High optical power and low-efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier

Chih Chien Pan; Qimin Yan; Houqiang Fu; Yuji Zhao; Yuh Renn Wu; Chris Van De Walle; Shuji Nakamura; Steven P. Denbaars

doi:10.1049/el.2015.1647

High optical power and low-efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier

Chih Chien Pan, Qimin Yan, Houqiang Fu, Yuji Zhao, Yuh Renn Wu, Chris Van De Walle, Shuji Nakamura, Steven P. Denbaars

Electrical, Computer, and Energy Engineering, School of (IAFSE-ECEE)

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

A compositionally step-graded (CSG) InGaN barrier is designed for the active region of c-plane blue light-emitting diodes (LEDs). High external quantum efficiencies of 45, 42, 39 and 36% are achieved at current densities of 100, 200, 300 and 400 A/cm², respectively. Compared with GaN barrier devices, LEDs with CSG InGaN barriers showed higher power, lower operating voltage and smaller wavelength blueshift, compared with GaN barrier LEDs. Owing to the low-voltage performance, higher wall-plug efficiency can be achieved for blue LEDs with CSG InGaN barriers.

Original language	English (US)
Pages (from-to)	1187-1189
Number of pages	3
Journal	Electronics Letters
Volume	51
Issue number	15
DOIs	https://doi.org/10.1049/el.2015.1647
State	Published - Jul 23 2015

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el.2015.1647

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title = "High optical power and low-efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier",

abstract = "A compositionally step-graded (CSG) InGaN barrier is designed for the active region of c-plane blue light-emitting diodes (LEDs). High external quantum efficiencies of 45, 42, 39 and 36% are achieved at current densities of 100, 200, 300 and 400 A/cm2, respectively. Compared with GaN barrier devices, LEDs with CSG InGaN barriers showed higher power, lower operating voltage and smaller wavelength blueshift, compared with GaN barrier LEDs. Owing to the low-voltage performance, higher wall-plug efficiency can be achieved for blue LEDs with CSG InGaN barriers.",

author = "Pan, {Chih Chien} and Qimin Yan and Houqiang Fu and Yuji Zhao and Wu, {Yuh Renn} and {Van De Walle}, Chris and Shuji Nakamura and Denbaars, {Steven P.}",

note = "Publisher Copyright: {\textcopyright} The Institution of Engineering and Technology 2015.",

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doi = "10.1049/el.2015.1647",

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T1 - High optical power and low-efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier

AU - Pan, Chih Chien

AU - Yan, Qimin

AU - Fu, Houqiang

AU - Zhao, Yuji

AU - Wu, Yuh Renn

AU - Van De Walle, Chris

AU - Nakamura, Shuji

AU - Denbaars, Steven P.

PY - 2015/7/23

Y1 - 2015/7/23

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AB - A compositionally step-graded (CSG) InGaN barrier is designed for the active region of c-plane blue light-emitting diodes (LEDs). High external quantum efficiencies of 45, 42, 39 and 36% are achieved at current densities of 100, 200, 300 and 400 A/cm2, respectively. Compared with GaN barrier devices, LEDs with CSG InGaN barriers showed higher power, lower operating voltage and smaller wavelength blueshift, compared with GaN barrier LEDs. Owing to the low-voltage performance, higher wall-plug efficiency can be achieved for blue LEDs with CSG InGaN barriers.

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High optical power and low-efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier

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