High-quality Al0.48In0.52As grown by molecular beam epitaxy at high InP-substrate temperature

Eric Tournié, Yong-Hang Zhang, Klaus Ploog

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We have studied the influence of the InP-substrate temperature ranging from 460 to 600°C on the structural and optical properties of Al0.48In0.52As ternary layers grown by molecular beam epitaxy. A high growth temperature of 600° C results in both high structural perfection and excellent optical performance of the material. The observed narrow linewidth of double-crystal X-ray diffraction peaks demonstrates the improvement of the crystalline quality. The narrow linewidth of the bound exciton luminescence eak at 6 K shows the enhancement of the alloy homogeneity. The high integrated luminescence efficiency obtained even at 120 K reveals the reduction of non-radiative recombination centers.

Original languageEnglish (US)
Pages (from-to)343-347
Number of pages5
JournalMaterials Letters
Volume11
Issue number10-12
DOIs
StatePublished - 1991
Externally publishedYes

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Molecular beam epitaxy
Linewidth
Luminescence
molecular beam epitaxy
luminescence
Growth temperature
Substrates
Excitons
homogeneity
Structural properties
Optical properties
excitons
Crystalline materials
optical properties
X ray diffraction
Temperature
Crystals
temperature
augmentation
diffraction

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

High-quality Al0.48In0.52As grown by molecular beam epitaxy at high InP-substrate temperature. / Tournié, Eric; Zhang, Yong-Hang; Ploog, Klaus.

In: Materials Letters, Vol. 11, No. 10-12, 1991, p. 343-347.

Research output: Contribution to journalArticle

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