High-performance near-IR photodiodes: A novel chemistry-based approach to Ge and Ge-Sn devices integrated on silicon

Radek Roucka, Jay Mathews, Change Weng, Richard Beeler, John Tolle, Jose Menendez, John Kouvetakis

Research output: Contribution to journalArticle

72 Citations (Scopus)

Abstract

Ge/Si heterostructure diodes based on n++Si(100)/i-Ge/p-Ge and p++Si(100)/i-Ge/n-Ge stacks and intrinsic region thickness of ∼350 and ∼ 900 nm, respectively, were fabricated using a specially developed synthesis protocol that allows unprecedented control of film microstructure, morphology, and purity at complementary metal-oxide- semiconductor compatible conditions. From a growth and doping perspective, a main advantage of our inherently low-temperature (390 °C) soft-chemistry approach is that all high-energy processing steps are circumvented. Current-voltage measurements of circular mesas (60-250 μm in diameter) show dark current densities as low as 6 × 10-3 A/cm2 at -1 V bias, which is clearly improved over devices fabricated under low thermal budgets using traditional Ge deposition techniques. Spectral photocurrent measurements indicate external quantum efficiencies between 30 and 60% of the maximum theoretical value at zero bias, and approaching full collection efficiency at high reverse biases. The above Ge devices are compared to analogous low-temperature-grown (350 ° C) Ge0.98Sn0.02 diodes. The latter display much higher dark currents but also higher collection efficiencies close to 70% at zero bias. Moreover, the quantum efficiency of these Ge0.98Sn0.02 diodes remains strong at wavelengths longer than 1550 nm out to 1750 nm due to the reduced band gap of the alloy relative to Ge.

Original languageEnglish (US)
Article number5689404
Pages (from-to)213-222
Number of pages10
JournalIEEE Journal of Quantum Electronics
Volume47
Issue number2
DOIs
StatePublished - 2011

Fingerprint

Photodiodes
photodiodes
Diodes
Dark currents
chemistry
Quantum efficiency
Silicon
diodes
silicon
dark current
quantum efficiency
Voltage measurement
Electric current measurement
Photocurrents
Heterojunctions
mesas
Energy gap
Current density
Display devices
Doping (additives)

Keywords

  • Germanium-tin alloys
  • infrared detectors
  • integrated optoelectronics
  • p-i-n
  • photodiodes
  • photovoltaic cell materials
  • semiconductor epitaxial materials
  • ultrahigh vacuum chemical vapor deposition

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

High-performance near-IR photodiodes : A novel chemistry-based approach to Ge and Ge-Sn devices integrated on silicon. / Roucka, Radek; Mathews, Jay; Weng, Change; Beeler, Richard; Tolle, John; Menendez, Jose; Kouvetakis, John.

In: IEEE Journal of Quantum Electronics, Vol. 47, No. 2, 5689404, 2011, p. 213-222.

Research output: Contribution to journalArticle

@article{9e561d4331784f5f83ca79da28622f94,
title = "High-performance near-IR photodiodes: A novel chemistry-based approach to Ge and Ge-Sn devices integrated on silicon",
abstract = "Ge/Si heterostructure diodes based on n++Si(100)/i-Ge/p-Ge and p++Si(100)/i-Ge/n-Ge stacks and intrinsic region thickness of ∼350 and ∼ 900 nm, respectively, were fabricated using a specially developed synthesis protocol that allows unprecedented control of film microstructure, morphology, and purity at complementary metal-oxide- semiconductor compatible conditions. From a growth and doping perspective, a main advantage of our inherently low-temperature (390 °C) soft-chemistry approach is that all high-energy processing steps are circumvented. Current-voltage measurements of circular mesas (60-250 μm in diameter) show dark current densities as low as 6 × 10-3 A/cm2 at -1 V bias, which is clearly improved over devices fabricated under low thermal budgets using traditional Ge deposition techniques. Spectral photocurrent measurements indicate external quantum efficiencies between 30 and 60{\%} of the maximum theoretical value at zero bias, and approaching full collection efficiency at high reverse biases. The above Ge devices are compared to analogous low-temperature-grown (350 ° C) Ge0.98Sn0.02 diodes. The latter display much higher dark currents but also higher collection efficiencies close to 70{\%} at zero bias. Moreover, the quantum efficiency of these Ge0.98Sn0.02 diodes remains strong at wavelengths longer than 1550 nm out to 1750 nm due to the reduced band gap of the alloy relative to Ge.",
keywords = "Germanium-tin alloys, infrared detectors, integrated optoelectronics, p-i-n, photodiodes, photovoltaic cell materials, semiconductor epitaxial materials, ultrahigh vacuum chemical vapor deposition",
author = "Radek Roucka and Jay Mathews and Change Weng and Richard Beeler and John Tolle and Jose Menendez and John Kouvetakis",
year = "2011",
doi = "10.1109/JQE.2010.2077273",
language = "English (US)",
volume = "47",
pages = "213--222",
journal = "IEEE Journal of Quantum Electronics",
issn = "0018-9197",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",

