High-power blue-violet semipolar (202̄1̄) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2

Yuji Zhao, Shinichi Tanaka, Chih Chien Pan, Kenji Fujito, Daniel Feezell, James S. Speck, Steven P. DenBaars, Shuji Nakamura

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Abstract

We report a high-power blue light-emitting diode (LED) with a high external quantum efficiency and low droop on a free-standing (202̄1̄) GaN substrate. At a forward current of 20 mA, the LED showed a peak external quantum efficiency of 52% and an output power of 30.6mW. In higher current density regions, the LED also showed outstanding performance, with droop ratios of 0.7% at 35 A/cm2, 4.3% at 50 A/cm2, 8.5% at 100 A/cm 2, and 14.3% at 200 A/cm2. The output power and external quantum efficiency at 200 A/cm2 were 266.5mW and 45.3%, respectively.

Original languageEnglish (US)
Article number082104
JournalApplied Physics Express
Volume4
Issue number8
DOIs
StatePublished - Aug 1 2011

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Zhao, Y., Tanaka, S., Pan, C. C., Fujito, K., Feezell, D., Speck, J. S., DenBaars, S. P., & Nakamura, S. (2011). High-power blue-violet semipolar (202̄1̄) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2. Applied Physics Express, 4(8), [082104]. https://doi.org/10.1143/APEX.4.082104