High-power blue-violet semipolar (202̄1̄) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2

Yuji Zhao, Shinichi Tanaka, Chih Chien Pan, Kenji Fujito, Daniel Feezell, James S. Speck, Steven P. DenBaars, Shuji Nakamura

Research output: Contribution to journalArticle

161 Citations (Scopus)

Abstract

We report a high-power blue light-emitting diode (LED) with a high external quantum efficiency and low droop on a free-standing (202̄1̄) GaN substrate. At a forward current of 20 mA, the LED showed a peak external quantum efficiency of 52% and an output power of 30.6mW. In higher current density regions, the LED also showed outstanding performance, with droop ratios of 0.7% at 35 A/cm2, 4.3% at 50 A/cm2, 8.5% at 100 A/cm 2, and 14.3% at 200 A/cm2. The output power and external quantum efficiency at 200 A/cm2 were 266.5mW and 45.3%, respectively.

Original languageEnglish (US)
Article number082104
JournalApplied Physics Express
Volume4
Issue number8
DOIs
StatePublished - Aug 2011
Externally publishedYes

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Quantum efficiency
Light emitting diodes
quantum efficiency
light emitting diodes
output
high current
Current density
current density
Substrates

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

High-power blue-violet semipolar (202̄1̄) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2 . / Zhao, Yuji; Tanaka, Shinichi; Pan, Chih Chien; Fujito, Kenji; Feezell, Daniel; Speck, James S.; DenBaars, Steven P.; Nakamura, Shuji.

In: Applied Physics Express, Vol. 4, No. 8, 082104, 08.2011.

Research output: Contribution to journalArticle

Zhao, Yuji ; Tanaka, Shinichi ; Pan, Chih Chien ; Fujito, Kenji ; Feezell, Daniel ; Speck, James S. ; DenBaars, Steven P. ; Nakamura, Shuji. / High-power blue-violet semipolar (202̄1̄) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2 In: Applied Physics Express. 2011 ; Vol. 4, No. 8.
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AU - Fujito, Kenji

AU - Feezell, Daniel

AU - Speck, James S.

AU - DenBaars, Steven P.

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