High-performance radio frequency transistors based on diameter-separated semiconducting carbon nanotubes

Yu Cao, Yuchi Che, Jung Woo T Seo, Hui Gui, Mark C. Hersam, Chongwu Zhou

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Abstract

In this paper, we report the high-performance radio-frequency transistors based on the single-walled semiconducting carbon nanotubes with a refined average diameter of ∼1.6 nm. These diameter-separated carbon nanotube transistors show excellent transconductance of 55 μS/μm and desirable drain current saturation with an output resistance of ∼100 KΩ μm. An exceptional radio-frequency performance is also achieved with current gain and power gain cut-off frequencies of 23 GHz and 20 GHz (extrinsic) and 65 GHz and 35 GHz (intrinsic), respectively. These radio-frequency metrics are among the highest reported for the carbon nanotube thin-film transistors. This study provides demonstration of radio frequency transistors based on carbon nanotubes with tailored diameter distributions, which will guide the future application of carbon nanotubes in radio-frequency electronics.

Original languageEnglish (US)
Article number233105
JournalApplied Physics Letters
Volume108
Issue number23
DOIs
StatePublished - Jun 6 2016
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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