@article{5d165d38b7d043ac8b7ce939c606fb58,
title = "High growth speed of gallium nitride using ENABLE-MBE",
abstract = "Films of gallium nitride were grown at varying growth speeds, while all other major variables were held constant. Films grown determine the material impact of the high flux capabilities of the unique nitrogen plasma source ENABLE. Growth rates ranged from 13 to near 60 nm/min. X-ray ω scans of GaN (0002) have FWHM in all samples less than 300 arc sec. Cathodoluminescence shows radiative recombination for all samples at the band edge. In general material quality overall is high with slight degradation as growth speeds increase to higher rates.",
keywords = "A1. Cathodoluminescence, A1. High resolution X-ray diffraction, A3. Molecular beam epitaxy, B1. Gallium compounds, B1. Nitrides",
author = "Williams, {J. J.} and Fischer, {A. M.} and Williamson, {T. L.} and S. Gangam and Faleev, {N. N.} and Hoffbauer, {M. A.} and Christiana Honsberg",
note = "Funding Information: This material is based upon work primarily supported by the Engineering Research Center Program of the National Science Foundation and the Office of Energy Efficiency and Renewable Energy of the Department of Energy under NSF Cooperative Agreement No. EEC‐1041895 . Any opinions, findings and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect those of the National Science Foundation or Department of Energy. We gratefully acknowledge the use of facilities within the LeRoy Eyring Center for Solid State Science at Arizona State University. Publisher Copyright: {\textcopyright} 2015 Published by Elsevier.V.",
year = "2015",
month = jul,
day = "28",
doi = "10.1016/j.jcrysgro.2015.04.007",
language = "English (US)",
volume = "425",
pages = "129--132",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
}