TY - JOUR
T1 - High-power blue-violet semipolar (202̄1̄) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2
AU - Zhao, Yuji
AU - Tanaka, Shinichi
AU - Pan, Chih Chien
AU - Fujito, Kenji
AU - Feezell, Daniel
AU - Speck, James S.
AU - DenBaars, Steven P.
AU - Nakamura, Shuji
PY - 2011/8
Y1 - 2011/8
N2 - We report a high-power blue light-emitting diode (LED) with a high external quantum efficiency and low droop on a free-standing (202̄1̄) GaN substrate. At a forward current of 20 mA, the LED showed a peak external quantum efficiency of 52% and an output power of 30.6mW. In higher current density regions, the LED also showed outstanding performance, with droop ratios of 0.7% at 35 A/cm2, 4.3% at 50 A/cm2, 8.5% at 100 A/cm 2, and 14.3% at 200 A/cm2. The output power and external quantum efficiency at 200 A/cm2 were 266.5mW and 45.3%, respectively.
AB - We report a high-power blue light-emitting diode (LED) with a high external quantum efficiency and low droop on a free-standing (202̄1̄) GaN substrate. At a forward current of 20 mA, the LED showed a peak external quantum efficiency of 52% and an output power of 30.6mW. In higher current density regions, the LED also showed outstanding performance, with droop ratios of 0.7% at 35 A/cm2, 4.3% at 50 A/cm2, 8.5% at 100 A/cm 2, and 14.3% at 200 A/cm2. The output power and external quantum efficiency at 200 A/cm2 were 266.5mW and 45.3%, respectively.
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U2 - 10.1143/APEX.4.082104
DO - 10.1143/APEX.4.082104
M3 - Article
AN - SCOPUS:80051589259
SN - 1882-0778
VL - 4
JO - Applied Physics Express
JF - Applied Physics Express
IS - 8
M1 - 082104
ER -