TY - GEN
T1 - High quality InGaN for photovoltaic applications
T2 - 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
AU - Faleev, Nikolai
AU - Jampana, Balakrishnam
AU - Pancholi, Anup
AU - Jani, Omkar
AU - Yu, Hongbo
AU - Ferguson, Ian
AU - Stoleru, Valeria
AU - Opila, Robert
AU - Honsberg, Christiana
PY - 2008
Y1 - 2008
N2 - The III-nitride material system with band gap ranging from 0.7eV to 6.2eV has substantial potential to develop high-efficiency solar cells. The III-nitride materials are grown by MOCVD on a lattice mismatched sapphire substrate (0001). This paper presents the generation of extended crystalline defects and their spatial distribution in the GaN and In0.12Ga 0.88N layers as a function of In0.12Ga0.88N thickness. The material is characterized by photoluminescence, and the primary peak intensity is observed to increase with thickness, up to 200 nm, but the intensity diminishes with further increase in thickness. Additional photoluminescence peaks are observed for In0.12Ga0.88N thicknesses greater than 100 nm. These observations are attributed to extended crystalline defects and are characterized by high resolution x-ray diffraction. A detailed analysis of these extended crystalline defects is presented based on rocking curves, symmetric and asymmetric reciprocal space maps. The crystalline defects are unavoidable during epitaxial growth, but knowledge of their generation process yields better control over them.
AB - The III-nitride material system with band gap ranging from 0.7eV to 6.2eV has substantial potential to develop high-efficiency solar cells. The III-nitride materials are grown by MOCVD on a lattice mismatched sapphire substrate (0001). This paper presents the generation of extended crystalline defects and their spatial distribution in the GaN and In0.12Ga 0.88N layers as a function of In0.12Ga0.88N thickness. The material is characterized by photoluminescence, and the primary peak intensity is observed to increase with thickness, up to 200 nm, but the intensity diminishes with further increase in thickness. Additional photoluminescence peaks are observed for In0.12Ga0.88N thicknesses greater than 100 nm. These observations are attributed to extended crystalline defects and are characterized by high resolution x-ray diffraction. A detailed analysis of these extended crystalline defects is presented based on rocking curves, symmetric and asymmetric reciprocal space maps. The crystalline defects are unavoidable during epitaxial growth, but knowledge of their generation process yields better control over them.
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U2 - 10.1109/PVSC.2008.4922895
DO - 10.1109/PVSC.2008.4922895
M3 - Conference contribution
AN - SCOPUS:84879737345
SN - 9781424416417
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
BT - 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
Y2 - 11 May 2008 through 16 May 2008
ER -