High optical power and low-efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier

Chih Chien Pan, Qimin Yan, Houqiang Fu, Yuji Zhao, Yuh Renn Wu, Chris Van De Walle, Shuji Nakamura, Steven P. Denbaars

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

A compositionally step-graded (CSG) InGaN barrier is designed for the active region of c-plane blue light-emitting diodes (LEDs). High external quantum efficiencies of 45, 42, 39 and 36% are achieved at current densities of 100, 200, 300 and 400 A/cm2, respectively. Compared with GaN barrier devices, LEDs with CSG InGaN barriers showed higher power, lower operating voltage and smaller wavelength blueshift, compared with GaN barrier LEDs. Owing to the low-voltage performance, higher wall-plug efficiency can be achieved for blue LEDs with CSG InGaN barriers.

Original languageEnglish (US)
Pages (from-to)1187-1189
Number of pages3
JournalElectronics Letters
Volume51
Issue number15
DOIs
StatePublished - Jul 23 2015
Externally publishedYes

Fingerprint

Light emitting diodes
Electric potential
Quantum efficiency
Current density
Wavelength

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

High optical power and low-efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier. / Pan, Chih Chien; Yan, Qimin; Fu, Houqiang; Zhao, Yuji; Wu, Yuh Renn; Van De Walle, Chris; Nakamura, Shuji; Denbaars, Steven P.

In: Electronics Letters, Vol. 51, No. 15, 23.07.2015, p. 1187-1189.

Research output: Contribution to journalArticle

Pan, Chih Chien ; Yan, Qimin ; Fu, Houqiang ; Zhao, Yuji ; Wu, Yuh Renn ; Van De Walle, Chris ; Nakamura, Shuji ; Denbaars, Steven P. / High optical power and low-efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier. In: Electronics Letters. 2015 ; Vol. 51, No. 15. pp. 1187-1189.
@article{a78120e295d54b759cc6f7b0ff62e431,
title = "High optical power and low-efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier",
abstract = "A compositionally step-graded (CSG) InGaN barrier is designed for the active region of c-plane blue light-emitting diodes (LEDs). High external quantum efficiencies of 45, 42, 39 and 36{\%} are achieved at current densities of 100, 200, 300 and 400 A/cm2, respectively. Compared with GaN barrier devices, LEDs with CSG InGaN barriers showed higher power, lower operating voltage and smaller wavelength blueshift, compared with GaN barrier LEDs. Owing to the low-voltage performance, higher wall-plug efficiency can be achieved for blue LEDs with CSG InGaN barriers.",
author = "Pan, {Chih Chien} and Qimin Yan and Houqiang Fu and Yuji Zhao and Wu, {Yuh Renn} and {Van De Walle}, Chris and Shuji Nakamura and Denbaars, {Steven P.}",
year = "2015",
month = "7",
day = "23",
doi = "10.1049/el.2015.1647",
language = "English (US)",
volume = "51",
pages = "1187--1189",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "15",

}

TY - JOUR

T1 - High optical power and low-efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier

AU - Pan, Chih Chien

AU - Yan, Qimin

AU - Fu, Houqiang

AU - Zhao, Yuji

AU - Wu, Yuh Renn

AU - Van De Walle, Chris

AU - Nakamura, Shuji

AU - Denbaars, Steven P.

PY - 2015/7/23

Y1 - 2015/7/23

N2 - A compositionally step-graded (CSG) InGaN barrier is designed for the active region of c-plane blue light-emitting diodes (LEDs). High external quantum efficiencies of 45, 42, 39 and 36% are achieved at current densities of 100, 200, 300 and 400 A/cm2, respectively. Compared with GaN barrier devices, LEDs with CSG InGaN barriers showed higher power, lower operating voltage and smaller wavelength blueshift, compared with GaN barrier LEDs. Owing to the low-voltage performance, higher wall-plug efficiency can be achieved for blue LEDs with CSG InGaN barriers.

AB - A compositionally step-graded (CSG) InGaN barrier is designed for the active region of c-plane blue light-emitting diodes (LEDs). High external quantum efficiencies of 45, 42, 39 and 36% are achieved at current densities of 100, 200, 300 and 400 A/cm2, respectively. Compared with GaN barrier devices, LEDs with CSG InGaN barriers showed higher power, lower operating voltage and smaller wavelength blueshift, compared with GaN barrier LEDs. Owing to the low-voltage performance, higher wall-plug efficiency can be achieved for blue LEDs with CSG InGaN barriers.

UR - http://www.scopus.com/inward/record.url?scp=84937597976&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84937597976&partnerID=8YFLogxK

U2 - 10.1049/el.2015.1647

DO - 10.1049/el.2015.1647

M3 - Article

VL - 51

SP - 1187

EP - 1189

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 15

ER -