High-quality Al_0.48In_0.52As grown by molecular beam epitaxy at high InP-substrate temperature

Engineering & Materials Science

• Molecular beam epitaxy 100%
• Luminescence 95%
• Linewidth 81%
• Excitons 56%
• Growth temperature 52%
• Substrates 45%
• Optical properties 40%
• Structural properties 34%
• Crystalline materials 33%
• Crystals 32%
• X ray diffraction 31%
• Temperature 25%

Chemical Compounds

• Molecular Beam Epitaxy 92%
• Exciton Luminescence 59%
• Bound Exciton 54%
• Homogeneity 28%
• Optical Property 23%
• Luminiscence Type 22%
• Alloy 22%
• X-Ray Diffraction 15%
• Reduction 14%

Physics & Astronomy

• molecular beam epitaxy 54%
• luminescence 49%
• homogeneity 30%
• excitons 25%
• optical properties 20%
• augmentation 19%
• temperature 19%
• diffraction 17%
• crystals 15%
• x rays 14%
• performance 14%