High-power, low-efficiency-droop semipolar (202̄1̄) single-quantum-well blue light-emitting diodes

Chih Chien Pan, Shinichi Tanaka, Feng Wu, Yuji Zhao, James S. Speck, Shuji Nakamura, Steven P. Den Baars, Daniel Feezel

Research output: Contribution to journalArticle

107 Scopus citations

Abstract

We demonstrate a small-area (0.1mm 2) semipolar (202̄ 1̄) blue (447 nm) light-emitting diode (LED) with high light output power (LOP) and external quantum efficiency (EQE) by utilizing a single 12-nm-thick InGaN quantum well. The LED had pulsed LOPs of 140, 253, 361, and 460mW, and EQEs of 50.1, 45.3, 43.0, and 41.2%, at current densities of 100, 200, 300, and 400 A/cm 2, respectively. The device showed little blue shift and had a narrow full width at half maximum (FWHM). Micro-electroluminescence (μ-EL) and scanning transmission electron microscope (STEM) images indicate a high-quality InGaN quantum well (QW) layer.

Original languageEnglish (US)
Article number062103
JournalApplied Physics Express
Volume5
Issue number6
DOIs
StatePublished - Jun 1 2012
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Pan, C. C., Tanaka, S., Wu, F., Zhao, Y., Speck, J. S., Nakamura, S., Den Baars, S. P., & Feezel, D. (2012). High-power, low-efficiency-droop semipolar (202̄1̄) single-quantum-well blue light-emitting diodes. Applied Physics Express, 5(6), [062103]. https://doi.org/10.1143/APEX.5.062103