High quality large-area CdTe(211)B on Si(211) grown by molecular beam epitaxy

S. Rujirawat, L. A. Almeida, Y. P. Chen, S. Sivananthan, David Smith

Research output: Contribution to journalArticle

68 Scopus citations

Abstract

We describe the growth of high quality CdTe(211)B layers by molecular beam epitaxy on nominal Si(211) substrates. Prior to CdTe deposition, thin ZnTe(211)B buffer layers were grown to preserve the homo-orientation. Large-area CdTe(211)B layers were routinely obtained by optimizing the growth parameters. From x-ray diffraction, we observed the presence of twin-free CdTe(211)B layers. One 8 μm thick CdTe epilayer had a near-surface etch pit density of 1.5×105 cm-2, which surpassed the best value reported for CdTe(211)B grown on GaAs(211)B, GaAs/Si(211), or Si(211) substrates.

Original languageEnglish (US)
Pages (from-to)1810-1812
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number13
DOIs
StatePublished - Sep 29 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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