TY - GEN
T1 - High performance ZnO nanowire FET with ITO contacts
AU - Hollister, Matthew A.
AU - Le, John D.
AU - Xiao, Guanghua
AU - Lu, Xuekun
AU - Kiehl, Richard A.
PY - 2007/12/1
Y1 - 2007/12/1
N2 - Nanowire FETs based on a ZnO channel, a SiO2 gate-dielectric and ITO source-drain contacts are reported. The 55 mS/mm transconductance and other performance parameters are the best reported for any ZnO-based FET. The results demonstrate that high-performance ZnO NW FETs can be fabricated by conventional processes without special gate dielectrics or surface layers.
AB - Nanowire FETs based on a ZnO channel, a SiO2 gate-dielectric and ITO source-drain contacts are reported. The 55 mS/mm transconductance and other performance parameters are the best reported for any ZnO-based FET. The results demonstrate that high-performance ZnO NW FETs can be fabricated by conventional processes without special gate dielectrics or surface layers.
UR - http://www.scopus.com/inward/record.url?scp=47249133903&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=47249133903&partnerID=8YFLogxK
U2 - 10.1109/DRC.2007.4373675
DO - 10.1109/DRC.2007.4373675
M3 - Conference contribution
AN - SCOPUS:47249133903
SN - 1424411025
SN - 9781424411023
T3 - 65th DRC Device Research Conference
SP - 113
EP - 114
BT - 65th DRC Device Research Conference
T2 - 65th DRC Device Research Conference
Y2 - 18 June 2007 through 20 June 2007
ER -