High-frequency performance of subthreshold SOI MESFETs

Jinman Yang, John Spann, Robert Anderson, Trevor Thornton

Research output: Contribution to journalArticle

19 Scopus citations

Abstract

Results from silicon-on-insulator (SOI) MESFETs designed for subthreshold operation are presented. The transistors have subthreshold slopes as low as 78 mV/dec and off-state drain currents approaching 1 pA/ μm. Drain current saturation can be achieved with drain voltages of less than 0.5 V and with output impedance> 100 MΩ · μm. The cutoff frequency of a 500-nm gate length device exceeds 1 GHz at currents significantly less than 1 μA/ μm. These results suggest that subthreshold SOI MESFETs might have useful applications in mixed-signal, micropower circuit design.

Original languageEnglish (US)
Pages (from-to)652-654
Number of pages3
JournalIEEE Electron Device Letters
Volume25
Issue number9
DOIs
StatePublished - Sep 1 2004

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'High-frequency performance of subthreshold SOI MESFETs'. Together they form a unique fingerprint.

  • Cite this