High Frequency Radiation Producing Semiconductor Devices

David Ferry (Inventor)

Research output: Patent

Abstract

Researchers at Arizona state University have developed a semiconductor device, termed the "Bloch-HEMT" that exploits the phenomenon of Bloch oscillations to produce extremely high frequencies of radiation, up to the infrared region. This could lead to entire circuits operating at higher frequencies than ever before possible and could impact the state-of- the-art in communications.The inventors have fabricated and tested prototype devices according to this invention. In fact, devices have been tested at temperatures as low as 4.2 degrees Kelvin. The devices are capable of delivering a gate controlled negative differential conductivity. They will also provide both a detector and a source for far infra-red radiation.For more detailed information on this innovation, please refer to US Patent No. 4,872,038
Original languageEnglish (US)
StatePublished - Jan 1 1900

Fingerprint

semiconductor devices
radiation
far infrared radiation
inventions
patents
extremely high frequencies
high electron mobility transistors
communication
prototypes
conductivity
oscillations
detectors
temperature

Cite this

High Frequency Radiation Producing Semiconductor Devices. / Ferry, David (Inventor).

Research output: Patent

@misc{7fd1da6a0bfa4c61850a9aa56604d763,
title = "High Frequency Radiation Producing Semiconductor Devices",
abstract = "Researchers at Arizona state University have developed a semiconductor device, termed the {"}Bloch-HEMT{"} that exploits the phenomenon of Bloch oscillations to produce extremely high frequencies of radiation, up to the infrared region. This could lead to entire circuits operating at higher frequencies than ever before possible and could impact the state-of- the-art in communications.The inventors have fabricated and tested prototype devices according to this invention. In fact, devices have been tested at temperatures as low as 4.2 degrees Kelvin. The devices are capable of delivering a gate controlled negative differential conductivity. They will also provide both a detector and a source for far infra-red radiation.For more detailed information on this innovation, please refer to US Patent No. 4,872,038",
author = "David Ferry",
year = "1900",
month = "1",
day = "1",
language = "English (US)",
type = "Patent",

}

TY - PAT

T1 - High Frequency Radiation Producing Semiconductor Devices

AU - Ferry, David

PY - 1900/1/1

Y1 - 1900/1/1

N2 - Researchers at Arizona state University have developed a semiconductor device, termed the "Bloch-HEMT" that exploits the phenomenon of Bloch oscillations to produce extremely high frequencies of radiation, up to the infrared region. This could lead to entire circuits operating at higher frequencies than ever before possible and could impact the state-of- the-art in communications.The inventors have fabricated and tested prototype devices according to this invention. In fact, devices have been tested at temperatures as low as 4.2 degrees Kelvin. The devices are capable of delivering a gate controlled negative differential conductivity. They will also provide both a detector and a source for far infra-red radiation.For more detailed information on this innovation, please refer to US Patent No. 4,872,038

AB - Researchers at Arizona state University have developed a semiconductor device, termed the "Bloch-HEMT" that exploits the phenomenon of Bloch oscillations to produce extremely high frequencies of radiation, up to the infrared region. This could lead to entire circuits operating at higher frequencies than ever before possible and could impact the state-of- the-art in communications.The inventors have fabricated and tested prototype devices according to this invention. In fact, devices have been tested at temperatures as low as 4.2 degrees Kelvin. The devices are capable of delivering a gate controlled negative differential conductivity. They will also provide both a detector and a source for far infra-red radiation.For more detailed information on this innovation, please refer to US Patent No. 4,872,038

M3 - Patent

ER -