High quality large-area CdTe(211)B on Si(211) grown by molecular beam epitaxy

S. Rujirawat; L. A. Almeida; Y. P. Chen; S. Sivananthan; David Smith

doi:10.1063/1.119406

High quality large-area CdTe(211)B on Si(211) grown by molecular beam epitaxy

S. Rujirawat, L. A. Almeida, Y. P. Chen, S. Sivananthan, David Smith

Electrical Engineering

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72 Scopus citations

Abstract

We describe the growth of high quality CdTe(211)B layers by molecular beam epitaxy on nominal Si(211) substrates. Prior to CdTe deposition, thin ZnTe(211)B buffer layers were grown to preserve the homo-orientation. Large-area CdTe(211)B layers were routinely obtained by optimizing the growth parameters. From x-ray diffraction, we observed the presence of twin-free CdTe(211)B layers. One 8 μm thick CdTe epilayer had a near-surface etch pit density of 1.5×10⁵ cm^-2, which surpassed the best value reported for CdTe(211)B grown on GaAs(211)B, GaAs/Si(211), or Si(211) substrates.

Original language	English (US)
Pages (from-to)	1810-1812
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	13
DOIs	https://doi.org/10.1063/1.119406
State	Published - Sep 29 1997

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "High quality large-area CdTe(211)B on Si(211) grown by molecular beam epitaxy",

abstract = "We describe the growth of high quality CdTe(211)B layers by molecular beam epitaxy on nominal Si(211) substrates. Prior to CdTe deposition, thin ZnTe(211)B buffer layers were grown to preserve the homo-orientation. Large-area CdTe(211)B layers were routinely obtained by optimizing the growth parameters. From x-ray diffraction, we observed the presence of twin-free CdTe(211)B layers. One 8 μm thick CdTe epilayer had a near-surface etch pit density of 1.5×105 cm-2, which surpassed the best value reported for CdTe(211)B grown on GaAs(211)B, GaAs/Si(211), or Si(211) substrates.",

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T1 - High quality large-area CdTe(211)B on Si(211) grown by molecular beam epitaxy

AU - Rujirawat, S.

AU - Almeida, L. A.

AU - Chen, Y. P.

AU - Sivananthan, S.

AU - Smith, David

PY - 1997/9/29

Y1 - 1997/9/29

N2 - We describe the growth of high quality CdTe(211)B layers by molecular beam epitaxy on nominal Si(211) substrates. Prior to CdTe deposition, thin ZnTe(211)B buffer layers were grown to preserve the homo-orientation. Large-area CdTe(211)B layers were routinely obtained by optimizing the growth parameters. From x-ray diffraction, we observed the presence of twin-free CdTe(211)B layers. One 8 μm thick CdTe epilayer had a near-surface etch pit density of 1.5×105 cm-2, which surpassed the best value reported for CdTe(211)B grown on GaAs(211)B, GaAs/Si(211), or Si(211) substrates.

AB - We describe the growth of high quality CdTe(211)B layers by molecular beam epitaxy on nominal Si(211) substrates. Prior to CdTe deposition, thin ZnTe(211)B buffer layers were grown to preserve the homo-orientation. Large-area CdTe(211)B layers were routinely obtained by optimizing the growth parameters. From x-ray diffraction, we observed the presence of twin-free CdTe(211)B layers. One 8 μm thick CdTe epilayer had a near-surface etch pit density of 1.5×105 cm-2, which surpassed the best value reported for CdTe(211)B grown on GaAs(211)B, GaAs/Si(211), or Si(211) substrates.

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High quality large-area CdTe(211)B on Si(211) grown by molecular beam epitaxy

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