High-quality III-V nitrides grown by metalorganic chemical vapor deposition

R. D. Dupuis, A. L. Holmes, P. A. Grudowski, K. G. Fertitta, Fernando Ponce

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

We report the growth of high-quality III-V nitride heteroepitaxial films on (0001) sapphire substrates by low-pressure metalorganic chemical vapor deposition (MOCVD). These films have exhibited narrow X-ray diffraction rocking curves with full-width-at-half-maximum values as low as ΔΘapprox. 37 arc sec. Photoluminescence and transmission electron microscopy analysis further indicate the samples to be of high quality.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages183-188
Number of pages6
Volume395
StatePublished - 1996
Externally publishedYes
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 26 1995Dec 1 1995

Other

OtherProceedings of the 1995 MRS Fall Meeting
CityBoston, MA, USA
Period11/26/9512/1/95

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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