AlGaAs/GaAs heterojunction bipolar transistors (HBT's) with graded band-gap bases were fabricated from computer-controlled molecular beam epitaxy layers. It was found that the use of an undoped setback layer of 200-500 Å to offset Be diffusion in the emitter resulted in significant current gain increases. Maximum current gains of 1150 for a base width of 0.18 μm were obtained which are the highest yet reported for graded base HBT's. Zn diffusion was used to contact the base and provides a low base contact resistance. Microwave s-parameter measurements yielded fT=5 GHz and f max=2.5 GHz. Large signal pulse measurements resulted in rise times of τr∼150 ps and pulsed collector currents of I c>100 mA which is useful for high current laser drivers.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - 1985|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)