High-resolution imaging of 1:1 [0 0 0 1] ordered a-plane Al0.3Ga0.7N

Lin Zhou, X. Ni, Ü Özgür, H. Morkoç, David Smith

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

We report the observation of ordering in Al0.3Ga0.7N as part of an epitaxial lateral overgrowth (ELO) of GaN carried out using (1 1 2̄ 2) GaN templates grown by metal-organic chemical vapor deposition on m-plane sapphire. Transmission electron microscopy showed that the crystalline quality of the ELO GaN was greatly improved when the ELO SiO2 mask was patterned along the [1 1 2̄ 0]sapphire direction. The ELO GaN wings had an inclined columnar shape with smooth (0 0 0 1) and (1 1 2̄ 0) facets. Layers of 1:1 [0 0 0 1] ordered a-plane Al0.3Ga0.7N were observed on the a-plane GaN facets by high-resolution transmission electron microscopy and high-angle annular-dark-field scanning transmission electron microscopy. However, no ordering was observed for c-plane Al0.3Ga0.7N layers grown at the same time on the c-plane GaN facets.

Original languageEnglish (US)
Pages (from-to)4162-4166
Number of pages5
JournalJournal of Crystal Growth
Volume311
Issue number17
DOIs
StatePublished - Aug 15 2009

Keywords

  • A1. Characterization
  • A3. Metal-organic chemical vapor deposition
  • B1. Nitrides

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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