High performance vertical GaN-on-GaN p-n power diodes with hydrogen-plasma-based edge termination

Houqiang Fu; Kai Fu; Xuanqi Huang; Hong Chen; Izak Baranowski; Tsung Han Yang; Jossue Montes; Yuji Zhao

doi:10.1109/LED.2018.2837625

High performance vertical GaN-on-GaN p-n power diodes with hydrogen-plasma-based edge termination

Houqiang Fu, Kai Fu, Xuanqi Huang, Hong Chen, Izak Baranowski, Tsung Han Yang, Jossue Montes, Yuji Zhao

Engineering, Ira A. Fulton Schools of (IAFSE)

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

This letter reports the first implementation of a hydrogen-plasma-based edge termination technique (HPET) in vertical GaN p-n power diodes grown on bulk GaN substrates using metalorganic chemical vapor deposition. The device with a 9- μm -thick drift layer exhibited a high breakdown voltage ( V_bd) of 1.57 kV, a low ON-resistance (R_ON) of 0.45 mΩ.cm² (or 0.70 mΩ . cm² with current spreading considered) and a high Baliga's figure-of-merit (V²_bd/R_ON) of 5.5 GW/cm² (or 3.6 GW/cm²) without passivation or field plate, which are close to the theoretical limit of GaN. This technique enabled a significant reduction in leakage current (10⁶ times at -300 V) and a huge enhancement in V_bd(from 300 V to 1.57 kV). Furthermore, the device showed good forward characteristics with a turn-ON voltage of 3.5 V, an ON-current of 2 kA/cm² (or 1.3 kA/cm²), an ON/OFF ratio of 10⁹, and an ideality factor of 1.4. This work shows the HPET can serve as an effective, low cost, and easy-to-implement edge termination technique for high voltage and high power GaN p-n power diodes.

Original language	English (US)
Pages (from-to)	1018-1021
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	39
Issue number	7
DOIs	https://doi.org/10.1109/LED.2018.2837625
State	Published - Jul 2018

Keywords

Gallium nitride
breakdown
edge termination
p-n diodes
power electronics
wide bandgap semiconductor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "High performance vertical GaN-on-GaN p-n power diodes with hydrogen-plasma-based edge termination",

abstract = "This letter reports the first implementation of a hydrogen-plasma-based edge termination technique (HPET) in vertical GaN p-n power diodes grown on bulk GaN substrates using metalorganic chemical vapor deposition. The device with a 9- μm -thick drift layer exhibited a high breakdown voltage ( Vbd) of 1.57 kV, a low ON-resistance (RON) of 0.45 mΩ.cm2 (or 0.70 mΩ . cm2 with current spreading considered) and a high Baliga's figure-of-merit (V2bd/RON) of 5.5 GW/cm2 (or 3.6 GW/cm2) without passivation or field plate, which are close to the theoretical limit of GaN. This technique enabled a significant reduction in leakage current (106 times at -300 V) and a huge enhancement in Vbd(from 300 V to 1.57 kV). Furthermore, the device showed good forward characteristics with a turn-ON voltage of 3.5 V, an ON-current of 2 kA/cm2 (or 1.3 kA/cm2), an ON/OFF ratio of 109, and an ideality factor of 1.4. This work shows the HPET can serve as an effective, low cost, and easy-to-implement edge termination technique for high voltage and high power GaN p-n power diodes.",

keywords = "Gallium nitride, breakdown, edge termination, p-n diodes, power electronics, wide bandgap semiconductor",

author = "Houqiang Fu and Kai Fu and Xuanqi Huang and Hong Chen and Izak Baranowski and Yang, {Tsung Han} and Jossue Montes and Yuji Zhao",

year = "2018",

month = jul,

doi = "10.1109/LED.2018.2837625",

language = "English (US)",

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journal = "IEEE Electron Device Letters",

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T1 - High performance vertical GaN-on-GaN p-n power diodes with hydrogen-plasma-based edge termination

AU - Fu, Houqiang

AU - Fu, Kai

AU - Huang, Xuanqi

AU - Chen, Hong

AU - Baranowski, Izak

AU - Yang, Tsung Han

AU - Montes, Jossue

AU - Zhao, Yuji

PY - 2018/7

Y1 - 2018/7

N2 - This letter reports the first implementation of a hydrogen-plasma-based edge termination technique (HPET) in vertical GaN p-n power diodes grown on bulk GaN substrates using metalorganic chemical vapor deposition. The device with a 9- μm -thick drift layer exhibited a high breakdown voltage ( Vbd) of 1.57 kV, a low ON-resistance (RON) of 0.45 mΩ.cm2 (or 0.70 mΩ . cm2 with current spreading considered) and a high Baliga's figure-of-merit (V2bd/RON) of 5.5 GW/cm2 (or 3.6 GW/cm2) without passivation or field plate, which are close to the theoretical limit of GaN. This technique enabled a significant reduction in leakage current (106 times at -300 V) and a huge enhancement in Vbd(from 300 V to 1.57 kV). Furthermore, the device showed good forward characteristics with a turn-ON voltage of 3.5 V, an ON-current of 2 kA/cm2 (or 1.3 kA/cm2), an ON/OFF ratio of 109, and an ideality factor of 1.4. This work shows the HPET can serve as an effective, low cost, and easy-to-implement edge termination technique for high voltage and high power GaN p-n power diodes.

AB - This letter reports the first implementation of a hydrogen-plasma-based edge termination technique (HPET) in vertical GaN p-n power diodes grown on bulk GaN substrates using metalorganic chemical vapor deposition. The device with a 9- μm -thick drift layer exhibited a high breakdown voltage ( Vbd) of 1.57 kV, a low ON-resistance (RON) of 0.45 mΩ.cm2 (or 0.70 mΩ . cm2 with current spreading considered) and a high Baliga's figure-of-merit (V2bd/RON) of 5.5 GW/cm2 (or 3.6 GW/cm2) without passivation or field plate, which are close to the theoretical limit of GaN. This technique enabled a significant reduction in leakage current (106 times at -300 V) and a huge enhancement in Vbd(from 300 V to 1.57 kV). Furthermore, the device showed good forward characteristics with a turn-ON voltage of 3.5 V, an ON-current of 2 kA/cm2 (or 1.3 kA/cm2), an ON/OFF ratio of 109, and an ideality factor of 1.4. This work shows the HPET can serve as an effective, low cost, and easy-to-implement edge termination technique for high voltage and high power GaN p-n power diodes.

KW - Gallium nitride

KW - breakdown

KW - edge termination

KW - p-n diodes

KW - power electronics

KW - wide bandgap semiconductor

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