High-performance AlN/GaN HEMTs on sapphire substrate with an oxidized gate insulator

Kelson D. Chabak; Dennis E. Walker; Michael R. Johnson; Antonio Crespo; Amir M. Dabiran; David Smith; Andrew M. Wowchak; Stephen K. Tetlak; Mauricio Kossler; James K. Gillespie; Robert C. Fitch; Manuel Trejo

doi:10.1109/LED.2011.2167952

High-performance AlN/GaN HEMTs on sapphire substrate with an oxidized gate insulator

Kelson D. Chabak, Dennis E. Walker, Michael R. Johnson, Antonio Crespo, Amir M. Dabiran, David Smith, Andrew M. Wowchak, Stephen K. Tetlak, Mauricio Kossler, James K. Gillespie, Robert C. Fitch, Manuel Trejo

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35 Scopus citations

Abstract

This letter presents transistor device results on ultrathin AlN/GaN high-electron mobility transistors grown on a sapphire substrate with high dc/RF performance, including low gate leakage and high transconductance. Devices with 80- and 180-nm T-gates are compared, which demonstrate drain-induced off -state gate leakage currents below 10^-6 A/mm and extrinsic transconductance gm ∼ 500}\ mS/mm} by utilizing a ∼2-3 nm amorphous oxide layer formed under the T-gate during processing. In addition, excellent dc results such as RC < 0.50} mm} and pulsed I_DSmax ∼ 1.75}\ A/mm} are reported. Small-signal RF performance using an 80-nm T-gate achieved f_t>100 GHz} operation, which is among the best so far reported for AlN/GaN technology.

Original language	English (US)
Article number	6032708
Pages (from-to)	1677-1679
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	12
DOIs	https://doi.org/10.1109/LED.2011.2167952
State	Published - Dec 2011

Keywords

Aluminum nitride
High-electron-mobility transistor (HEMT)
Lattice strain
Low gate leakage
Sapphire substrate

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2011.2167952

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Chabak, K. D., Walker, D. E., Johnson, M. R., Crespo, A., Dabiran, A. M., Smith, D., Wowchak, A. M., Tetlak, S. K., Kossler, M., Gillespie, J. K., Fitch, R. C., & Trejo, M. (2011). High-performance AlN/GaN HEMTs on sapphire substrate with an oxidized gate insulator. IEEE Electron Device Letters, 32(12), 1677-1679. Article 6032708. https://doi.org/10.1109/LED.2011.2167952

@article{f73fca6ad6db4b42a90ea430d50aa217,

title = "High-performance AlN/GaN HEMTs on sapphire substrate with an oxidized gate insulator",

abstract = "This letter presents transistor device results on ultrathin AlN/GaN high-electron mobility transistors grown on a sapphire substrate with high dc/RF performance, including low gate leakage and high transconductance. Devices with 80- and 180-nm T-gates are compared, which demonstrate drain-induced off -state gate leakage currents below 10-6 A/mm and extrinsic transconductance gm ∼ 500}\ mS/mm} by utilizing a ∼2-3 nm amorphous oxide layer formed under the T-gate during processing. In addition, excellent dc results such as RC < 0.50} mm} and pulsed IDSmax ∼ 1.75}\ A/mm} are reported. Small-signal RF performance using an 80-nm T-gate achieved ft>100 GHz} operation, which is among the best so far reported for AlN/GaN technology.",

keywords = "Aluminum nitride, High-electron-mobility transistor (HEMT), Lattice strain, Low gate leakage, Sapphire substrate",

author = "Chabak, {Kelson D.} and Walker, {Dennis E.} and Johnson, {Michael R.} and Antonio Crespo and Dabiran, {Amir M.} and David Smith and Wowchak, {Andrew M.} and Tetlak, {Stephen K.} and Mauricio Kossler and Gillespie, {James K.} and Fitch, {Robert C.} and Manuel Trejo",

year = "2011",

month = dec,

doi = "10.1109/LED.2011.2167952",

language = "English (US)",

volume = "32",

pages = "1677--1679",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - High-performance AlN/GaN HEMTs on sapphire substrate with an oxidized gate insulator

AU - Chabak, Kelson D.

AU - Walker, Dennis E.

AU - Johnson, Michael R.

AU - Crespo, Antonio

AU - Dabiran, Amir M.

AU - Smith, David

AU - Wowchak, Andrew M.

AU - Tetlak, Stephen K.

AU - Kossler, Mauricio

AU - Gillespie, James K.

AU - Fitch, Robert C.

AU - Trejo, Manuel

PY - 2011/12

Y1 - 2011/12

N2 - This letter presents transistor device results on ultrathin AlN/GaN high-electron mobility transistors grown on a sapphire substrate with high dc/RF performance, including low gate leakage and high transconductance. Devices with 80- and 180-nm T-gates are compared, which demonstrate drain-induced off -state gate leakage currents below 10-6 A/mm and extrinsic transconductance gm ∼ 500}\ mS/mm} by utilizing a ∼2-3 nm amorphous oxide layer formed under the T-gate during processing. In addition, excellent dc results such as RC < 0.50} mm} and pulsed IDSmax ∼ 1.75}\ A/mm} are reported. Small-signal RF performance using an 80-nm T-gate achieved ft>100 GHz} operation, which is among the best so far reported for AlN/GaN technology.

AB - This letter presents transistor device results on ultrathin AlN/GaN high-electron mobility transistors grown on a sapphire substrate with high dc/RF performance, including low gate leakage and high transconductance. Devices with 80- and 180-nm T-gates are compared, which demonstrate drain-induced off -state gate leakage currents below 10-6 A/mm and extrinsic transconductance gm ∼ 500}\ mS/mm} by utilizing a ∼2-3 nm amorphous oxide layer formed under the T-gate during processing. In addition, excellent dc results such as RC < 0.50} mm} and pulsed IDSmax ∼ 1.75}\ A/mm} are reported. Small-signal RF performance using an 80-nm T-gate achieved ft>100 GHz} operation, which is among the best so far reported for AlN/GaN technology.

KW - Aluminum nitride

KW - High-electron-mobility transistor (HEMT)

KW - Lattice strain

KW - Low gate leakage

KW - Sapphire substrate

UR - http://www.scopus.com/inward/record.url?scp=81855185260&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=81855185260&partnerID=8YFLogxK

U2 - 10.1109/LED.2011.2167952

DO - 10.1109/LED.2011.2167952

M3 - Article

AN - SCOPUS:81855185260

SN - 0741-3106

VL - 32

SP - 1677

EP - 1679

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 12

M1 - 6032708

ER -

High-performance AlN/GaN HEMTs on sapphire substrate with an oxidized gate insulator

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Keywords

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