High-Quality GaN heteroepitaxial films grown by metalorganic chemical vapor deposition

K. G. Fertitta, A. L. Holmes, F. J. Ciuba, R. D. Dupuis, F. A. Ponce

Research output: Contribution to journalArticle

20 Scopus citations

Abstract

In this paper, we describe the growth and characterization of high-quality GaN heteroepitaxial films grown on basal-plane sapphire substrates using metalorganic chemical vapor deposition. The quality of these films is analyzed by a variety of methods, including high-resolution x-ray diffraction, optical transmission spectroscopy, transmission electron microscopy (TEM), room temperature photoluminescence, and room-temperature Hall measurements. The x-ray diffraction full width at half maximum value of ΔΘ ∼37 arc s is the narrowest reported to date for any III-V nitride film on any substrate. The x-ray rocking curves for ∼0.48 μm thick GaN/Al2O3 heteroepitaxial layers exhibit Pendellösung fringes, indicating that even relatively thin films can be of high quality. High-resolution TEM lattice images further attest to the excellent structural quality, showing the films to be completely free of stacking faults. Furthermore, no evidence of columnar growth is observed.

Original languageEnglish (US)
Pages (from-to)257-261
Number of pages5
JournalJournal of Electronic Materials
Volume24
Issue number4
DOIs
StatePublished - Apr 1 1995
Externally publishedYes

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Keywords

  • GaN
  • heteroepitaxial
  • metalorganic chemical vapor deposition (MOCVD)
  • x-ray diffraction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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