High-resolution imaging of 1:1 [0 0 0 1] ordered a-plane Al0.3Ga0.7N

Lin Zhou; X. Ni; Ü Özgür; H. Morkoç; David Smith

doi:10.1016/j.jcrysgro.2009.07.016

High-resolution imaging of 1:1 [0 0 0 1] ordered a-plane Al_0.3Ga_0.7N

Lin Zhou, X. Ni, Ü Özgür, H. Morkoç, David Smith

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We report the observation of ordering in Al_0.3Ga_0.7N as part of an epitaxial lateral overgrowth (ELO) of GaN carried out using (1 1 2̄ 2) GaN templates grown by metal-organic chemical vapor deposition on m-plane sapphire. Transmission electron microscopy showed that the crystalline quality of the ELO GaN was greatly improved when the ELO SiO₂ mask was patterned along the [1 1 2̄ 0]_sapphire direction. The ELO GaN wings had an inclined columnar shape with smooth (0 0 0 1) and (1 1 2̄ 0) facets. Layers of 1:1 [0 0 0 1] ordered a-plane Al_0.3Ga_0.7N were observed on the a-plane GaN facets by high-resolution transmission electron microscopy and high-angle annular-dark-field scanning transmission electron microscopy. However, no ordering was observed for c-plane Al_0.3Ga_0.7N layers grown at the same time on the c-plane GaN facets.

Original language	English (US)
Pages (from-to)	4162-4166
Number of pages	5
Journal	Journal of Crystal Growth
Volume	311
Issue number	17
DOIs	https://doi.org/10.1016/j.jcrysgro.2009.07.016
State	Published - Aug 15 2009

Keywords

A1. Characterization
A3. Metal-organic chemical vapor deposition
B1. Nitrides

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2009.07.016

Cite this

@article{758e31a1fcb74655bac9aac529d7f6e2,

title = "High-resolution imaging of 1:1 [0 0 0 1] ordered a-plane Al0.3Ga0.7N",

abstract = "We report the observation of ordering in Al0.3Ga0.7N as part of an epitaxial lateral overgrowth (ELO) of GaN carried out using (1 1 {\=2} 2) GaN templates grown by metal-organic chemical vapor deposition on m-plane sapphire. Transmission electron microscopy showed that the crystalline quality of the ELO GaN was greatly improved when the ELO SiO2 mask was patterned along the [1 1 {\=2} 0]sapphire direction. The ELO GaN wings had an inclined columnar shape with smooth (0 0 0 1) and (1 1 {\=2} 0) facets. Layers of 1:1 [0 0 0 1] ordered a-plane Al0.3Ga0.7N were observed on the a-plane GaN facets by high-resolution transmission electron microscopy and high-angle annular-dark-field scanning transmission electron microscopy. However, no ordering was observed for c-plane Al0.3Ga0.7N layers grown at the same time on the c-plane GaN facets.",

keywords = "A1. Characterization, A3. Metal-organic chemical vapor deposition, B1. Nitrides",

author = "Lin Zhou and X. Ni and {\"U} {\"O}zg{\"u}r and H. Morko{\c c} and David Smith",

note = "Funding Information: This work was partially supported by ONR Grant N-00014-04-1-0020. The work at Virginia Commonwealth University was supported by the Air Force Office of Scientific Research. We acknowledge use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University",

year = "2009",

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doi = "10.1016/j.jcrysgro.2009.07.016",

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T1 - High-resolution imaging of 1:1 [0 0 0 1] ordered a-plane Al0.3Ga0.7N

AU - Zhou, Lin

AU - Ni, X.

AU - Özgür, Ü

AU - Morkoç, H.

AU - Smith, David

N1 - Funding Information: This work was partially supported by ONR Grant N-00014-04-1-0020. The work at Virginia Commonwealth University was supported by the Air Force Office of Scientific Research. We acknowledge use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University

PY - 2009/8/15

Y1 - 2009/8/15

N2 - We report the observation of ordering in Al0.3Ga0.7N as part of an epitaxial lateral overgrowth (ELO) of GaN carried out using (1 1 2̄ 2) GaN templates grown by metal-organic chemical vapor deposition on m-plane sapphire. Transmission electron microscopy showed that the crystalline quality of the ELO GaN was greatly improved when the ELO SiO2 mask was patterned along the [1 1 2̄ 0]sapphire direction. The ELO GaN wings had an inclined columnar shape with smooth (0 0 0 1) and (1 1 2̄ 0) facets. Layers of 1:1 [0 0 0 1] ordered a-plane Al0.3Ga0.7N were observed on the a-plane GaN facets by high-resolution transmission electron microscopy and high-angle annular-dark-field scanning transmission electron microscopy. However, no ordering was observed for c-plane Al0.3Ga0.7N layers grown at the same time on the c-plane GaN facets.

AB - We report the observation of ordering in Al0.3Ga0.7N as part of an epitaxial lateral overgrowth (ELO) of GaN carried out using (1 1 2̄ 2) GaN templates grown by metal-organic chemical vapor deposition on m-plane sapphire. Transmission electron microscopy showed that the crystalline quality of the ELO GaN was greatly improved when the ELO SiO2 mask was patterned along the [1 1 2̄ 0]sapphire direction. The ELO GaN wings had an inclined columnar shape with smooth (0 0 0 1) and (1 1 2̄ 0) facets. Layers of 1:1 [0 0 0 1] ordered a-plane Al0.3Ga0.7N were observed on the a-plane GaN facets by high-resolution transmission electron microscopy and high-angle annular-dark-field scanning transmission electron microscopy. However, no ordering was observed for c-plane Al0.3Ga0.7N layers grown at the same time on the c-plane GaN facets.

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