High ionizing dose effects on ultra thin SiO 2/Si structures revealed by Conductive Atomic Force Microscopy

R. Arinero, A. D. Touboul, M. Ramonda, C. Guasch, Yago Gonzalez Velo, J. Boch, F. Saigné

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The electrical stress behavior of high total ionizing dose irradiated ultra-thin SiO 2/Si structures is investigated using Conductive-AFM. It is shown evidence, for the first time, of threshold voltage shift effects with nanometer spatial resolutions.

Original languageEnglish (US)
Title of host publicationRADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings
Pages47-50
Number of pages4
DOIs
StatePublished - Dec 1 2011
Externally publishedYes
Event12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011 - Sevilla, Spain
Duration: Sep 19 2011Sep 23 2011

Other

Other12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011
CountrySpain
CitySevilla
Period9/19/119/23/11

Fingerprint

Threshold voltage
threshold voltage
Atomic force microscopy
spatial resolution
atomic force microscopy
dosage
shift

Keywords

  • Conductive-AFM (C-AFM)
  • nano I-V curves
  • oxide reliability
  • Ramp Voltage Stress
  • SiO -Si structures
  • ultra-thin oxide films
  • Weibull statistic

ASJC Scopus subject areas

  • Radiation
  • Electrical and Electronic Engineering

Cite this

Arinero, R., Touboul, A. D., Ramonda, M., Guasch, C., Gonzalez Velo, Y., Boch, J., & Saigné, F. (2011). High ionizing dose effects on ultra thin SiO 2/Si structures revealed by Conductive Atomic Force Microscopy. In RADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings (pp. 47-50). [6131383] https://doi.org/10.1109/RADECS.2011.6131383

High ionizing dose effects on ultra thin SiO 2/Si structures revealed by Conductive Atomic Force Microscopy. / Arinero, R.; Touboul, A. D.; Ramonda, M.; Guasch, C.; Gonzalez Velo, Yago; Boch, J.; Saigné, F.

RADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings. 2011. p. 47-50 6131383.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Arinero, R, Touboul, AD, Ramonda, M, Guasch, C, Gonzalez Velo, Y, Boch, J & Saigné, F 2011, High ionizing dose effects on ultra thin SiO 2/Si structures revealed by Conductive Atomic Force Microscopy. in RADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings., 6131383, pp. 47-50, 12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011, Sevilla, Spain, 9/19/11. https://doi.org/10.1109/RADECS.2011.6131383
Arinero R, Touboul AD, Ramonda M, Guasch C, Gonzalez Velo Y, Boch J et al. High ionizing dose effects on ultra thin SiO 2/Si structures revealed by Conductive Atomic Force Microscopy. In RADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings. 2011. p. 47-50. 6131383 https://doi.org/10.1109/RADECS.2011.6131383
Arinero, R. ; Touboul, A. D. ; Ramonda, M. ; Guasch, C. ; Gonzalez Velo, Yago ; Boch, J. ; Saigné, F. / High ionizing dose effects on ultra thin SiO 2/Si structures revealed by Conductive Atomic Force Microscopy. RADECS 2011 - 12th European Conference on Radiation and Its Effects on Component and Systems, Conference Proceedings. 2011. pp. 47-50
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