High-mobility InAs/AlSb heterostructures for spintronics applications

Yu G. Sadofyev, Yu Cao, S. Chaparro, A. Ramamoorthy, B. Naser, J. P. Bird, Shane Johnson, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High-mobility InAs single quantum well with symmetrical AlSb and asymmetrical Al and Al 0.8Ga 0.2Sb barriers were grown on GaAs (100) by MBE. Magneto-transport studies revealed enhancement of sufficient effective g-factor in a quantizing magnetic field. This enhancement is quite sensitive to the layer composition of the epitaxially-grown structures. The implications of these results for the implementation of InAs-based spintronics structures are discussed.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsZ.I. Alferov, L. Esaki
Pages49-51
Number of pages3
Volume5023
DOIs
StatePublished - 2003
Event10th International Symposium on Nanostructures: Physics and Technology - St. Petersburg, Russian Federation
Duration: Jun 17 2002Jun 21 2002

Other

Other10th International Symposium on Nanostructures: Physics and Technology
CountryRussian Federation
CitySt. Petersburg
Period6/17/026/21/02

Keywords

  • g-factor enhancement
  • High mobility
  • InAs/AlSb
  • Quantum well
  • Spintronics

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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  • Cite this

    Sadofyev, Y. G., Cao, Y., Chaparro, S., Ramamoorthy, A., Naser, B., Bird, J. P., Johnson, S., & Zhang, Y-H. (2003). High-mobility InAs/AlSb heterostructures for spintronics applications. In Z. I. Alferov, & L. Esaki (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 5023, pp. 49-51) https://doi.org/10.1117/12.510557