HIGH RESOLUTION ELECTRON MICROSCOPY OF Si-IMPLANTED AND ELECTRON-BEAM ANNEALED SILICON-ON-SAPPHIRE.

David J. Smith, L. A. Freeman, R. A. McMahon, H. Ahmed, M. G. Pitt, T. B. Peters

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations
Original languageEnglish (US)
Title of host publicationInstitute of Physics Conference Series
PublisherInst of Physics
Pages83-88
Number of pages6
Edition67
ISBN (Print)0854981586
StatePublished - Dec 1 1983
Externally publishedYes

Publication series

NameInstitute of Physics Conference Series
Number67
ISSN (Print)0373-0751

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Smith, D. J., Freeman, L. A., McMahon, R. A., Ahmed, H., Pitt, M. G., & Peters, T. B. (1983). HIGH RESOLUTION ELECTRON MICROSCOPY OF Si-IMPLANTED AND ELECTRON-BEAM ANNEALED SILICON-ON-SAPPHIRE. In Institute of Physics Conference Series (67 ed., pp. 83-88). (Institute of Physics Conference Series; No. 67). Inst of Physics.