Abstract
AlGaAs/GaAs heterojunction bipolar transistors (HBT's) with graded band-gap bases were fabricated from computer-controlled molecular beam epitaxy layers. It was found that the use of an undoped setback layer of 200-500 Å to offset Be diffusion in the emitter resulted in significant current gain increases. Maximum current gains of 1150 for a base width of 0.18 μm were obtained which are the highest yet reported for graded base HBT's. Zn diffusion was used to contact the base and provides a low base contact resistance. Microwave s-parameter measurements yielded fT=5 GHz and f max=2.5 GHz. Large signal pulse measurements resulted in rise times of τr∼150 ps and pulsed collector currents of I c>100 mA which is useful for high current laser drivers.
Original language | English (US) |
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Pages (from-to) | 600-602 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 46 |
Issue number | 6 |
DOIs | |
State | Published - 1985 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)