Abstract
We report the observation of ordering in Al0.3Ga0.7N as part of an epitaxial lateral overgrowth (ELO) of GaN carried out using (1 1 2̄ 2) GaN templates grown by metal-organic chemical vapor deposition on m-plane sapphire. Transmission electron microscopy showed that the crystalline quality of the ELO GaN was greatly improved when the ELO SiO2 mask was patterned along the [1 1 2̄ 0]sapphire direction. The ELO GaN wings had an inclined columnar shape with smooth (0 0 0 1) and (1 1 2̄ 0) facets. Layers of 1:1 [0 0 0 1] ordered a-plane Al0.3Ga0.7N were observed on the a-plane GaN facets by high-resolution transmission electron microscopy and high-angle annular-dark-field scanning transmission electron microscopy. However, no ordering was observed for c-plane Al0.3Ga0.7N layers grown at the same time on the c-plane GaN facets.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 4162-4166 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 311 |
| Issue number | 17 |
| DOIs | |
| State | Published - Aug 15 2009 |
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Keywords
- A1. Characterization
- A3. Metal-organic chemical vapor deposition
- B1. Nitrides
ASJC Scopus subject areas
- Condensed Matter Physics
- Materials Chemistry
- Inorganic Chemistry
Cite this
High-resolution imaging of 1 : 1 [0 0 0 1] ordered a-plane Al0.3Ga0.7N. / Zhou, Lin; Ni, X.; Özgür, Ü; Morkoç, H.; Smith, David.
In: Journal of Crystal Growth, Vol. 311, No. 17, 15.08.2009, p. 4162-4166.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - High-resolution imaging of 1
T2 - 1 [0 0 0 1] ordered a-plane Al0.3Ga0.7N
AU - Zhou, Lin
AU - Ni, X.
AU - Özgür, Ü
AU - Morkoç, H.
AU - Smith, David
PY - 2009/8/15
Y1 - 2009/8/15
N2 - We report the observation of ordering in Al0.3Ga0.7N as part of an epitaxial lateral overgrowth (ELO) of GaN carried out using (1 1 2̄ 2) GaN templates grown by metal-organic chemical vapor deposition on m-plane sapphire. Transmission electron microscopy showed that the crystalline quality of the ELO GaN was greatly improved when the ELO SiO2 mask was patterned along the [1 1 2̄ 0]sapphire direction. The ELO GaN wings had an inclined columnar shape with smooth (0 0 0 1) and (1 1 2̄ 0) facets. Layers of 1:1 [0 0 0 1] ordered a-plane Al0.3Ga0.7N were observed on the a-plane GaN facets by high-resolution transmission electron microscopy and high-angle annular-dark-field scanning transmission electron microscopy. However, no ordering was observed for c-plane Al0.3Ga0.7N layers grown at the same time on the c-plane GaN facets.
AB - We report the observation of ordering in Al0.3Ga0.7N as part of an epitaxial lateral overgrowth (ELO) of GaN carried out using (1 1 2̄ 2) GaN templates grown by metal-organic chemical vapor deposition on m-plane sapphire. Transmission electron microscopy showed that the crystalline quality of the ELO GaN was greatly improved when the ELO SiO2 mask was patterned along the [1 1 2̄ 0]sapphire direction. The ELO GaN wings had an inclined columnar shape with smooth (0 0 0 1) and (1 1 2̄ 0) facets. Layers of 1:1 [0 0 0 1] ordered a-plane Al0.3Ga0.7N were observed on the a-plane GaN facets by high-resolution transmission electron microscopy and high-angle annular-dark-field scanning transmission electron microscopy. However, no ordering was observed for c-plane Al0.3Ga0.7N layers grown at the same time on the c-plane GaN facets.
KW - A1. Characterization
KW - A3. Metal-organic chemical vapor deposition
KW - B1. Nitrides
UR - http://www.scopus.com/inward/record.url?scp=68549135103&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=68549135103&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2009.07.016
DO - 10.1016/j.jcrysgro.2009.07.016
M3 - Article
AN - SCOPUS:68549135103
VL - 311
SP - 4162
EP - 4166
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 17
ER -