2 Citations (Scopus)

Abstract

We report the observation of ordering in Al0.3Ga0.7N as part of an epitaxial lateral overgrowth (ELO) of GaN carried out using (1 1 2̄ 2) GaN templates grown by metal-organic chemical vapor deposition on m-plane sapphire. Transmission electron microscopy showed that the crystalline quality of the ELO GaN was greatly improved when the ELO SiO2 mask was patterned along the [1 1 2̄ 0]sapphire direction. The ELO GaN wings had an inclined columnar shape with smooth (0 0 0 1) and (1 1 2̄ 0) facets. Layers of 1:1 [0 0 0 1] ordered a-plane Al0.3Ga0.7N were observed on the a-plane GaN facets by high-resolution transmission electron microscopy and high-angle annular-dark-field scanning transmission electron microscopy. However, no ordering was observed for c-plane Al0.3Ga0.7N layers grown at the same time on the c-plane GaN facets.

Original languageEnglish (US)
Pages (from-to)4162-4166
Number of pages5
JournalJournal of Crystal Growth
Volume311
Issue number17
DOIs
StatePublished - Aug 15 2009

Fingerprint

Aluminum Oxide
Sapphire
flat surfaces
Transmission electron microscopy
Organic Chemicals
Imaging techniques
transmission electron microscopy
high resolution
Organic chemicals
sapphire
High resolution transmission electron microscopy
Masks
Chemical vapor deposition
Metals
Crystalline materials
wings
Scanning electron microscopy
metalorganic chemical vapor deposition
masks
templates

Keywords

  • A1. Characterization
  • A3. Metal-organic chemical vapor deposition
  • B1. Nitrides

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

High-resolution imaging of 1 : 1 [0 0 0 1] ordered a-plane Al0.3Ga0.7N. / Zhou, Lin; Ni, X.; Özgür, Ü; Morkoç, H.; Smith, David.

In: Journal of Crystal Growth, Vol. 311, No. 17, 15.08.2009, p. 4162-4166.

Research output: Contribution to journalArticle

Zhou, Lin ; Ni, X. ; Özgür, Ü ; Morkoç, H. ; Smith, David. / High-resolution imaging of 1 : 1 [0 0 0 1] ordered a-plane Al0.3Ga0.7N. In: Journal of Crystal Growth. 2009 ; Vol. 311, No. 17. pp. 4162-4166.
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abstract = "We report the observation of ordering in Al0.3Ga0.7N as part of an epitaxial lateral overgrowth (ELO) of GaN carried out using (1 1 2̄ 2) GaN templates grown by metal-organic chemical vapor deposition on m-plane sapphire. Transmission electron microscopy showed that the crystalline quality of the ELO GaN was greatly improved when the ELO SiO2 mask was patterned along the [1 1 2̄ 0]sapphire direction. The ELO GaN wings had an inclined columnar shape with smooth (0 0 0 1) and (1 1 2̄ 0) facets. Layers of 1:1 [0 0 0 1] ordered a-plane Al0.3Ga0.7N were observed on the a-plane GaN facets by high-resolution transmission electron microscopy and high-angle annular-dark-field scanning transmission electron microscopy. However, no ordering was observed for c-plane Al0.3Ga0.7N layers grown at the same time on the c-plane GaN facets.",
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AU - Smith, David

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N2 - We report the observation of ordering in Al0.3Ga0.7N as part of an epitaxial lateral overgrowth (ELO) of GaN carried out using (1 1 2̄ 2) GaN templates grown by metal-organic chemical vapor deposition on m-plane sapphire. Transmission electron microscopy showed that the crystalline quality of the ELO GaN was greatly improved when the ELO SiO2 mask was patterned along the [1 1 2̄ 0]sapphire direction. The ELO GaN wings had an inclined columnar shape with smooth (0 0 0 1) and (1 1 2̄ 0) facets. Layers of 1:1 [0 0 0 1] ordered a-plane Al0.3Ga0.7N were observed on the a-plane GaN facets by high-resolution transmission electron microscopy and high-angle annular-dark-field scanning transmission electron microscopy. However, no ordering was observed for c-plane Al0.3Ga0.7N layers grown at the same time on the c-plane GaN facets.

AB - We report the observation of ordering in Al0.3Ga0.7N as part of an epitaxial lateral overgrowth (ELO) of GaN carried out using (1 1 2̄ 2) GaN templates grown by metal-organic chemical vapor deposition on m-plane sapphire. Transmission electron microscopy showed that the crystalline quality of the ELO GaN was greatly improved when the ELO SiO2 mask was patterned along the [1 1 2̄ 0]sapphire direction. The ELO GaN wings had an inclined columnar shape with smooth (0 0 0 1) and (1 1 2̄ 0) facets. Layers of 1:1 [0 0 0 1] ordered a-plane Al0.3Ga0.7N were observed on the a-plane GaN facets by high-resolution transmission electron microscopy and high-angle annular-dark-field scanning transmission electron microscopy. However, no ordering was observed for c-plane Al0.3Ga0.7N layers grown at the same time on the c-plane GaN facets.

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