High-mobility InAs/AlSb heterostructures for spintronics applications

Yu G. Sadofyev, Yu Cao, S. Chaparro, A. Ramamoorthy, B. Naser, J. P. Bird, Shane Johnson, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution


High-mobility InAs single quantum well with symmetrical AlSb and asymmetrical Al and Al 0.8Ga 0.2Sb barriers were grown on GaAs (100) by MBE. Magneto-transport studies revealed enhancement of sufficient effective g-factor in a quantizing magnetic field. This enhancement is quite sensitive to the layer composition of the epitaxially-grown structures. The implications of these results for the implementation of InAs-based spintronics structures are discussed.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsZ.I. Alferov, L. Esaki
Number of pages3
StatePublished - 2003
Event10th International Symposium on Nanostructures: Physics and Technology - St. Petersburg, Russian Federation
Duration: Jun 17 2002Jun 21 2002


Other10th International Symposium on Nanostructures: Physics and Technology
Country/TerritoryRussian Federation
CitySt. Petersburg


  • g-factor enhancement
  • High mobility
  • InAs/AlSb
  • Quantum well
  • Spintronics

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics


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