High-quality Al0.48In0.52As grown by molecular beam epitaxy at high InP-substrate temperature

Eric Tournié; Yong Hang Zhang; Klaus Ploog

doi:10.1016/0167-577X(91)90130-X

High-quality Al_0.48In_0.52As grown by molecular beam epitaxy at high InP-substrate temperature

Eric Tournié, Yong Hang Zhang, Klaus Ploog

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We have studied the influence of the InP-substrate temperature ranging from 460 to 600°C on the structural and optical properties of Al_0.48In_0.52As ternary layers grown by molecular beam epitaxy. A high growth temperature of 600° C results in both high structural perfection and excellent optical performance of the material. The observed narrow linewidth of double-crystal X-ray diffraction peaks demonstrates the improvement of the crystalline quality. The narrow linewidth of the bound exciton luminescence eak at 6 K shows the enhancement of the alloy homogeneity. The high integrated luminescence efficiency obtained even at 120 K reveals the reduction of non-radiative recombination centers.

Original language	English (US)
Pages (from-to)	343-347
Number of pages	5
Journal	Materials Letters
Volume	11
Issue number	10-12
DOIs	https://doi.org/10.1016/0167-577X(91)90130-X
State	Published - Aug 1991
Externally published	Yes

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/0167-577X(91)90130-X

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title = "High-quality Al0.48In0.52As grown by molecular beam epitaxy at high InP-substrate temperature",

abstract = "We have studied the influence of the InP-substrate temperature ranging from 460 to 600°C on the structural and optical properties of Al0.48In0.52As ternary layers grown by molecular beam epitaxy. A high growth temperature of 600° C results in both high structural perfection and excellent optical performance of the material. The observed narrow linewidth of double-crystal X-ray diffraction peaks demonstrates the improvement of the crystalline quality. The narrow linewidth of the bound exciton luminescence eak at 6 K shows the enhancement of the alloy homogeneity. The high integrated luminescence efficiency obtained even at 120 K reveals the reduction of non-radiative recombination centers.",

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AU - Tournié, Eric

AU - Zhang, Yong Hang

AU - Ploog, Klaus

PY - 1991/8

Y1 - 1991/8

N2 - We have studied the influence of the InP-substrate temperature ranging from 460 to 600°C on the structural and optical properties of Al0.48In0.52As ternary layers grown by molecular beam epitaxy. A high growth temperature of 600° C results in both high structural perfection and excellent optical performance of the material. The observed narrow linewidth of double-crystal X-ray diffraction peaks demonstrates the improvement of the crystalline quality. The narrow linewidth of the bound exciton luminescence eak at 6 K shows the enhancement of the alloy homogeneity. The high integrated luminescence efficiency obtained even at 120 K reveals the reduction of non-radiative recombination centers.

AB - We have studied the influence of the InP-substrate temperature ranging from 460 to 600°C on the structural and optical properties of Al0.48In0.52As ternary layers grown by molecular beam epitaxy. A high growth temperature of 600° C results in both high structural perfection and excellent optical performance of the material. The observed narrow linewidth of double-crystal X-ray diffraction peaks demonstrates the improvement of the crystalline quality. The narrow linewidth of the bound exciton luminescence eak at 6 K shows the enhancement of the alloy homogeneity. The high integrated luminescence efficiency obtained even at 120 K reveals the reduction of non-radiative recombination centers.

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ER -

High-quality Al_0.48In_0.52As grown by molecular beam epitaxy at high InP-substrate temperature

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