High-mobility InAs/AlSb heterostructures for spintronics applications

Yu G. Sadofyev, Yu Cao, S. Chaparro, A. Ramamoorthy, B. Naser, J. P. Bird, Shane Johnson, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High-mobility InAs single quantum well with symmetrical AlSb and asymmetrical Al and Al 0.8Ga 0.2Sb barriers were grown on GaAs (100) by MBE. Magneto-transport studies revealed enhancement of sufficient effective g-factor in a quantizing magnetic field. This enhancement is quite sensitive to the layer composition of the epitaxially-grown structures. The implications of these results for the implementation of InAs-based spintronics structures are discussed.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsZ.I. Alferov, L. Esaki
Pages49-51
Number of pages3
Volume5023
DOIs
StatePublished - 2003
Event10th International Symposium on Nanostructures: Physics and Technology - St. Petersburg, Russian Federation
Duration: Jun 17 2002Jun 21 2002

Other

Other10th International Symposium on Nanostructures: Physics and Technology
CountryRussian Federation
CitySt. Petersburg
Period6/17/026/21/02

Fingerprint

Magnetoelectronics
Molecular beam epitaxy
Semiconductor quantum wells
Heterojunctions
Magnetic fields
augmentation
Chemical analysis
quantum wells
magnetic fields

Keywords

  • g-factor enhancement
  • High mobility
  • InAs/AlSb
  • Quantum well
  • Spintronics

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Sadofyev, Y. G., Cao, Y., Chaparro, S., Ramamoorthy, A., Naser, B., Bird, J. P., ... Zhang, Y-H. (2003). High-mobility InAs/AlSb heterostructures for spintronics applications. In Z. I. Alferov, & L. Esaki (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 5023, pp. 49-51) https://doi.org/10.1117/12.510557

High-mobility InAs/AlSb heterostructures for spintronics applications. / Sadofyev, Yu G.; Cao, Yu; Chaparro, S.; Ramamoorthy, A.; Naser, B.; Bird, J. P.; Johnson, Shane; Zhang, Yong-Hang.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / Z.I. Alferov; L. Esaki. Vol. 5023 2003. p. 49-51.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sadofyev, YG, Cao, Y, Chaparro, S, Ramamoorthy, A, Naser, B, Bird, JP, Johnson, S & Zhang, Y-H 2003, High-mobility InAs/AlSb heterostructures for spintronics applications. in ZI Alferov & L Esaki (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 5023, pp. 49-51, 10th International Symposium on Nanostructures: Physics and Technology, St. Petersburg, Russian Federation, 6/17/02. https://doi.org/10.1117/12.510557
Sadofyev YG, Cao Y, Chaparro S, Ramamoorthy A, Naser B, Bird JP et al. High-mobility InAs/AlSb heterostructures for spintronics applications. In Alferov ZI, Esaki L, editors, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 5023. 2003. p. 49-51 https://doi.org/10.1117/12.510557
Sadofyev, Yu G. ; Cao, Yu ; Chaparro, S. ; Ramamoorthy, A. ; Naser, B. ; Bird, J. P. ; Johnson, Shane ; Zhang, Yong-Hang. / High-mobility InAs/AlSb heterostructures for spintronics applications. Proceedings of SPIE - The International Society for Optical Engineering. editor / Z.I. Alferov ; L. Esaki. Vol. 5023 2003. pp. 49-51
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