High-quality III-V nitrides grown by metalorganic chemical vapor deposition

R. D. Dupuis; A. L. Holmes; P. A. Grudowski; K. G. Fertitta; Fernando Ponce

High-quality III-V nitrides grown by metalorganic chemical vapor deposition

R. D. Dupuis, A. L. Holmes, P. A. Grudowski, K. G. Fertitta, Fernando Ponce

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report the growth of high-quality III-V nitride heteroepitaxial films on (0001) sapphire substrates by low-pressure metalorganic chemical vapor deposition (MOCVD). These films have exhibited narrow X-ray diffraction rocking curves with full-width-at-half-maximum values as low as ΔΘapprox. 37 arc sec. Photoluminescence and transmission electron microscopy analysis further indicate the samples to be of high quality.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Publisher	Materials Research Society
Pages	183-188
Number of pages	6
Volume	395
State	Published - 1996
Externally published	Yes
Event	Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA Duration: Nov 26 1995 → Dec 1 1995

Other

Other	Proceedings of the 1995 MRS Fall Meeting
City	Boston, MA, USA
Period	11/26/95 → 12/1/95

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

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title = "High-quality III-V nitrides grown by metalorganic chemical vapor deposition",

abstract = "We report the growth of high-quality III-V nitride heteroepitaxial films on (0001) sapphire substrates by low-pressure metalorganic chemical vapor deposition (MOCVD). These films have exhibited narrow X-ray diffraction rocking curves with full-width-at-half-maximum values as low as ΔΘapprox. 37 arc sec. Photoluminescence and transmission electron microscopy analysis further indicate the samples to be of high quality.",

author = "Dupuis, {R. D.} and Holmes, {A. L.} and Grudowski, {P. A.} and Fertitta, {K. G.} and Fernando Ponce",

year = "1996",

language = "English (US)",

volume = "395",

pages = "183--188",

booktitle = "Materials Research Society Symposium - Proceedings",

publisher = "Materials Research Society",

note = "Proceedings of the 1995 MRS Fall Meeting ; Conference date: 26-11-1995 Through 01-12-1995",

}

TY - GEN

T1 - High-quality III-V nitrides grown by metalorganic chemical vapor deposition

AU - Dupuis, R. D.

AU - Holmes, A. L.

AU - Grudowski, P. A.

AU - Fertitta, K. G.

AU - Ponce, Fernando

PY - 1996

Y1 - 1996

N2 - We report the growth of high-quality III-V nitride heteroepitaxial films on (0001) sapphire substrates by low-pressure metalorganic chemical vapor deposition (MOCVD). These films have exhibited narrow X-ray diffraction rocking curves with full-width-at-half-maximum values as low as ΔΘapprox. 37 arc sec. Photoluminescence and transmission electron microscopy analysis further indicate the samples to be of high quality.

AB - We report the growth of high-quality III-V nitride heteroepitaxial films on (0001) sapphire substrates by low-pressure metalorganic chemical vapor deposition (MOCVD). These films have exhibited narrow X-ray diffraction rocking curves with full-width-at-half-maximum values as low as ΔΘapprox. 37 arc sec. Photoluminescence and transmission electron microscopy analysis further indicate the samples to be of high quality.

UR - http://www.scopus.com/inward/record.url?scp=0029746611&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029746611&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0029746611

VL - 395

SP - 183

EP - 188

BT - Materials Research Society Symposium - Proceedings

PB - Materials Research Society

T2 - Proceedings of the 1995 MRS Fall Meeting

Y2 - 26 November 1995 through 1 December 1995

ER -

High-quality III-V nitrides grown by metalorganic chemical vapor deposition

Abstract

Other

ASJC Scopus subject areas

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