We describe the growth of high quality CdTe(211)B layers by molecular beam epitaxy on nominal Si(211) substrates. Prior to CdTe deposition, thin ZnTe(211)B buffer layers were grown to preserve the homo-orientation. Large-area CdTe(211)B layers were routinely obtained by optimizing the growth parameters. From x-ray diffraction, we observed the presence of twin-free CdTe(211)B layers. One 8 μm thick CdTe epilayer had a near-surface etch pit density of 1.5×105 cm-2, which surpassed the best value reported for CdTe(211)B grown on GaAs(211)B, GaAs/Si(211), or Si(211) substrates.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Sep 29 1997|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)