High ionizing dose effects on ultra thin SiO 2/Si structures revealed by Conductive Atomic Force Microscopy

R. Arinero; A. D. Touboul; M. Ramonda; C. Guasch; Y. Gonzalez-Velo; J. Boch; F. Saigné

doi:10.1109/RADECS.2011.6131383

High ionizing dose effects on ultra thin SiO ₂/Si structures revealed by Conductive Atomic Force Microscopy

R. Arinero, A. D. Touboul, M. Ramonda, C. Guasch, Y. Gonzalez-Velo, J. Boch, F. Saigné

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The electrical stress behavior of high total ionizing dose irradiated ultra-thin SiO ₂/Si structures is investigated using Conductive-AFM. It is shown evidence, for the first time, of threshold voltage shift effects with nanometer spatial resolutions.

Original language	English (US)
Title of host publication	RADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings
Pages	47-50
Number of pages	4
DOIs	https://doi.org/10.1109/RADECS.2011.6131383
State	Published - 2011
Externally published	Yes
Event	12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011 - Sevilla, Spain Duration: Sep 19 2011 → Sep 23 2011

Publication series

Name	Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Other

Other	12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011
Country/Territory	Spain
City	Sevilla
Period	9/19/11 → 9/23/11

Keywords

Conductive-AFM (C-AFM)
Ramp Voltage Stress
SiO -Si structures
Weibull statistic
nano I-V curves
oxide reliability
ultra-thin oxide films

ASJC Scopus subject areas

Radiation
Electrical and Electronic Engineering

Access to Document

10.1109/RADECS.2011.6131383

Cite this

Arinero, R., Touboul, A. D., Ramonda, M., Guasch, C., Gonzalez-Velo, Y., Boch, J., & Saigné, F. (2011). High ionizing dose effects on ultra thin SiO ₂/Si structures revealed by Conductive Atomic Force Microscopy. In RADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings (pp. 47-50). Article 6131383 (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS). https://doi.org/10.1109/RADECS.2011.6131383

High ionizing dose effects on ultra thin SiO ₂/Si structures revealed by Conductive Atomic Force Microscopy. / Arinero, R.; Touboul, A. D.; Ramonda, M. et al.
RADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings. 2011. p. 47-50 6131383 (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Arinero, R, Touboul, AD, Ramonda, M, Guasch, C, Gonzalez-Velo, Y, Boch, J & Saigné, F 2011, High ionizing dose effects on ultra thin SiO ₂/Si structures revealed by Conductive Atomic Force Microscopy. in RADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings., 6131383, Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS, pp. 47-50, 12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011, Sevilla, Spain, 9/19/11. https://doi.org/10.1109/RADECS.2011.6131383

Arinero R, Touboul AD, Ramonda M, Guasch C, Gonzalez-Velo Y, Boch J et al. High ionizing dose effects on ultra thin SiO ₂/Si structures revealed by Conductive Atomic Force Microscopy. In RADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings. 2011. p. 47-50. 6131383. (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS). doi: 10.1109/RADECS.2011.6131383

Arinero, R. ; Touboul, A. D. ; Ramonda, M. et al. / High ionizing dose effects on ultra thin SiO ₂/Si structures revealed by Conductive Atomic Force Microscopy. RADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings. 2011. pp. 47-50 (Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS).

@inproceedings{0ddf10ca24554a19b1471b10c6b8cd0a,

title = "High ionizing dose effects on ultra thin SiO 2/Si structures revealed by Conductive Atomic Force Microscopy",

abstract = "The electrical stress behavior of high total ionizing dose irradiated ultra-thin SiO 2/Si structures is investigated using Conductive-AFM. It is shown evidence, for the first time, of threshold voltage shift effects with nanometer spatial resolutions.",

keywords = "Conductive-AFM (C-AFM), Ramp Voltage Stress, SiO -Si structures, Weibull statistic, nano I-V curves, oxide reliability, ultra-thin oxide films",

author = "R. Arinero and Touboul, {A. D.} and M. Ramonda and C. Guasch and Y. Gonzalez-Velo and J. Boch and F. Saign{\'e}",

year = "2011",

doi = "10.1109/RADECS.2011.6131383",

language = "English (US)",

isbn = "9781457705878",

series = "Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS",

pages = "47--50",

booktitle = "RADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings",

note = "12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011 ; Conference date: 19-09-2011 Through 23-09-2011",

}

TY - GEN

T1 - High ionizing dose effects on ultra thin SiO 2/Si structures revealed by Conductive Atomic Force Microscopy

AU - Arinero, R.

AU - Touboul, A. D.

AU - Ramonda, M.

AU - Guasch, C.

AU - Gonzalez-Velo, Y.

AU - Boch, J.

AU - Saigné, F.

PY - 2011

Y1 - 2011

N2 - The electrical stress behavior of high total ionizing dose irradiated ultra-thin SiO 2/Si structures is investigated using Conductive-AFM. It is shown evidence, for the first time, of threshold voltage shift effects with nanometer spatial resolutions.

AB - The electrical stress behavior of high total ionizing dose irradiated ultra-thin SiO 2/Si structures is investigated using Conductive-AFM. It is shown evidence, for the first time, of threshold voltage shift effects with nanometer spatial resolutions.

KW - Conductive-AFM (C-AFM)

KW - Ramp Voltage Stress

KW - SiO -Si structures

KW - Weibull statistic

KW - nano I-V curves

KW - oxide reliability

KW - ultra-thin oxide films

UR - http://www.scopus.com/inward/record.url?scp=84860190694&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84860190694&partnerID=8YFLogxK

U2 - 10.1109/RADECS.2011.6131383

DO - 10.1109/RADECS.2011.6131383

M3 - Conference contribution

AN - SCOPUS:84860190694

SN - 9781457705878

T3 - Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

SP - 47

EP - 50

BT - RADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings

T2 - 12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011

Y2 - 19 September 2011 through 23 September 2011

ER -