High growth speed of gallium nitride using ENABLE-MBE

J. J. Williams, A. M. Fischer, T. L. Williamson, S. Gangam, N. N. Faleev, M. A. Hoffbauer, Christiana Honsberg

Research output: Contribution to journalArticle

Abstract

Films of gallium nitride were grown at varying growth speeds, while all other major variables were held constant. Films grown determine the material impact of the high flux capabilities of the unique nitrogen plasma source ENABLE. Growth rates ranged from 13 to near 60 nm/min. X-ray ω scans of GaN (0002) have FWHM in all samples less than 300 arc sec. Cathodoluminescence shows radiative recombination for all samples at the band edge. In general material quality overall is high with slight degradation as growth speeds increase to higher rates.

Original languageEnglish (US)
Pages (from-to)129-132
Number of pages4
JournalJournal of Crystal Growth
Volume425
DOIs
Publication statusPublished - Jul 28 2015

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Keywords

  • A1. Cathodoluminescence
  • A1. High resolution X-ray diffraction
  • A3. Molecular beam epitaxy
  • B1. Gallium compounds
  • B1. Nitrides

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Williams, J. J., Fischer, A. M., Williamson, T. L., Gangam, S., Faleev, N. N., Hoffbauer, M. A., & Honsberg, C. (2015). High growth speed of gallium nitride using ENABLE-MBE. Journal of Crystal Growth, 425, 129-132. https://doi.org/10.1016/j.jcrysgro.2015.04.007