High ionizing dose effects on ultra thin SiO 2/Si structures revealed by Conductive Atomic Force Microscopy

R. Arinero, A. D. Touboul, M. Ramonda, C. Guasch, Y. Gonzalez-Velo, J. Boch, F. Saigné

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The electrical stress behavior of high total ionizing dose irradiated ultra-thin SiO 2/Si structures is investigated using Conductive-AFM. It is shown evidence, for the first time, of threshold voltage shift effects with nanometer spatial resolutions.

Original languageEnglish (US)
Title of host publicationRADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings
Pages47-50
Number of pages4
DOIs
StatePublished - Dec 1 2011
Event12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011 - Sevilla, Spain
Duration: Sep 19 2011Sep 23 2011

Publication series

NameProceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Other

Other12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011
CountrySpain
CitySevilla
Period9/19/119/23/11

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Keywords

  • Conductive-AFM (C-AFM)
  • Ramp Voltage Stress
  • SiO -Si structures
  • Weibull statistic
  • nano I-V curves
  • oxide reliability
  • ultra-thin oxide films

ASJC Scopus subject areas

  • Radiation
  • Electrical and Electronic Engineering

Cite this

Arinero, R., Touboul, A. D., Ramonda, M., Guasch, C., Gonzalez-Velo, Y., Boch, J., & Saigné, F. (2011). High ionizing dose effects on ultra thin SiO 2/Si structures revealed by Conductive Atomic Force Microscopy. In RADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings (pp. 47-50). [6131383] (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS). https://doi.org/10.1109/RADECS.2011.6131383