High-performance AlN/GaN HEMTs on sapphire substrate with an oxidized gate insulator

Kelson D. Chabak, Dennis E. Walker, Michael R. Johnson, Antonio Crespo, Amir M. Dabiran, David Smith, Andrew M. Wowchak, Stephen K. Tetlak, Mauricio Kossler, James K. Gillespie, Robert C. Fitch, Manuel Trejo

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