Abstract
This process can provide better lateral mode selection for edge-emitting laser diode. This process propsed a more aggressive thermal managment process compared with conventional high power laser thermal management method: p side down mounting. This process will also solve the cleaving difficulty when wafer bounding is used for thermal managment. The whole process is easy for industry manufacture.
| Original language | English (US) |
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| State | Published - Jun 16 2005 |