-resolution transmission electron microscopy and high-angle annular-dark-field scanning transmission electron microscopy. However, no ordering was observed for c-plane Al0.3Ga0.7N layers grown at the same time on the c-plane GaN facets.
Original language | English (US) |
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Pages (from-to) | 4162-4166 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 311 |
Issue number | 17 |
DOIs | |
State | Published - Aug 15 2009 |
Keywords
- A1. Characterization
- A3. Metal-organic chemical vapor deposition
- B1. Nitrides
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry