High quality InGaN for photovoltaic applications

Type and spatial distribution of crystalline defects and 'phase' separation

Nikolai Faleev, Balakrishnam Jampana, Anup Pancholi, Omkar Jani, Hongbo Yu, Ian Ferguson, Valeria Stoleru, Robert Opila, Christiana Honsberg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The III-nitride material system with band gap ranging from 0.7eV to 6.2eV has substantial potential to develop high-efficiency solar cells. The III-nitride materials are grown by MOCVD on a lattice mismatched sapphire substrate (0001). This paper presents the generation of extended crystalline defects and their spatial distribution in the GaN and In0.12Ga 0.88N layers as a function of In0.12Ga0.88N thickness. The material is characterized by photoluminescence, and the primary peak intensity is observed to increase with thickness, up to 200 nm, but the intensity diminishes with further increase in thickness. Additional photoluminescence peaks are observed for In0.12Ga0.88N thicknesses greater than 100 nm. These observations are attributed to extended crystalline defects and are characterized by high resolution x-ray diffraction. A detailed analysis of these extended crystalline defects is presented based on rocking curves, symmetric and asymmetric reciprocal space maps. The crystalline defects are unavoidable during epitaxial growth, but knowledge of their generation process yields better control over them.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
DOIs
StatePublished - 2008
Externally publishedYes
Event33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 - San Diego, CA, United States
Duration: May 11 2008May 16 2008

Other

Other33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
CountryUnited States
CitySan Diego, CA
Period5/11/085/16/08

Fingerprint

Phase separation
Spatial distribution
Crystalline materials
Defects
Nitrides
Photoluminescence
Metallorganic chemical vapor deposition
Epitaxial growth
Sapphire
Solar cells
Energy gap
Diffraction
X rays
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Faleev, N., Jampana, B., Pancholi, A., Jani, O., Yu, H., Ferguson, I., ... Honsberg, C. (2008). High quality InGaN for photovoltaic applications: Type and spatial distribution of crystalline defects and 'phase' separation. In Conference Record of the IEEE Photovoltaic Specialists Conference [4922895] https://doi.org/10.1109/PVSC.2008.4922895

High quality InGaN for photovoltaic applications : Type and spatial distribution of crystalline defects and 'phase' separation. / Faleev, Nikolai; Jampana, Balakrishnam; Pancholi, Anup; Jani, Omkar; Yu, Hongbo; Ferguson, Ian; Stoleru, Valeria; Opila, Robert; Honsberg, Christiana.

Conference Record of the IEEE Photovoltaic Specialists Conference. 2008. 4922895.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Faleev, N, Jampana, B, Pancholi, A, Jani, O, Yu, H, Ferguson, I, Stoleru, V, Opila, R & Honsberg, C 2008, High quality InGaN for photovoltaic applications: Type and spatial distribution of crystalline defects and 'phase' separation. in Conference Record of the IEEE Photovoltaic Specialists Conference., 4922895, 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008, San Diego, CA, United States, 5/11/08. https://doi.org/10.1109/PVSC.2008.4922895
Faleev N, Jampana B, Pancholi A, Jani O, Yu H, Ferguson I et al. High quality InGaN for photovoltaic applications: Type and spatial distribution of crystalline defects and 'phase' separation. In Conference Record of the IEEE Photovoltaic Specialists Conference. 2008. 4922895 https://doi.org/10.1109/PVSC.2008.4922895
Faleev, Nikolai ; Jampana, Balakrishnam ; Pancholi, Anup ; Jani, Omkar ; Yu, Hongbo ; Ferguson, Ian ; Stoleru, Valeria ; Opila, Robert ; Honsberg, Christiana. / High quality InGaN for photovoltaic applications : Type and spatial distribution of crystalline defects and 'phase' separation. Conference Record of the IEEE Photovoltaic Specialists Conference. 2008.
@inproceedings{c43a6335e2694d7fa43c7d40a96b2835,
title = "High quality InGaN for photovoltaic applications: Type and spatial distribution of crystalline defects and 'phase' separation",
abstract = "The III-nitride material system with band gap ranging from 0.7eV to 6.2eV has substantial potential to develop high-efficiency solar cells. The III-nitride materials are grown by MOCVD on a lattice mismatched sapphire substrate (0001). This paper presents the generation of extended crystalline defects and their spatial distribution in the GaN and In0.12Ga 0.88N layers as a function of In0.12Ga0.88N thickness. The material is characterized by photoluminescence, and the primary peak intensity is observed to increase with thickness, up to 200 nm, but the intensity diminishes with further increase in thickness. Additional photoluminescence peaks are observed for In0.12Ga0.88N thicknesses greater than 100 nm. These observations are attributed to extended crystalline defects and are characterized by high resolution x-ray diffraction. A detailed analysis of these extended crystalline defects is presented based on rocking curves, symmetric and asymmetric reciprocal space maps. The crystalline defects are unavoidable during epitaxial growth, but knowledge of their generation process yields better control over them.",
author = "Nikolai Faleev and Balakrishnam Jampana and Anup Pancholi and Omkar Jani and Hongbo Yu and Ian Ferguson and Valeria Stoleru and Robert Opila and Christiana Honsberg",
year = "2008",
doi = "10.1109/PVSC.2008.4922895",
language = "English (US)",
isbn = "9781424416417",
booktitle = "Conference Record of the IEEE Photovoltaic Specialists Conference",

}

TY - GEN

T1 - High quality InGaN for photovoltaic applications

T2 - Type and spatial distribution of crystalline defects and 'phase' separation

AU - Faleev, Nikolai

AU - Jampana, Balakrishnam

AU - Pancholi, Anup

AU - Jani, Omkar

AU - Yu, Hongbo

AU - Ferguson, Ian

AU - Stoleru, Valeria

AU - Opila, Robert

AU - Honsberg, Christiana

PY - 2008

Y1 - 2008

N2 - The III-nitride material system with band gap ranging from 0.7eV to 6.2eV has substantial potential to develop high-efficiency solar cells. The III-nitride materials are grown by MOCVD on a lattice mismatched sapphire substrate (0001). This paper presents the generation of extended crystalline defects and their spatial distribution in the GaN and In0.12Ga 0.88N layers as a function of In0.12Ga0.88N thickness. The material is characterized by photoluminescence, and the primary peak intensity is observed to increase with thickness, up to 200 nm, but the intensity diminishes with further increase in thickness. Additional photoluminescence peaks are observed for In0.12Ga0.88N thicknesses greater than 100 nm. These observations are attributed to extended crystalline defects and are characterized by high resolution x-ray diffraction. A detailed analysis of these extended crystalline defects is presented based on rocking curves, symmetric and asymmetric reciprocal space maps. The crystalline defects are unavoidable during epitaxial growth, but knowledge of their generation process yields better control over them.

AB - The III-nitride material system with band gap ranging from 0.7eV to 6.2eV has substantial potential to develop high-efficiency solar cells. The III-nitride materials are grown by MOCVD on a lattice mismatched sapphire substrate (0001). This paper presents the generation of extended crystalline defects and their spatial distribution in the GaN and In0.12Ga 0.88N layers as a function of In0.12Ga0.88N thickness. The material is characterized by photoluminescence, and the primary peak intensity is observed to increase with thickness, up to 200 nm, but the intensity diminishes with further increase in thickness. Additional photoluminescence peaks are observed for In0.12Ga0.88N thicknesses greater than 100 nm. These observations are attributed to extended crystalline defects and are characterized by high resolution x-ray diffraction. A detailed analysis of these extended crystalline defects is presented based on rocking curves, symmetric and asymmetric reciprocal space maps. The crystalline defects are unavoidable during epitaxial growth, but knowledge of their generation process yields better control over them.

UR - http://www.scopus.com/inward/record.url?scp=84879737345&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84879737345&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2008.4922895

DO - 10.1109/PVSC.2008.4922895

M3 - Conference contribution

SN - 9781424416417

BT - Conference Record of the IEEE Photovoltaic Specialists Conference

ER -