}

TY - JOUR

T1 - High-performance near-IR photodiodes

T2 - A novel chemistry-based approach to Ge and Ge-Sn devices integrated on silicon

AU - Roucka, Radek

AU - Mathews, Jay

AU - Weng, Change

AU - Beeler, Richard

AU - Tolle, John

AU - Menendez, Jose

AU - Kouvetakis, John

PY - 2011

Y1 - 2011

N2 - Ge/Si heterostructure diodes based on n++Si(100)/i-Ge/p-Ge and p++Si(100)/i-Ge/n-Ge stacks and intrinsic region thickness of ∼350 and ∼ 900 nm, respectively, were fabricated using a specially developed synthesis protocol that allows unprecedented control of film microstructure, morphology, and purity at complementary metal-oxide- semiconductor compatible conditions. From a growth and doping perspective, a main advantage of our inherently low-temperature (390 °C) soft-chemistry approach is that all high-energy processing steps are circumvented. Current-voltage measurements of circular mesas (60-250 μm in diameter) show dark current densities as low as 6 × 10-3 A/cm2 at -1 V bias, which is clearly improved over devices fabricated under low thermal budgets using traditional Ge deposition techniques. Spectral photocurrent measurements indicate external quantum efficiencies between 30 and 60% of the maximum theoretical value at zero bias, and approaching full collection efficiency at high reverse biases. The above Ge devices are compared to analogous low-temperature-grown (350 ° C) Ge0.98Sn0.02 diodes. The latter display much higher dark currents but also higher collection efficiencies close to 70% at zero bias. Moreover, the quantum efficiency of these Ge0.98Sn0.02 diodes remains strong at wavelengths longer than 1550 nm out to 1750 nm due to the reduced band gap of the alloy relative to Ge.

AB - Ge/Si heterostructure diodes based on n++Si(100)/i-Ge/p-Ge and p++Si(100)/i-Ge/n-Ge stacks and intrinsic region thickness of ∼350 and ∼ 900 nm, respectively, were fabricated using a specially developed synthesis protocol that allows unprecedented control of film microstructure, morphology, and purity at complementary metal-oxide- semiconductor compatible conditions. From a growth and doping perspective, a main advantage of our inherently low-temperature (390 °C) soft-chemistry approach is that all high-energy processing steps are circumvented. Current-voltage measurements of circular mesas (60-250 μm in diameter) show dark current densities as low as 6 × 10-3 A/cm2 at -1 V bias, which is clearly improved over devices fabricated under low thermal budgets using traditional Ge deposition techniques. Spectral photocurrent measurements indicate external quantum efficiencies between 30 and 60% of the maximum theoretical value at zero bias, and approaching full collection efficiency at high reverse biases. The above Ge devices are compared to analogous low-temperature-grown (350 ° C) Ge0.98Sn0.02 diodes. The latter display much higher dark currents but also higher collection efficiencies close to 70% at zero bias. Moreover, the quantum efficiency of these Ge0.98Sn0.02 diodes remains strong at wavelengths longer than 1550 nm out to 1750 nm due to the reduced band gap of the alloy relative to Ge.

KW - Germanium-tin alloys

KW - infrared detectors

KW - integrated optoelectronics

KW - p-i-n

KW - photodiodes

KW - photovoltaic cell materials

KW - semiconductor epitaxial materials

KW - ultrahigh vacuum chemical vapor deposition

UR - http://www.scopus.com/inward/record.url?scp=78751678120&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78751678120&partnerID=8YFLogxK

U2 - 10.1109/JQE.2010.2077273

DO - 10.1109/JQE.2010.2077273

M3 - Article

AN - SCOPUS:78751678120

VL - 47

SP - 213

EP - 222

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

SN - 0018-9197

IS - 2

M1 - 5689404

ER -