High-mobility InAs/AlSb heterostructures for spintronics applications

Yu G. Sadofyev; Yu Cao; S. Chaparro; A. Ramamoorthy; B. Naser; J. P. Bird; Shane Johnson; Yong-Hang Zhang

doi:10.1117/12.510557

High-mobility InAs/AlSb heterostructures for spintronics applications

Yu G. Sadofyev, Yu Cao, S. Chaparro, A. Ramamoorthy, B. Naser, J. P. Bird, Shane Johnson, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

High-mobility InAs single quantum well with symmetrical AlSb and asymmetrical Al and Al _0.8Ga _0.2Sb barriers were grown on GaAs (100) by MBE. Magneto-transport studies revealed enhancement of sufficient effective g-factor in a quantizing magnetic field. This enhancement is quite sensitive to the layer composition of the epitaxially-grown structures. The implications of these results for the implementation of InAs-based spintronics structures are discussed.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	Z.I. Alferov, L. Esaki
Pages	49-51
Number of pages	3
Volume	5023
DOIs	https://doi.org/10.1117/12.510557
State	Published - 2003
Event	10th International Symposium on Nanostructures: Physics and Technology - St. Petersburg, Russian Federation Duration: Jun 17 2002 → Jun 21 2002

Other

Other	10th International Symposium on Nanostructures: Physics and Technology
Country/Territory	Russian Federation
City	St. Petersburg
Period	6/17/02 → 6/21/02

Keywords

g-factor enhancement
High mobility
InAs/AlSb
Quantum well
Spintronics

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

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10.1117/12.510557

Cite this

Sadofyev, YG, Cao, Y, Chaparro, S, Ramamoorthy, A, Naser, B, Bird, JP, Johnson, S & Zhang, Y-H 2003, High-mobility InAs/AlSb heterostructures for spintronics applications. in ZI Alferov & L Esaki (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 5023, pp. 49-51, 10th International Symposium on Nanostructures: Physics and Technology, St. Petersburg, Russian Federation, 6/17/02. https://doi.org/10.1117/12.510557

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title = "High-mobility InAs/AlSb heterostructures for spintronics applications",

abstract = "High-mobility InAs single quantum well with symmetrical AlSb and asymmetrical Al and Al 0.8Ga 0.2Sb barriers were grown on GaAs (100) by MBE. Magneto-transport studies revealed enhancement of sufficient effective g-factor in a quantizing magnetic field. This enhancement is quite sensitive to the layer composition of the epitaxially-grown structures. The implications of these results for the implementation of InAs-based spintronics structures are discussed. ",

keywords = "g-factor enhancement, High mobility, InAs/AlSb, Quantum well, Spintronics",

author = "Sadofyev, {Yu G.} and Yu Cao and S. Chaparro and A. Ramamoorthy and B. Naser and Bird, {J. P.} and Shane Johnson and Yong-Hang Zhang",

year = "2003",

doi = "10.1117/12.510557",

language = "English (US)",

volume = "5023",

pages = "49--51",

editor = "Z.I. Alferov and L. Esaki",

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T1 - High-mobility InAs/AlSb heterostructures for spintronics applications

AU - Sadofyev, Yu G.

AU - Cao, Yu

AU - Chaparro, S.

AU - Ramamoorthy, A.

AU - Naser, B.

AU - Bird, J. P.

AU - Johnson, Shane

AU - Zhang, Yong-Hang

PY - 2003

Y1 - 2003

N2 - High-mobility InAs single quantum well with symmetrical AlSb and asymmetrical Al and Al 0.8Ga 0.2Sb barriers were grown on GaAs (100) by MBE. Magneto-transport studies revealed enhancement of sufficient effective g-factor in a quantizing magnetic field. This enhancement is quite sensitive to the layer composition of the epitaxially-grown structures. The implications of these results for the implementation of InAs-based spintronics structures are discussed.

AB - High-mobility InAs single quantum well with symmetrical AlSb and asymmetrical Al and Al 0.8Ga 0.2Sb barriers were grown on GaAs (100) by MBE. Magneto-transport studies revealed enhancement of sufficient effective g-factor in a quantizing magnetic field. This enhancement is quite sensitive to the layer composition of the epitaxially-grown structures. The implications of these results for the implementation of InAs-based spintronics structures are discussed.

KW - g-factor enhancement

KW - High mobility

KW - InAs/AlSb

KW - Quantum well

KW - Spintronics

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U2 - 10.1117/12.510557

DO - 10.1117/12.510557

M3 - Conference contribution

AN - SCOPUS:0042878664

VL - 5023

SP - 49

EP - 51

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Alferov, Z.I.

A2 - Esaki, L.

T2 - 10th International Symposium on Nanostructures: Physics and Technology

Y2 - 17 June 2002 through 21 June 2002

ER -

High-mobility InAs/AlSb heterostructures for spintronics applications

Abstract

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Keywords

ASJC Scopus subject areas

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